- 更多网络例句与本征半导体相关的网络例句 [注：此内容来源于网络，仅供参考]
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The optically active defect centers of such types as E', two kinds of oxygen-deficiency and some kinds of oxygen-richness in silica play an important role in optical communication fiber and UV absorption. The researches on some oxygen-deficient defects and the metal ions doped or implanted semiconductor nanoparticles with fine luminescence properties have made it possible for silica to be used in the lighting field.
氧化硅材料本征E'、2种缺氧型以及各种富氧型光活性缺陷中心在光导纤维及紫外吸收等应用中扮演了很重要的作用，某些具有良好发光性能的缺氧中心及掺杂离子或半导体纳米粒子发光中心的深入研究使氧化硅材料在照明领域具有良好的应用前景。
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The method used to analyze the noise of electrical amplifier is applied to analyze the intrinsic noise of semiconductor laser diode.
本文将电子放大器的噪声分析方法用于半导体激光二极管的本征噪声分析中，在R.S。
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There is no obvious relation between temperature and semiconductor intrinsic properties. The passivation film represents the n-semiconductor characteristic in the potential interval of -0.5~0.1V, the p-semiconductor characteristic in the potential interval of 0.1~0.9V, and the n-semiconductor characteristic in the potential interval of
温度对于316L不锈钢钝化膜的半导体本征性质没有根本的影响：在-0.5~0.1V电位区间内钝化膜呈p型半导体特征；在0.1~0.9V电位区间内钝化膜呈n型半导体特征；在0.9~1.1V电位区间内钝化膜呈p型半导体特征。
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Based on the project requirements, the research has focused on the confined electronic states in the semiconductor surface quantum wells. The moden quantum theory and advanced material growth technology have been used. The interband transitions in the surface quantum well have been studied by the in-situ photo-modulated reflection spectroscopy combined with the molecular beam epitaxy system. The optical transitions, including the tansition between ground or excited states of the electron and hole states, have been directly observed.
根据项目任务书的要求，本项研究在现代量子理论与先进材料生长技术基础上对半导体表面量子阱阱结构中的受限电子能态进行系统的光谱实验与理论研究，通过与分子束外延设备直接耦合的光调制光谱手段在原子层量级上直接观测到了表面量子阱中本征能态间的光跃迁特性，其中包括基态间的跃迁和激发态间的跃迁。
- 更多网络解释与本征半导体相关的网络解释 [注：此内容来源于网络，仅供参考]
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drift velocity：漂移速率
spontaneous polarization 自发极化 | drift velocity 漂移速率 | intrinsic semiconductor 本征半导体
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Extrinsic semiconductor：杂质半导体
杂质半导体(extrinsic semiconductor) 半导体中的杂质对电导率的影响非常大,本征半导体经过掺杂就形成杂质半导体,一般可分为n型半导体和p型半导体. 半导体中掺入微量杂质时,杂质原子附近的周期势场受到干扰并形成附加的束缚状态,在禁带中产生附加的杂质能级.
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Extrinsic semiconductor：非本征半导体
710 、 非反相放大器 non-inverting amplifier | 711 、 非本征半导体 extrinsic semiconductor | 712 、 非破坏性试验 non-destructive testing
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extrinsic：非本征的
Extrapolation 外推法 | Extrinsic 非本征的 | Extrinsic semiconductor 杂质半导体
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semiconductor integrated circuit：半导体集成电路=>半導体集積回路
semiconductor injection laser 半导体注入式激光器 | semiconductor integrated circuit 半导体集成电路=>半導体集積回路 | semiconductor intrinsic properties 半导体的本征性质
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intrinsic semiconductor：本征半导体
顾名思义:导电性能介于导体与绝缘体(insulator)之间的材料,叫做半导体(semiconductor).本征半导体(intrinsic semiconductor) 没有掺杂且无晶格缺陷的纯净半导体称为本征半导体在绝对零度温度下,半导体的价带(valence band)是满带(见能带理论),
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intrinsic semiconductor：纯半导体,本征半导体
interval 间隔 | intrinsic semiconductor 纯半导体,本征半导体 | inverse-square law 平方反比定律
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semiconductor intrinsic properties：半导体的本征性质
semiconductor integrated circuit 半导体集成电路=>半導体集積回路 | semiconductor intrinsic properties 半导体的本征性质 | semiconductor ionics 半导体离子学
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semiconductor intrinsic properties：半导体的本征特性
semi-conductor integrated circuit 半导体集成电路 SCIC | semiconductor intrinsic properties 半导体的本征特性 | semiconductor junction 半导体结
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本征半导体 Inverse operation 反向工作：Intrinsic semiconductor
Intrinsic 本征的 | Intrinsic semiconductor 本征半导体 Inverse operation 反向工作 | Inversion 反型