- 更多网络例句与未退火的相关的网络例句 [注：此内容来源于网络，仅供参考]
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The epitaxial ZnO films are prepared on Al2O3 substrates by using helicon wave plasma assisted sputtering technique. The as-grown and annealed films showed different in-plane orientations.
采用螺旋波等离子体辅助溅射沉积法在衬底Al2O3的(0001)面上沉积ZnO薄膜，所生长的薄膜在未退火和退火时表现出不同的平面内取向。
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Compared with PF6P, the attachment of alkyl or alkoxyl groups on phenylene effectively inhibits the formation of fluorenone-based excimers and thus remarkably improves the thermal stability of the spectra.3. Morphology and phase behavior of the polymers substituted with alkyl and alkoxyl groups on phenylene were investigated by differential scanning calorimetry, X-ray diffraction and other techniques.
一方面，未取代的PF6P薄膜和烷氧基取代苯的PF60C6薄膜在空气中退火后都产生了芴酮结构，随退火温度的升高所生成的芴酮结构的含量逐渐增大；另一方面，新的长波发射随退火温度的升高其荧光寿命明显增加，因此确定PF6P空气退火薄膜的长波发射是来源于芴酮的激基缔合物。
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Based on the thermionic emission theory, a method to extract parameters of Si SBD is given in this study. Using this model, we tested the characteristics of devices and extracted the parameters of two kinds of samples. The ideality factor is 1.01 and 2.13 respectively. The zero-field barrier height is 0.70eV and 0.72eV. The surface state density is 5.5×10~(15)cm~(-2)eV~(-1) and 4.3×10~(12)cm~(-2)eV~(-1). The interface oxide capacitance is 9.0×10~(-4)F·cm~(-2) and 5.4×10~(-6)F·cm~(-2). The neutral level of the surface states is 0.81eV and 1.1eV. The reverse breakdown voltage is 101V and 56V.
本研究在热电子发射模型的基础上，建立一种提取Si基SBD器件特性参数的理论模型，基于这个模型，对两种样品的性能进行测试，并计算出退火和未退火样品的理想因子分别为1.01和2.13、零电场势垒高度分别为0.70eV和0.72eV、表面态浓度分别为5.5×10~(15)cm~(-2)eV~(-1)和4.3×10~(12)cm~(-2)eV~(-1)、界面层电容分别为9.0×10~(-4)F·cm~(-2)和5.4×10~(-6)F·cm~(-2)、表面态中性能级为0.81eV和1.1eV、反向击穿电压101V和56V。
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Most of apatites are unannealed and from different sources.
磷灰石样品大多未退火，来自不同的物源区。
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The authors observed the difference from previous experimental results that the resistance to dissolve in Hanks solution for the film deposited by nitrogen ion beam assistance not that annealed film is the best, but that unannealed one has been superior to the former.
与已有的实验结果不同，实验中发现，这种N离子束辅助沉积的薄膜在Hanks溶液中的抗溶解特性，不是退火试样最好而是未退火状态的膜比前者更优。
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However, the value of magnetoresistance increased apparently after annealing and was 1.74 times the unannealed sample. XRD structural analysis shows that peak intensity of the annealed sample is greater than that of the unannealed one which demonstrated an increase of crystallinity.
实验结果表明：退火后样品的薄膜电阻率显著减小，是未退火样品薄膜电阻率的3.17分之一；而退火后磁电阻值则明显增加，是未退火时的1.74倍；XRD结构分析显示，退火后薄膜样品的峰值强度大于未退火样品的强度，说明样品结晶度增强。
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The Si-rich SiO2／p-Si structure has been fabricated with two-target alternative magnetron sputtering technique.After the Si-rich SiO2／p-Si sample having been scored by diamond tip on the front surface and annealed at 800℃ in N2 the photoluminescence spectrum is found quite different from that from the unscored one,which having been annealed in the same condition.
以磁控溅射方法于p-Si上淀积富硅二氧化硅，形成富硅二氧化硅／p-Si结构，用金刚刀在其正面刻划出方形网格后在N2气氛中退火，其光致发光谱与未刻划的经同样条件退火的对比样品的PL谱有很大不同。
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The latter has only one PL band peaking at about 1.48eV,while the former is a double-band PL spectrum with peaks at both 1.48eV and 1.97eV.The electroluminescenceform the Au／scored Si-rich SiO2 film／p-Si sample is about 6 times in intensity of that of the Au／unscored one.
未刻划样品的PL谱只有一个峰，位于840nm(1.48eV)，而刻划样品的PL谱是双峰结构，峰位分别位于630nm(1.97eV)和840nm.800℃退火的刻划富硅二氧化硅/p-Si样品在背面蒸铝制成欧姆接触和正面蒸上半透明金电极后在正向偏压10V下的电致发光强度约为同样制备的未经刻划样品在同样测试条件下的EL强度的6倍。
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4Studied the signal of metal magnetic memory of samples not anneals in three magnetic fields under the torsion loads.
4研究了未退火试件在三种磁场环境中扭转的磁记忆信号。
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Seeing that the basic researches of the method of metal magnetic memory insufficiently, this text has done the following work mainly:(1)Studied the basic theory of the method of metal magnetic memory;(2)Studied the signal of metal magnetic memory of samples both anneals and not anneals in natural magnetic field and drive magnetic field under the drawn loads;(3) Studied the signal of metal magnetic memory of anneals samples in three magnetic fields under the drawn loads.
鉴于其基础研究工作不足，本文主要做了如下工作：(1)系统地研究了金属磁记忆检测技术的基本理论：(2)研究了退火试件和未退火试件在自然磁场和激励磁场环境中进行拉伸的磁记忆信号；(3)研究了退火试件在三种磁场环境中进行拉伸试验的磁记忆信号。
- 更多网络解释与未退火的相关的网络解释 [注：此内容来源于网络，仅供参考]
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unaided eye：肉眼
unadjusted eye 肉眼 | unaided eye 肉眼 | unannealed 未退火的
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unanalyzable：不能分析的;不可分解的
unaided eye 肉眼 | unanalyzable 不能分析的;不可分解的 | unannealed 未焖火的;未熟炼的;不退火的
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unannounced satellite：秘密卫星
unannealed track 未退火径迹 | unannounced satellite 秘密卫星 | unapplied cash 未指定用途的现金
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unbacked film：无衬胶卷
unannealed 未退火的 | unbacked film 无衬胶卷 | unbalance 失衡,不平衡
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unannealed：未退火的
unaided eye 肉眼 | unannealed 未退火的 | unbacked film 无衬胶卷
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unannealed：未退火的 不退火
unanimousverdit 一致裁定 | unannealed 未退火的 不退火 | unannealedtrack 未退火径迹
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unannealed：未焖火的;未熟炼的;不退火的
unanalyzable 不能分析的;不可分解的 | unannealed 未焖火的;未熟炼的;不退火的 | unapproved 未经批准的;未经允许的
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unapproved：未经批准的;未经允许的
unannealed 未焖火的;未熟炼的;不退火的 | unapproved 未经批准的;未经允许的 | unartificial 非人工的;自然的