晶粒

词组短语

crystalline grain · grain crystal · crystal particle

与晶粒相关的网络例句 [注：此内容来源于网络，仅供参考]

The structures and orientation texture evolution of UFG-Copper during AARB were studied and the results were as follows:(1)Whenεis lower or equal to 1.6,the slips happen on grain boundaries and crystal planes owing to the shearing force.There occur many sub-grains possessing small angle boundaries and 5μm grains sizes within the big grains.

研究了大变形异步叠轧制备超细晶铜材过程的组织和取向织构变化情况，结果表明：(1)变形等效应变ε≤1.6时，剪切应力的作用使晶粒与晶粒之间发生滑动，部分晶粒内部晶面发生滑移，大晶粒内部转变为许多具有小角度晶界、大小为5个微米的亚晶。

Determine the in plane displacement fields inside a large grain and around the conjunction of three grains. Results show that the in plane deformation fields are continuous in side the grain. It is also proved that it is reasonable to use the polygon element interpolation to calculate the deformation fields.

对大晶粒内部及三晶粒交点附近的面内位移场进行了精细测定，指出：晶粒内部的面内变形基本是连续的，这也证实了本文采用晶粒多边形作插值计算是符合材料的细观变形特征的，是合理的。

During the process of peptization and hydrothermal crystallization, the aggregation behavior and the resulting morphology of nanocrystalline titania (TiO2) were studied by X-ray diffraction, scanning electron microscope, and dynamic light scattering techniques.

通过XRD、SEM和动态光散射粒度测定仪研究了胶溶及水热晶化过程中纳米TiO2晶粒聚集行为及形貌。实验结果表明，在胶溶无定形沉淀过程中所形成的大小为10-15nm的锐钛矿型胶粒或金红石型胶粒易定向聚集成更大的、具有(30-50)nm×(80-100)nm的次级晶粒。含有次级晶粒的溶胶前驱液在水热晶化过程中，次级晶粒发生崩裂并生长成结晶度更高的大小约为10-30nm球形和大小约为20-60nm棒状纳米TiO2

The second experiment is to fabricate white light LED from red and green phosphors pumped by blue light LED. The blue light LED we used in our experiment has the wavelength range between 450 and 452.5 nm, and the chip size is 17 mil *14 mil. There are two kinds white light LED we fabricated in the experiment. There are three blue light LED chips bonded in single package of both kinds package. The different of the both packages is mixed phosphor of encapsulation. One of the experimental devices was encapsulated YAG phosphor mixed silicone to fabricate white light. The other is red and green phosphor mixed encapsulation. The compared and focused parameter was luminous efficiency. YAG phosphor pumped white light has the luminous efficiency 72 lm/W, CRI 70, CIE(0.32, 0.33), CCT 5622°K at the operating current 60mA. On another hand, red and green phosphor pumped white light LED has the luminous efficiency 55 lm/W, CRI 90, CIE(0.31, 0.32), CCT 6479°K at the operating current 60mA. We fabricated the red and green phosphor pumped white light LED, and proved that it could has much higher CRI under similar compared conditions, CIE xy and CCT.

第二个实验是使用蓝光LED晶粒来制作白光元件，蓝光LED晶粒波段范围在450 ~ 452.5 nm，晶粒大小为17*14 mil，以三颗蓝光LED晶粒搭配YAG萤光粉(黄绿光 540 nm)制成白光元件，再以另外三颗蓝光LED晶粒搭配红色萤光粉(613 nm)混合绿色萤光粉(519 nm)制成的白光元件进行发光效率比较；搭配YAG萤光粉的白光元件在注入60 mA的电流时所量测到最大的发光效率是在72 lm/W，演色性数值大约为70，CIE色度座标为(0.32， 0.33)，色温是在5622 °K；而搭配红色萤光粉混合绿色萤光粉的白光元件在注入60 mA的电流时，最大的发光效率在55 lm/W，演色性数值大约为90，CIE色度座标为(0.31， 0.32)，色温在6479 °K；证明了蓝光LED晶粒搭配红色萤光粉混合绿色萤光的白光元件演色性指数可以高达90 以上的结果。

The grain model of SrTiO3 was designed based on their crystal habit for {111} and {100} planes as its major grain boundary; the shape may be different with the change of the relative area of the two boundary planes.

根据SrTiO3陶瓷中晶粒以{100}和{111}晶面为主要晶界的结晶习性，以及晶粒形状随{100}和{111}占晶界面积不同而发生变化的特点，设计了适合SrTiO3晶粒形状特征的晶粒模型。

According to different assession theories, different experimental results can be given possible explanations

在较粗的晶粒范围内，大晶粒的氧化铝陶瓷具有较好的抗热震性，而在较细的晶粒范围内，小晶粒的氧化铝陶瓷具有较好的抗热震性

The results show that the effectiveness of Route A is better than Route B. After ARB of 7 passes, the microstructure of the specimen by Route A consists of thin elongated fibriform grains with an average size of 470 nm, but that by Route B does compressed grains with an average size of 680 nm. The improvement in tensile strength by Route A is greater than that by Route B. The strengthening mechanism of 1060 commercially pure aluminum by ARB is fine-grain strengthening.

结果显示：路径A的晶粒细化效果比路径B明显；ARB7道次后，采用路径A的试样的显微组织由拉长的细小纤维状晶粒组成，路径B的试样由扁平状晶粒组成；路径A和路径B的试样的平均晶粒尺寸分别为470nm和680nm；路径A的试样的抗拉强度提高程度大于路径B.1060工业纯铝在ARB过程中的强化机制主要是细晶强化。

For thin polycrystalline films, especially those with columnar structure, once the diameter of grains on the film surface is larger than the film thickness, the total area of above and under basal planes (film-substrate interface) will be larger than that of side plane.

对于薄膜特别是柱状晶薄膜，当晶粒在膜平面内的尺寸大于膜厚时，柱状晶粒的上底面和下底面的面积将大于侧面的面积，因此薄膜中的晶粒生长除像整体材料中的晶粒生长一样考虑晶界能外，还需要考虑表面能和界面能，因为各向异性的表面能和界面能将导致薄膜中的异常晶粒生长和织构变化。

For thin polycrystalline films, especially those with columnar structure, once the diameter of grains on the film surface is larger than the film thickness, the total area of above and under basal planes (film-substrate interface) will be larger than that of side plane. Therefore besides the minimization of boundary energy in traditional bulk material, surface energy, interface energy would be considered due to the anisotropy of surface energy, interface energy being able to drive the grain growth and texture evolution in thin films.

对于薄膜特别是柱状晶薄膜，当晶粒在膜平面内的尺寸大于膜厚时，柱状晶粒的上底面和下底面的面积将大于侧面的面积，因此薄膜中的晶粒生长除像整体材料中的晶粒生长一样考虑晶界能外，还需要考虑表面能和界面能，因为各向异性的表面能和界面能将导致薄膜中的异常晶粒生长和织构变化。

Based on a new three-dimensional topology-related grain growth rate equation proposed recently by MacPherson and Srolovitz, a set of analytical quasi-stationary grain size distributions were obtained.

以MacPherson-Srolovitz提出的三维个体晶粒长大拓扑依赖速率方程以及三维晶粒组织的晶粒尺寸--晶粒面数间的抛物线型统计关系为基础，导出了相应的描述三维准稳态晶粒尺寸分布的函数族。

与晶粒相关的网络解释 [注：此内容来源于网络，仅供参考]

Grain：晶粒

(sure)第三段:第二种理论是说化学腐蚀断裂的发生是因为合金原子之间的结合是不均匀的,在组成合金的 晶粒(grain)之间不稳定,在化学物质作用下会发生晶粒内部的断裂,但是这种理论也有缺陷,

Intergranular corrosion：晶粒间腐蚀

阻挠元素 interfering element | 晶粒间腐蚀 intergranular corrosion | 晶粒间裂痕 intergranular crack

intergranular fracture：晶粒间破裂

晶粒间裂痕 intergranular crack | 晶粒间破裂 intergranular fracture | 中周波感应电炉 intermediate frequency furnace

intergranular crack：晶粒间裂痕

晶粒间腐蚀 intergranular corrosion | 晶粒间裂痕 intergranular crack | 晶粒间破裂 intergranular fracture

grain refinement：晶粒细化

晶粒生长 grain growth | 晶粒细化 grain refinement | 晶粒细化剂 grain refiner

grain refinement：晶粒微化

grain percentage 魔粒率;磨料百分比 | Grain refinement 晶粒微化 | Grain refining 晶粒微化

grain refinement：晶粒粗化

70. In-mold alloying型内离金化 | 71. Grain refinement晶粒粗化 | 72. Grain refiner晶粒粗化剂

equiaxed grain：等轴晶粒

最基本的是吉布斯(Gibbs)相律,其通式如下:法(electrical resistivity method)等,这些方法都是以合金相变时发生某些物理线-- 上:液相线(liquidus);下:固相线(solidus)铸锭的最外层是一层很薄的细小等轴晶粒(equiaxed grain)区,各晶粒的cav

Grain coarsening temperature：晶粒化温度

Grain coarsening 晶粒粗化 | Grain coarsening temperature 晶粒化温度 | Grain contrast 晶粒[反光]对比

Grain coarsening temperature：晶粒粗化温度

"grain coarsening","晶粒粗化" | "grain coarsening temperature","晶粒粗化温度" | "grain contrast","晶粒[反光]对比"