掺杂的

基本解释 (translations)

impure

与掺杂的相关的网络例句 [注：此内容来源于网络，仅供参考]

In the research of prescription, through the experiments we knew the influence from the Nb_2O_5 or Y_2O_3 single donor doped on high-temperature PTC ceramic, and got the curve graph drawing the resistivity and mixing quantity. In order to restrain lead volatilize and mix the rang of donors to neutralization the harmful acceptor impurity in raw materials, adopt the prescription design of Nb_2O_5 and Y_2O_3 double donors-doped. From the result, we know that regulation proportion of Nb , Y double donors, can make high-temperature PTC ceramics semiconducting, the pottery demonstrates good electric performance.

为了能够更有效的抑制铅挥发，并且使掺杂范围能够更好的调节，以"中和"原材料中的有害受主杂质，在配方设计中采用了Nb_2O_5和Y_2O_3双施主掺杂的配方，由结果可知，适当的调节Nb、Y双施主掺杂总量及Nb、Y掺杂比例，可以使高温PTC陶瓷充分的半导化，陶瓷表现出良好的电性能。

Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.

选择同质或者异质的基质材料；在基质材料上外延生长形成变换叠加的垒层和阱层，在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质，得选择超晶格位置掺杂的p型III族氮化物材料，其中，每个生长周期的步骤为：生长带隙较宽的垒层，同时掺入受主杂质；生长施主杂质或受主杂质δ掺杂层；生长非掺的带隙较窄的阱层；生长受主杂质或施主杂质δ掺杂层；在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火，即得目标产物。

The deformed metal-SWNTs and metal-TCNTs can be transformed to semiconductor or insulator due to deformations resulting to variation of the atomic structure and the nearest-atom transfer integral having relation with the directions.Based on the Boltzmann transport equation and n - electronic energy dispersion relations for individual SWNTs, the theoretical model caculating the current and conductance of the SWNTs is deduced. The low-temperature conductances of undoping or doping SWNTs are studied numerically, the calculated results show that, for the doping SWNTs, the conductance is quantized, i.e.

我们从Boltzmann方程出发，并结合SWNTs的能量色散关系，导出了计算手性SWNTs电导或电流的理论模型，并分别对非掺杂和掺杂SWNTs的低温电导或电流进行数值计算，结果表明：对于非掺杂的SWNTs，其电导是量子化的，即电导随偏压或电子输运能量变化呈跃变的台阶式结构，这些结构随管径增大或温度升高变得不明显；对于掺杂SWNTs，当偏压为某些特定值V_i时，传导电流有跃变，且传导电流的大小、跃变周期及跃变幅度等不是完全由掺杂后的电子浓度决定的，而与管半径R及掺杂后Fermi能级附近的电子态密度有直接关系，随着温度的升高和管径的增大，跃变结构趋于平滑。

Doped high consistence Co can't increase the density of defect levels. ZnO doped Fe is different from doped Mn or Co totaly, the density of photoelectrons anddefect levels aren't reduced obviously. It's probably related the valence of Fe in crystal,general think trivalence of Fe, and form donor levels in ZnO.

Fe掺杂的ZnO完全不同于Mn、Co掺杂，其光生电子密度没有因掺杂出现明显的降低，即缺陷能级密度没有降低，这可能和掺入ZnO所呈现的价态有关，一般认为Fe为三价态，在ZnO中形成施主能级。

At first, Polyaniline was synthesized by the improved chemical oxidation technique, then, PANI/HCl, PANI/TSA and PANI/DBSA were obtained by doping emeraldine with HCl, 4-methyl benzene sulfonic acid and dodecylbenzene sulfonate acid, separately. Leucoemeraldine was obtained in the N-dimethylformamide by using phenylhydrazine deoxidizing emeraldine in N_2 atmosphere.

本文首先通过改进合成条件的化学氧化法合成了聚苯胺，经氨水脱掺杂获得本征态聚苯胺，再经盐酸、对甲苯磺酸、和十二烷基苯磺酸掺杂，分别获得到质子酸掺杂的聚苯胺样品，然后在N，N-二甲基甲酰胺中，利用苯肼，在N_2氛围下还原本征态聚苯胺得到还原态的聚苯胺。

The TC of doped samples is lower than that of undoped sample,whilethe resistivities of doped samples is two orders higher than that of the undoped sample.

在磁性上的直接反映就是，在掺杂样品的居里温度与未掺杂的样品相比有明显的下降，由此表现在输运特性上的变化就是掺杂样品的电阻率均出现了高达两个数量级的增加。

It can deliver a reversible capacity as high as 157 mAh/g at a discharging rate 0.1C at room temperature, even though the discharging current rate rise to 2C, it is able to deliver a capacity of 124 mAh/g. Temperature effects and overcharge behaviors are studied to versify its super thermodynamic stability. Another two doping manners, co-precipitation doping and spray doping, are also studied in this paper.

我们还进一步研究了不同掺杂方式对Li0.99Cu0.01FePO4电化学性能的影响，结果表明共沉淀掺杂是一条低含量离子掺杂的有效途径；喷雾法虽然也是一种很有应用前景的掺杂方式，但是尚有许多问题需要解决。

The coated article includes a glass substrate, a coating of an antimony doped tin oxide deposited on and adhering to the glass substrate and a coating of fluorine doped tin oxide deposited on and adhering to the surface of the coating of antimony doped tin oxide.

该涂敷制品包括玻璃底板、沉积和附着于该玻璃底板的锑掺杂的氧化锡涂层和沉积和附着于该锑掺杂的氧化锡涂层表面上的氟掺杂的氧化锡涂层。

Firstly, the incommensurate magnetic scattering of the doped single-layer triangular lattice in the normal state has been studied. It is shown that away from half-filling the commensurate peak is replaced by six incommensurate peaks located at [ (1-δ〓), ] , [ (1-δ′〓), ] , [ (1-δ"〓), ] , respectively, and 〓〓. The incommensurability parameter δ increases with doping at lower doping concentration, while saturates at higher dopings. These peaks broaden and weaken in amplitude with increasing energy and temperature, with the positions of the incommensurate peaks not changing with the energy.

利用t-J模型，讨论了单层和双层三角晶格材料的非公度磁散射，结果表明：随着掺杂的增加，三角晶格反铁磁体出现公度-非公度转变，即由一个公度峰变为六个非公度峰，并且非公度率在较低掺杂时随着掺杂浓度的增大而增大，在较高掺杂浓度时将达到饱和；虽然非公度峰的权重随着能量的增大而减小，但非公度峰的位置与能量无关，即非公度率是不随能量变化的，并且我们还发现非公度峰的权重随着温度的升高也是减小的。

Some preliminary studies on A_2BO_4 type oxides materials in therms of electrochemical properties have been reported. But there are seldom deep researches on electrochemical properties of doping in the A site of the A_2BO_4 type oxide.

有关未掺杂或B位掺杂的A_2BO_4型复合氧化物电化学性能已经有了一些报道，但对于A位掺杂的A_2BO_4型复合氧化物电化学性能研究鲜有报导。

与掺杂的相关的网络解释 [注：此内容来源于网络，仅供参考]

adulterated food：掺杂食物

adulterated flour | 掺杂粉, 掺杂的面粉 | adulterated food | 掺杂食物 | adulterated goods | 假货

dope additive：掺杂剂

dope 掺杂剂,涂料,上涂料,明胶,防爆剂 | dope additive 掺杂剂 | doped crystal 掺杂的晶体

doped：掺杂的

前者改变经掺杂的(doped)金属氧化物半导体的电阻特性,它与温度有密切关系,多用於电子鼻仪器,且已商业化;后者则改变导电型聚合物分子链上的离子或σ键的结合方式,因而改变了聚合物的性质,其中需用毫微科技来处理两电极片间的间隙(10~20μm).

doped：掺杂的掺了添加剂的

doped lubricating oil 有添加剂的润滑油 | doped 掺杂的掺了添加剂的 | doping compensation 掺杂补偿

doped crystal：掺杂的晶体

dope additive 掺杂剂 | doped crystal 掺杂的晶体 | doped fuel 加防爆剂的燃料

doped crystal：掺杂的晶体WcF中国学习动力网

dope additive 掺杂剂WcF中国学习动力网 | doped crystal 掺杂的晶体WcF中国学习动力网 | doped junction 掺杂质结WcF中国学习动力网

impure：掺杂的;不纯的;未精制的

impulsing冲击;发生脉冲 | impure掺杂的;不纯的;未精制的 | impurity杂质;夹杂物

unadulterated：未掺杂的;纯粹的;真正的;地道的;自然的;朴素的

unactivated state 末激活(状)态 | unadulterated 未掺杂的;纯粹的;真正的;地道的;自然的;朴素的 | unaflow 单流;直流

undoped：无掺杂的

undisturbed 无扰动的 | undoped 无掺杂的 | undoped diode 非掺杂二极管

undoped：无掺杂的;纯的

undisturbed flow 稳流;未扰乱流 | undoped 无掺杂的;纯的 | undrawn 未开膛的;未去內臓的