- 更多网络例句与掺杂半导体相关的网络例句 [注：此内容来源于网络，仅供参考]
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The present invention provides a doped semiconductor nano-crystalline and its preparing method.
本发明涉及一种掺杂半导体纳米晶及其制备方法。
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In this thesis the preparation of doped composite semiconductor photocatalyst as well as its photocatalytic performance for hydrogen production was searched. The reseach works is composed of two parts: The first part was the study on the preparation of CdS-SiO_2 and its photocatalytic performance.
本文研究了复合掺杂半导体可见光催化剂的制备及其光催化制氢性能，主要分为两个部分：一、复合半导体催化剂CdS-SiO_2的制备及其光催化性能研究。
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In some embodiments, a graded semiconductor buffer layer is located beneath the buried oxide layer, while in other a doped semiconductor layer including Si doped with at least one of B or C is located beneath the buried oxide layer.
在一些实施方案中，渐变半导体缓冲层位于隐埋氧化物层下面，而在其他实施方案中，包含掺杂有B或C中至少一种的Si的掺杂半导体层位于隐埋氧化物层下面。
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Selective doping has been proved to be a semiconductor oxide improve the photocatalytic activity of the most effective ways The introduction of certain metal ions can greatly improve the photocatalytic oxidation efficiency, Recently, a lot on the adoption of the doping to improve the photocatalytic oxidation performance reports, doped semiconductor photocatalysis material because of its physical and optical properties change, thereby improving the photocatalytic properties.
有选择性的进行掺杂已被证明是一种提高半导体氧化物光催化活性的极其有效的方法，掺入一定的金属阳离子能极大的提高TiO2的光催化效率，最近有大量的关于通过掺杂来提高TiO2的光催化性能的报道，掺杂的半导体光催化材料由于其物理和光学性质的改变，通过扩展光响应范围和提高光生电荷的分，从而提高了光催化性能。
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We show that, compared to most photonic crystals made from two different dielectrics, these doped semiconductor/dielectrics 1D photonic crystals can not only form the photonic gap, but also can enhance the terahertz transmission through n-GaAs.
研究结果发现，与一般由两种介电材料组成的一维光子晶体不同，由于掺杂半导体中自由载流子对太赫兹波存在较强的吸收，所以这种材料组成的一维光子晶体除可形成光子带隙外，还可以增强n-GaAs对太赫兹波的透射。
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In this work, the terahertz transimission spectrum through a 1-demensional photonic crystal made from doped semiconductor n-GaAs/polycarbonate is studied by the transfer-matrix method.
本文利用传输矩阵方法研究了掺杂半导体n-GaAs/聚碳酸脂一维光子晶体的太赫兹波透射谱。
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The electrocatalytic electrodes, including titanium anodes coated with transition metal, metal oxides and doped semiconductor, diamond electrodes and three dimensional electrodes are summarized and assessed.
在分析中，综述了电催化高级氧化电极研究现状，阐述与评价了过渡金属涂层电极、金属氧化物涂层电极、含掺杂半导体涂层电极、金刚石膜电极、三维电极等几个主要方面的研究成果，并对今后工作的重点提出了一些意见。
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Electrical oscillations in a metallic "sending coil" radiate inductive photons toward one or more "energy-magnifying coils" comprised of a photoconductor or doped semiconductor coating a metallic conductor, or comprised of a superconductor.
电气振荡的一个金属"发送线圈"辐射感应光子对一个或一个以上的"能源-放大镜线圈"组成的一个光导体或掺杂半导体涂层的金属导体，或组成的超导。
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We study the field enhancements in the waveguide structures by doped semiconductor material, and analyze their electromagnetic fields for different structures under the plane wave illumination or the short pulse. We design several doped silicon slots cavity and slot chains with large field enhancement, and describe their physical mechanism.
我们研究掺杂半导体波导结构对兆赫波电磁场增益之影响，使用电磁模拟针对不同结构做探讨，并分析连续波和脉冲波之电磁场变化，设计具有强场增益之掺杂半导体的矽狭缝和矽狭缝链之结构，并探讨其物理机制。
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The Hall effect,XPS,optical absorption,Raman scattering,and cathode luminescence have been used to study the electrical properties,crystal quality,and defects of indium-doped bulk ZnO single crystals grown by the chemical vapor transport method.
张璠 中国科学院半导体研究所，北京 100083赵有文中国科学院半导体研究所，北京 100083董志远中国科学院半导体研究所，北京 100083张瑞中国科学院半导体研究所，北京 100083杨俊中国科学院半导体研究所，北京 100083研究了In掺杂n型ZnO体单晶的化学气相传输法生长和材料性质。
- 更多网络解释与掺杂半导体相关的网络解释 [注：此内容来源于网络，仅供参考]
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semiconductor display device：半导体显示掐
semiconductor diode 半导体二极管 | semiconductor display device 半导体显示掐 | semiconductor doping 半导体掺杂
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semiconductor display device：半导体显示装置
semiconductor diode 半导体二极管 | semiconductor display device 半导体显示装置 | semiconductor doping 半导体掺杂
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doped semiconductor：掺杂半导体
Dopant 掺杂剂 | Doped semiconductor 掺杂半导体 | oping concentration 掺杂浓度
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p doped semiconductor p：型半导体
p doped drain p型掺杂漏极 | p doped semiconductor p型半导体 | p doped source p型掺杂源极
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doped：掺杂的
前者改变经掺杂的(doped)金属氧化物半导体的电阻特性,它与温度有密切关系,多用於电子鼻仪器,且已商业化;后者则改变导电型聚合物分子链上的离子或σ键的结合方式,因而改变了聚合物的性质,其中需用毫微科技来处理两电极片间的间隙(10~20μm).
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Extrinsic semiconductor：杂质半导体
杂质半导体(extrinsic semiconductor) 半导体中的杂质对电导率的影响非常大,本征半导体经过掺杂就形成杂质半导体,一般可分为n型半导体和p型半导体. 半导体中掺入微量杂质时,杂质原子附近的周期势场受到干扰并形成附加的束缚状态,在禁带中产生附加的杂质能级.
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Extrinsic semiconductor：外质半导体
而掺杂过的半导体则称为外质半导体(extrinsic semiconductor). 以一个硅的本质半导体来说明掺杂的影响. 硅有四个价电子,常用于硅的掺杂物有三价与五价的元素. 当只有三个价电子的三价元素如硼(boron)掺杂至硅半导体中时,硼扮演的即是受体的角色,
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intrinsic semiconductor：本征半导体
顾名思义:导电性能介于导体与绝缘体(insulator)之间的材料,叫做半导体(semiconductor).本征半导体(intrinsic semiconductor) 没有掺杂且无晶格缺陷的纯净半导体称为本征半导体在绝对零度温度下,半导体的价带(valence band)是满带(见能带理论),
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intrinsic semiconductor：本质半导体
掺杂进入本质半导体(intrinsic semiconductor)的杂质浓度与极性皆会对半导体的导电特性产生很大的影响. 而掺杂过的半导体则称为外质半导体(extrinsic semiconductor). 半导体和绝缘体之间的差异主要来自两者的能带(band)宽度不同
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oping concentration：掺杂浓度
Doped semiconductor 掺杂半导体 | oping concentration 掺杂浓度 | Electrode 电极