掺杂

基本解释 (translations)

adulterate  ·  adulteration  ·  doping  ·  intermingle  ·  adulterates  ·  adulterating  ·  intermingled  ·  intermingles  ·  intermingling

与掺杂相关的网络例句 [注：此内容来源于网络，仅供参考]

In the research of prescription, through the experiments we knew the influence from the Nb_2O_5 or Y_2O_3 single donor doped on high-temperature PTC ceramic, and got the curve graph drawing the resistivity and mixing quantity. In order to restrain lead volatilize and mix the rang of donors to neutralization the harmful acceptor impurity in raw materials, adopt the prescription design of Nb_2O_5 and Y_2O_3 double donors-doped. From the result, we know that regulation proportion of Nb , Y double donors, can make high-temperature PTC ceramics semiconducting, the pottery demonstrates good electric performance.

为了能够更有效的抑制铅挥发，并且使掺杂范围能够更好的调节，以"中和"原材料中的有害受主杂质，在配方设计中采用了Nb_2O_5和Y_2O_3双施主掺杂的配方，由结果可知，适当的调节Nb、Y双施主掺杂总量及Nb、Y掺杂比例，可以使高温PTC陶瓷充分的半导化，陶瓷表现出良好的电性能。

Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.

选择同质或者异质的基质材料；在基质材料上外延生长形成变换叠加的垒层和阱层，在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质，得选择超晶格位置掺杂的p型III族氮化物材料，其中，每个生长周期的步骤为：生长带隙较宽的垒层，同时掺入受主杂质；生长施主杂质或受主杂质δ掺杂层；生长非掺的带隙较窄的阱层；生长受主杂质或施主杂质δ掺杂层；在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火，即得目标产物。

This invention discloses a new technology for preparing rear earth ionic doped fiber prefabricated rods with DC-RTA technology in a sol-gel method including preparing sol containing necessary doped ions, coating said sol uniformly on the inner wall of the quartz glass tube and burning it under high temperature to coagulate and vitrify them to a doped layer and repeating the above process to form a fiber prefabricated rod by oxygen and hydrogen flame after the doped layer reaches to a designed thickness and the fiber prefabricated rod can be made to various rare earth ionic doped fibers by an ordinary drawbench technology.

本发明属于光纤制造和光纤激光技术领域，具体公开了一种利用溶胶凝胶方法中的DC-RTA技术制备稀土离子掺杂光纤预制棒的新工艺。该工艺步骤包括预先配制好含有所需掺杂离子的溶胶，将该溶胶均匀涂覆在石英玻璃管的内壁后高温灼烧，使之凝结并玻璃化为一层掺杂层。反复上述涂覆灼烧过程，在掺杂层达到设计厚度后由氢氧焰高温收棒形成光纤预制棒。该方法所得到的光纤预制棒可以通过普通拉丝工艺拉制成各类稀土离子掺杂光纤。

The results show that the compound conductive fiber has typical structure of sheath-core consists of black greened polyaniline electric conductive deposition as the skin and the white polypropylene matrix fiber as the core, which makes the compound fiber preferable physical mechanical property. The intensity and the elongation ratio of the electric conductive fiber are decreased but the thermal stability is enhanced after modified. The compound fiber has the good acid resistance but poor base resistance. The thermal stability of the compound fiber prepared by 4-methyl-benzene sulfonic acid is better than that prepared by hydrochloride acid. Moreover, the compound fiber can be re-doped by other organic or inorganic acid after freed from the adsorbed acid. Furthermore, the electric conductivity of the compound fiber decreases with the temperature increasing but hardly changed with the humidity. The adsorptive ability and therefore the content of the polyaniline, the constant of electric conduction, and the durability of the compound fiber can be enhanced by thinning the diameter, section heteromorphosis, section heteromorphosis and plasma treatment of the surface or blending with COPET of the fiber.

结果表明：复合纤维是聚丙烯与聚苯胺的共混体系，具有典型的皮芯型结构，皮层为墨绿色的聚苯胺沉积层，形成连续的导电通道，芯层为白色的聚丙烯基质纤维，提供物理机械性能；导电改性后纤维的强度、强力和伸长率均有下降，但热稳定性得到提高；复合纤维的耐酸性比耐碱性好，以对甲苯磺酸做掺杂酸比盐酸掺杂聚苯胺热稳定性好，脱掺杂后的复合纤维，可用其它无机酸或有机酸进行再掺杂；复合导电纤维的电导率随温度升高降低幅度较大，但几乎不受湿度影响；基质纤维细旦化、截面异形化、表面等离子体处理或共混COPET等改性处理均能提高纤维的吸附性，进而提高复合纤维表面聚苯胺含量、电导率和耐久性。

The deformed metal-SWNTs and metal-TCNTs can be transformed to semiconductor or insulator due to deformations resulting to variation of the atomic structure and the nearest-atom transfer integral having relation with the directions.Based on the Boltzmann transport equation and n - electronic energy dispersion relations for individual SWNTs, the theoretical model caculating the current and conductance of the SWNTs is deduced. The low-temperature conductances of undoping or doping SWNTs are studied numerically, the calculated results show that, for the doping SWNTs, the conductance is quantized, i.e.

我们从Boltzmann方程出发，并结合SWNTs的能量色散关系，导出了计算手性SWNTs电导或电流的理论模型，并分别对非掺杂和掺杂SWNTs的低温电导或电流进行数值计算，结果表明：对于非掺杂的SWNTs，其电导是量子化的，即电导随偏压或电子输运能量变化呈跃变的台阶式结构，这些结构随管径增大或温度升高变得不明显；对于掺杂SWNTs，当偏压为某些特定值V_i时，传导电流有跃变，且传导电流的大小、跃变周期及跃变幅度等不是完全由掺杂后的电子浓度决定的，而与管半径R及掺杂后Fermi能级附近的电子态密度有直接关系，随着温度的升高和管径的增大，跃变结构趋于平滑。

Finally, the relationship between the performance of doped a-Si: H and process conditions is discussed, which includes the deposition of n〓-a-Si: H and p〓-a-Si: H, the relationship between dark conductivity, photoconductivity of boron light-doped a-Si: H and process conditions, and the relationship between the stability of LCLV and S-W effect of a-Si: H.

最后讨论了掺杂a-Si：H的性能与工艺条件的关系，包括重掺杂n〓、p〓非晶硅的制备，硼轻掺杂a-Si：H的暗态电导率与工艺条件的关系，硼轻掺杂a-Si：H的光电导与工艺条件的关系，以及液晶光阀的稳定性与a-Si：H的S-W效应。

The effects of doping concentration of iodine, doping time, doping temperature and exposure time on volume resistivity of anthracite were studied; and also the effects of solution concentration of cupric chloride, doping time, doping temperature, soking time of cupric chloride and exposure time on the volume resistivity were studied; Anthracitic resistivity has been decreased in dissimilar extent, and furthermore ,volume resistivity stability of the doping anthracite made by liquid phase doping method is more better than gas phase mothed; Resistivity and its stability were better than the doping method of iodine in fused salt doping method of cupric chloride.

研究了I_2掺杂浓度、掺杂时间、掺杂温度和暴空时间对无烟煤电阻率的影响；探讨了CuCl_2溶液的浓度、掺杂时间、掺杂温度和CuCl_2溶液浸泡放置时间以及暴空时间对无烟煤电阻率的影响：结果发现：I_2气相掺杂和液相掺杂均使无烟煤的电阻率有不同程度的降低，而液相掺杂法所得材料的电阻率稳定性更高；CuCl_2熔盐掺杂法所得材料的电阻率及其稳定性均优于I_2掺杂法。

It can deliver a reversible capacity as high as 157 mAh/g at a discharging rate 0.1C at room temperature, even though the discharging current rate rise to 2C, it is able to deliver a capacity of 124 mAh/g. Temperature effects and overcharge behaviors are studied to versify its super thermodynamic stability. Another two doping manners, co-precipitation doping and spray doping, are also studied in this paper.

我们还进一步研究了不同掺杂方式对Li0.99Cu0.01FePO4电化学性能的影响，结果表明共沉淀掺杂是一条低含量离子掺杂的有效途径；喷雾法虽然也是一种很有应用前景的掺杂方式，但是尚有许多问题需要解决。

Sensing ability of PSS/PANI self-assembled film with different doping/dedoping structure to DMMP and CEES was investigated. Results demonstrate that the gas sensitivity of PSS/PANI self-assembled film is affected by the size of dopant counterions. Gas sensitivity of self-assembled film increases with increasing size of dopant counterions. It is found that sensing ability of PSS/PANI self-assembled film to DMMP increases significantly by redoping/dedoping EB-PSS/PANI film with sarin acid that has similar structure with DMMP.

首次考察了不同掺杂/脱掺杂结构的PSS/PANI自组装膜对化学战剂模拟剂DMMP和CEES的敏感性能，研究表明，掺杂酸对离子的尺寸大小对PSS/PANI自组装膜的气敏性有很大影响，较大的对离子尺寸有利于提高自组装膜的气敏性；并且发现采用与DMMP结构类似的沙林酸对EB-PSS/PANI自组装膜进行再掺杂-脱掺杂，能显著提高PSS/PANI自组装膜对DMMP的敏感性能。

On the basis of dopping carbon anode by soaking, the preparation of dopping solvent by mechanical mixing method and their electrocatalytic results are studied.

在原有的浸渍法掺杂碳阳极的基础上，全面考察了机械混合法掺杂碳阳极的掺杂剂制备和掺杂效果，并将其与浸渍法掺杂进行了比较。

与掺杂相关的网络解释 [注：此内容来源于网络，仅供参考]

adulterated food：掺杂食物

adulterated flour | 掺杂粉, 掺杂的面粉 | adulterated food | 掺杂食物 | adulterated goods | 假货

dope additive：掺杂剂

dope 掺杂剂,涂料,上涂料,明胶,防爆剂 | dope additive 掺杂剂 | doped crystal 掺杂的晶体

dope additive：掺杂添加物

Dopant 掺杂剂 | Dope Additive 掺杂添加物 | Doped Junction 掺杂接合

doped semiconductor：掺杂半导体

Dopant 掺杂剂 | Doped semiconductor 掺杂半导体 | oping concentration 掺杂浓度

doped junction：掺杂接合

Dope Additive 掺杂添加物 | Doped Junction 掺杂接合 | Doping 掺杂

doper：掺杂装置

doped polysilicon diffusion 掺杂的多晶硅扩散 | doper 掺杂装置 | doping 掺杂

doping compensation：掺杂补偿

doping agent 掺杂剂 | doping compensation 掺杂补偿 | doping density 掺杂密度

doping compensation：掺杂补偿WcF中国学习动力网

doping agent 掺杂剂WcF中国学习动力网 | doping compensation 掺杂补偿WcF中国学习动力网 | doping density 掺杂密度WcF中国学习动力网

doping density：掺杂密度

doping compensation 掺杂补偿 | doping density 掺杂密度 | doping depth 掺杂深度

doping density：掺杂密度WcF中国学习动力网

doping compensation 掺杂补偿WcF中国学习动力网 | doping density 掺杂密度WcF中国学习动力网 | doping depth 掺杂深度WcF中国学习动力网