- 更多网络例句与拉单晶的相关的网络例句 [注：此内容来源于网络，仅供参考]
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This paper present the first known attempt to empirically model and experimentally verify the growth of ilmenite single crystals using the Czockralski process.
首次尝试用神经网络建立提拉法钛单晶生长过程的经验模型并通过试验验证模型的有效性。
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Molecular dynamics simulation was carried out to study transformation pseudoelasticity in NiAl alloy with a initial B2 structure, using EAM type interatomic potential for NiAl.
利用NiAl合金的嵌入原子势，进行了B2结构NiAl单晶中相变伪弹性的分子动力学模拟模拟过程中系统的径向分布函数和键连线原子分布图的变化表明，在外加拉应力的作用下，B2结构的奥氏体向L10结构的马氏体转变，马氏体在长大过程中发生了变体间的转化与合并，不同取向的变体之间由于自协调效应形成共格的孪晶界面。
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The dislocation configuration in a single crystal Ni base alloy with (100) plane parallel to stress axis during primary creep has been investigated by TEM.
利用TEM研究了单晶镍基合金平行于应力轴的（100）晶面拉伸蠕变初期的位错组态，表明：形变特征是位错在γ相八面体滑移系中运动。
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The Evolutional manners and dimensional rules of γmatrix and γ'precipitates in the [001], [110] and [111] oriented specimens of nickel-base single crystal superalloy CMSX-4 during the tensile creep at 1253 K and 350 MPa were studied.The effects of the change in characteristic dimensions of γand γ' phases on the strain and strain rate were compared for the differently oriented single crystal specimens.It was found that the effect of change in mean width of γchannels along the direction of directional coarsening of γ' precipitates(the lamella spacings between adjacent rafted γ'precipitates)on the strain and strain rate is remarkable.
研究了1253K，350MPa拉伸蠕变过程中[001]，[110]和[111]取向镍基单晶高温合金CMSX－4基体相γ和析出相γ'的演变方式及相尺寸的变化规律比较了不同取向单晶试样中γ和γ'特征尺寸的变化对蠕变应变量和应变速率的影响结果表明，沿γ'定向粗化方向上γ基体通道宽度的变化速率对蠕变应变量和应变速率的影响较为明显。
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Compared with polycrystalline Cu, the as-cast single crystal copper shows better plasticity and extensibility, and has a lower electricity resistance. Its elongation of cold rolling can reach 6100% without any cracks in the edges. The single crystal copper exhibits more serious work hardening in wiredrawing. The plasticity and ...
结果表明：和多晶铜相比，单晶铜在铸态时具有良好的塑性和较低的电阻率，并具有优异的室温延展性，其延伸率可达 6 10 0 %以上；冷拉拔加工后单晶铜表现出更大的加工硬化现象，但采用合理的退火工艺可使其加工硬化得到缓解。
- 更多网络解释与拉单晶的相关的网络解释 [注：此内容来源于网络，仅供参考]
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tensile stress：拉伸应力
4.应变硅(strain silicon)外延:在松弛(relaxed)的SiGe层上面外延Si,由于Si跟SiGe晶格常数失配而导致Si单晶层受到下面SiGe层的拉伸应力(tensile stress)而使得电子的迁移率(mobility)得到增大,而Idsat得增大意味着器件响应速度的提高,
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pulled junction：生长结
pulled crystal 拉制的晶体 | pulled junction 生长结 | puller 拉单晶机
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epitaxy：外延
许多发光器件使用单晶.根据不同的器件要求,单晶的种类,大小以及生长方法是各种 0 各样的.有的晶体,要在 2000 C高温下用提拉法生长;有的在室温下在溶液中生长;有的在 同类晶片上在气相或液相中外延(epitaxy)生长:有的则因得不到所需尺寸的同类晶片作 衬底,