常数层

词组短语

constant sheaf

与常数层相关的网络例句 [注：此内容来源于网络，仅供参考]

A large uumber of numerical calculations using the analytic formula and the dispersion equation have been candied out on the relations of the attenuation and phase constant with wave frequency, thickness and conductivity of the lossy layer.

此式适用于截止频率附近，通过解析表达式和波导模式色散方程，对衰减常数和相位常数进行了大量数值计算，得到了它们随损耗层厚度、频率以及损耗层电导率的变化规律，两种方法所获得的结果有较好的一致性，研究表明，损耗强度和损耗层厚度的变化会改变波导中电磁模式的色散和简并特性，对于改善高功率回旋行波放大器中注波互作用带宽和模式竞争非常有益。

It is clearly that only two geometrical parameters i.e. maximal misalignment angle and distortion width need to be determined experimentally.The engineering constants around the stitch hole in the composite laminate are analyzed using the FDM.

采用纤维弯曲模型分析了缝纫复合材料单层在缝纫孔附近的最大纤维偏转角、缝纫影响区以及缝纫复合材料单层及层合板工程常数的变化，发现工程常数具有很明显的区域性，能够看出各层中树脂富集区的痕迹。

The invention relates to an organic thin-film transistor of three-layer composite film insulated gate which comprises a substrate (1), a metal electrode (2), a organic semiconductor layer (6), a source/leakage electrode; and also comprises: a low dielectric constant polymer layer (3), a high dielectric constant oxide layer (4), a low dielectric constant polymer layer (5), three-layer composite film insulated gate is composed of the (3) layer, the (4)layer and the (5) layer.

本发明涉及三层复合膜绝缘栅的有机薄膜晶体管，包括衬底(1)，金属电极(2)，有机半导体(6)层，源/漏电极(7)；还包括：低介电常数聚合物层(3)，高介电常数氧化物层(4)，低介电常数聚合物层(5)，所述的(3)、(4)和(5)层构成三层复合膜绝缘栅。

The relations of inducing skin current of shielding layer, core voltage and core current with the environment field were obtained. The change of shield layer current wave with grounding state of external shield and core voltage with loading resistance was analyzed. According to the dependence of shield layer current oscillating frequency on electromagnetic wave propagation velocity, conception of transporting line of shield layer-ground with equivalent relative dielectric constant was presented. fited equation of equivalent relative dielectric constant with change of cable height was given.

试验得到九芯电缆屏蔽层感应电流、芯线感应电压、芯线感应电流以及环境场之间的关系；分析了皮电流波形随外皮接地状态的变化，芯电压随负载电阻的变化；基于皮电流振荡频率与电磁波传播速度的关系，提出了屏蔽层-大地"传输线"等效相对介电常数概念，给出了等效相对介电常数随电缆高度变化的拟合式；皮电流计算与测量结果在波形、振荡周期、衰减规律等方面有较好的一致性。

We got the simple and high accurate eigenvalue equations and cutoff frequency formulae of all propagation modes. Second, to the optical fiber with homogeneous cladding, we defined the "permittivity ratio", and we got the simple and high accurate connection of cutoff frequency to the ratio. Third, to the fiber with inhomogeneous cladding, we analyzed the dispersive and power-frequency characteristics.

第二，对于具有各向同性包层的弱渐变光纤，引入了介电比，找到了精度高且形式简洁的截止频率对折射率参数的依赖关系；第三，对于具有各向异性包层的弱渐变光纤，首次通过包层的轴向与横向的介电常数比分析了该类光纤的色散和功率特性。

This project was established based on the first cooperative development of optical in situ real time detecting technique probing the atomic scale layer-by-layer epitaxy growth of oxide film. Over the last three years, we have given full play to the advantages and characteristics of both sides and have finished the assumptions and plans of this subject satisfactorily. 1. In Institute of Physics, we set up advanced oblique-incidence reflectivity difference equipment and wrote one data acquisition procedure that made the simultaneous detection of optical signal and RHEED signal into reality. 2. The first observation of sustained oscillations over hundreds of monolayers in both real and imaginary signals during the epitaxy growth of SrNb0.1Ti0.9O3 on SrTiO3 substrate in LMBE testifies that oblique-incidence is an excellent method to detect and monitor film epitaxy growth real time. 3. For the first time, we verify that oblique-incidence reflectivity difference method can be used to monitor the layer-by-layer growth mode during continuous growth through the correspondence between optical signals to atomic or molecular step edge density on the growth surface. 4. Phenomenological analysis shows that optical signals comprise three parts, the first is proportional to the average thickness of the film and depends on the bulk phase dielectric response; the second is proportional to the coverage of terraces and depends on the dielectric response of atoms or unit cells in the terrace; the third is proportional to the coverage of step edges and depends on the effective dielectric response of atoms or unit cells at step edges. This makes oblique-incident reflectivity difference technique a quantitative macroscopic method to monitor film growth.

中文摘要：本课题是在合作首次发展了氧化物薄膜原子尺度层状外延生长光学原位实时探测方法的基础上立项的，三年来，我们充分发挥双方的优势和特点，圆满完成了课题的设想和计划。1、在物理所建立了一套先进的光反射差法装置，编写了计算机系统的数据采集程序，实现了两路光学信号和RHEED数据的同步采集和显示。2、用激光分子束外延在SrTiO3基底上生长SrNb0.1Ti0.9O3薄膜，首次观测到连续外延几百个原胞层，周期振荡的光反射差实部和虚部信号，证明了光反射差法是一种能原位实时探测与监控薄膜层状外延生长的好方法。3、首次验证了通过对生长表面原子或分子台阶密度的响应，光反射差法可用于原位实时监测在连续生长条件下薄膜的层式生长模式。4、通过唯象理论的研究，证明光反射差信号由三项组成，第一项只与薄膜的平均厚度和宏观光学电介质常数有关；第二项与分子台阶面覆盖度和台阶面上分子层的光学电介质常数有关；第三项与台阶边缘的覆盖度成正比，并和在台阶边缘的分子的有效光学介电常数有关。

In the first part, it was investigated the interaction between Pb2+ and La4Ti9O24 ceramic bulk. The result shows that a significant Pb2+ diffusion into La4Ti9O24 ceramic bulk and a significant crystallization of the La2/3TiO3-type phase is clearly observed in the Pb2+ diffusion layer. The reacted zone consists of the La2/3TiO3-type phase exhibits the linear dependence of the square of the thickness, x, on the heat-treated time, t, in excellent agreement with the parabolic law x2 = kt, where k is the growth rate coefficient. The kinetic study thus indicates that the Pb2+/La4Ti9O24 interaction strictly obeys the theory of the reactive diffusion. Furthermore, the experimental k values were used to determine the associated activation energy, Ea, for the formation of La2/3TiO3-type phase using the Arrhenius plot and the following least-square equation, ln =-Ea/RT + A, where T is the annealing temperature, R is the universal gas constant, and A is a constant, resulting in Ea ~ 607 ?b 60 kJ/mol.

首先， 以巨观的方式观察PbO与La4Ti9O24陶瓷体介面的反应现象；利用X-ray绕射分析以及扫描式电子显微镜来观察不同的热处理温度以及不同的持温时间所制作的样品，研究结果发现， Pb2+离子会渗入到La4Ti9O24陶瓷内，同时在Pb2+离子所渗入的区域内会产生新的La2/3TiO3-type钙钛矿斜方晶相；藉由量测不同温度与时间之样品，其因Pb2+离子渗入而产生之La2/3TiO3-type相层厚度之关系，符合反应式扩散机制中 x2 = kt 之关系式(其中 x：扩散层厚度； k：反应速率常数； t：反应时间)；进一步将不同实验条件所得到之反应速率常数值代入Arrhenius方程式ln (k =-Ea/RT + A ，其中Ea：活化能； T：绝对温度； R：气体反应常数； A：常数，可以求得Pb2+离子与La4Ti9O24陶瓷发生反应式扩散所需之活化能为607 ± 60 kJ/mol。

It indicated that the multiple-layered films were mainly composed by C-F, C=C and Si-O bonging, a little Si-C and Si-F bonding were also existed because of history effect. The bondgap were calculated as 2.7eV. The dielectric constant of the multiple-layered films was close relative to the thickness of the covering layer-SiOx, so the thickness had better be reduce. The bonding configurations of multiple-layered films had no evident changes after 400癈 annealing, the thickness raise very little and the dielectric constant increase 8%. Compared with one-layered a-C:F films prepared in the same conditions, the SiOx/a-C:F/SiOx multiple-layered films had a better thermal stability.

结果表明，多层膜主要由C-F，C=C，Si-O键构成，由于器壁的历史效应，薄膜中还存在少量Si-C和Si-F键；多层膜的光学带隙经计算约为2.7eV；多层膜的介电常数与包层SiO_x厚度有很大关系，应尽可能减小SiO_x厚度；在经历200-400℃的N_2氛围中退火后，多层膜的红外结构没有发生太大的变化：膜厚度稍微增大，介电常数只增加了8％，与同样制备条件下沉积的单层a-C：F薄膜相比具有较好的热稳定性。

Performed tests based on seven kinds of important structural parameters which were wall thickness, shielding thickness, the radial wall shielding insertion depth, the width of the radial electrode, the electrode width, the relative dielectric constant of wall material and filler shield relative dielectric constant, and studied on structural parameters and the corresponding performances by RBF neural network, the optimization based on PSO was performed with the regression model.

该方法以敏感场整体灵敏度大小等系统性能为优化目标，基于管壁厚度、屏蔽层厚度、径向屏蔽插入管壁深度、径向电极宽度、电极宽度、管壁材料的相对介电常数、屏蔽层填充物相对介电常数7种重要的结构参数进行试验。应用RBF神经网络对多组结构参数以及对应的系统性能指标进行学习，得到回归模型，并应用粒子群算法进行寻优。

The structure of the thin film capacitor 1 of this invention is: form sequentially at least the bottom electrode layer 102, the high dielectrics constant oxide film 103 and the upper electrode layer 105 on the semiconductor substrate 101; said upper electrode layer 105 which is a film layer 104 formed by the electrical conductive material which is processable by reactive ion etching, or a multilayered film composed of two kinds of film layers 107 and 108, which are each formed of a conductive material which is processable by at least two kinds of reactive ion etching.

要约 薄膜电容器1是至少在半导体基片101上按顺序形成下部电极层102、高介电常数氧化物膜层103、上部电极层105而构成的薄膜电容器，该上部电极层105由一种仅由可用反应性离子刻蚀加工的导电性材料形成的膜层104，或至少两种由可用反应性离子刻蚀加工的导电性材料分别形成层状的多层膜层107和108构成；经历350℃的热试验之后，对该薄膜电容器1施加OV到2V的驱动电压的薄膜电容器漏电电流密度为1×10 －8 A/cm 2 以下。

与常数层相关的网络解释 [注：此内容来源于网络，仅供参考]

amorphous carbon：非晶碳

王清帆;郑丰绪;陈振隆 本发明揭示一种低介电常数介电质层的蚀刻方法,包括下列步骤:提供一基板,上述基板具有一低介电常数介电质层;于上述低介电常数介电质层上形成一非晶碳(amorphous carbon)植入层;于上述非晶碳植入层上形成一阻剂层;

CMP：(化学机械研磨)制程

其中关键性制程包括有:低介电常数介电膜之乾式蚀刻及清洗制程、溅镀填充铜扩散阻障层及电镀铜晶种层、铜电镀制程以及铜化学机械研磨制程(CMP). #F#图二:以0.18微米元件线幅之五层铜/低介电常数介电膜导线结构之示意图.

locally constant function：局部常值函数

locally connected space 局部连通空间 | locally constant function 局部常值函数 | locally constant sheaf 局部常数层

constant sheaf：常数层

constant pressure surface 等压面 | constant sheaf 常数层 | constant sum game 常和对策

locally constant sheaf：局部常数层

locally constant function 局部常值函数 | locally constant sheaf 局部常数层 | locally contractible space 局部可缩空间

constant sum game：常和对策

constant sheaf 常数层 | constant sum game 常和对策 | constant term 常数项

locally contractible space：局部可缩空间

locally constant sheaf 局部常数层 | locally contractible space 局部可缩空间 | locally convex algebra 局部凸代数

newcomb precession constant：纽科姆旋进常数

neutrosphere 中性层 | newcomb precession constant 纽科姆旋进常数 | newton 牛顿

photoelastic constant：光弹性常数

photoelastic coating 光弹性镀层 | photoelastic constant 光弹性常数 | photoelastic effect 光弹性效应

reactivated structural bed：再活动构造层

反应速度常数 reaction velocity constant | 再活动构造层 reactivated structural bed | 再活动作用 reactivation