- 更多网络例句与少数载流子相关的网络例句 [注：此内容来源于网络，仅供参考]
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It is very important for the performance of semiconductor components and photoelectric conversion efficiency of crystalline silicon solar cells.
摘 要：少数载流子寿命是半导体晶体硅材料的一项重要参数，它对半导体器件的性能、晶体硅太阳能电池的光电转换效率都有重要的影响。
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Decreasing N diffusion width and distance between N diffusion and emitter of minority carriers current can increase MAAP efficiency.
由模拟结果可知，减小N型扩散区的宽度，减小N型扩散区与少数载流子发射极之间的距离，增加P型扩散区的掺杂浓度以及使第二个衬底接触浮空可以有效地提升多环有源保护结构的效率。
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When the sensor is forward biased at a current of 2 mA, the range of positive temperature coefficient of the sensor resistance is extended up to +300 C as a result of the minority current discontinuity and majority carrier injection.
当传感器在2mA的正向偏置电流下，由于少数载流子的不连续性以及多数载流子的注入，传感器电阻的正温度系数区拓宽到573K（＋300℃）以上。
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Its operation depends on the flow of both majority and minority carriers and it has two P-N junctions.
它的工 作依赖于两种载流子，即多数载流子和少数载流子的流动。
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Pertaining to a semiconductor device in which both majority and minority carriers are present.
用于修饰或说明其中既有多数载流子又有少数载流子的半导体器件。
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Also, since the conduction current in MOSFET is formed with feeding through the inversion-layer channel by majority carriers, delay in relation to combination and storage of surplus minority carriers will not occur.
此外，因为MOSFET中的传导电流是通过多数载流子输运通过反型层沟道而出现，与过剩少数载流子的复合和存储相关的延迟不会出现。
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The influence of pulse laser stimulation on minority carrier lifetime measurement is theoretically analyzed.
摘 要：主要从理论上研究脉冲光信号激励对少数载流子寿命测试结果的影响。
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It was a new technique that using I-V characteristic to measure minority carrier lifetime in solar cell base region for finished solar cells.
本文通过对测试少数载流子寿命的各种方法进行分析后提出了一种新的测量成品太阳电池基区少数载流子寿命的方法，这种方法通过分析太阳电池的I-V特性得到基区少数载流子寿命与太阳电池开路电压，短路电流的关系。
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Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon.
通过各种方法(例如向PN结注入少数载流子)扰动导带电子和价带空穴的平衡浓度，致使非平据少数载流于复合而产生光子。
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By taking the effects of Ge fraction and strain on the energy band structure and effective masses into account, the analytical model of the effective densities of states of the conduction and valence bands are proposed, and the temperature and Ge fraction dependence of the effective densities of states are also studied. Following this, the temperature and Ge fraction dependence of intrinsic carrier concentration in strained SiGe layers are analytically calculated. Furthermore, carder freezeout effect and the minority carrier trapping effect of the shallow-level compensated imputities in strained SiGe layers at low temperatures are investigated.
其中，分析了应变SiGe层的临界厚度、能带结构、禁带宽度及禁带变窄模型；在考虑了Ge组份和应力对应变SiGe层能带结构的影响后，给出了较为精确的SiGe应变层的导带和价带有效状态密度的模型，并研究了有效状态密度与Ge组份及温度的变化关系；分析了应变SiGe层的本征载流子浓度及重掺杂下的禁带变窄；讨论了低温下应变SiGe层中的载流子冻析效应，并计算了SiGe应变层的电离杂质浓度与Ge组份及温度的关系；研究了应变SiGe层低温浅能级补偿杂质的陷阱效应；给出了应变SiGe层多数和少数载流子迁移率以及少数载流子寿命模型。
- 更多网络解释与少数载流子相关的网络解释 [注：此内容来源于网络，仅供参考]
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minority carrier：少数载流子
minority carrier 少数载体 | minority-carrier 少数载流子 | minus 负号
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minority carrier：少数载体
minor of determinant 子行列式 | minority carrier 少数载体 | minority-carrier 少数载流子
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minority carrier lifetime：少数载流子寿命
进程生命周期:Process lifetime | 少数载流子寿命:minority carrier lifetime | 正电子放射断层显像:positron emission tomography
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excess minority carrier：过剩少数载流子
excess metal 增强焊波 | excess minority carrier 过剩少数载流子 | excess multiplication factor 超过倍率
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minority carrier injection：少数载流子注入
minority carrier charge storage 少数载流子电荷储存 | minority carrier injection 少数载流子注入 | minority carrier injection controlled FET 少子注入控制场效应晶体管
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Minos pattern recognition machine：米诺斯模式识别机
minority-carrier storage 少数载流子存储 | Minos pattern recognition machine 米诺斯模式识别机 | Minovar metal 米诺瓦合金
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Minos pattern recognition machine：米诺斯模式识别机
minority-carrier storage ==> 少数载流子存储 | Minos pattern recognition machine ==> 米诺斯模式识别机 | Minovar metal ==> 米诺瓦合金