多层薄膜状的

基本解释 (translations)

filmated

与多层薄膜状的相关的网络例句 [注：此内容来源于网络，仅供参考]

An ultra-high strength, weldable, low alloy steel with excellent cryogenic temperature toughness in the base plate and in the heat affected zone when welded, having a tensile strength greater than 830 MPa (120 ksi) and a micro-laminate microstructure comprising austenite film layers and fine-grained martensite/lower bainite laths, is prepared by heating a steel slab comprising iron and specified weight percentages of some or all of the additives carbon, manganese, nickel, nitrogen, copper, chromium, molybdenum, silicon, niobium, vanadium, titanium, aluminum, and boron; reducing the slab to form plate in one or more passes in a temperature range in which austenite recrystallizes; finish rolling the plate in one or more passes in a temperature range below the austenite recrystallization temperature and above the Ar3 transformation temperature; quenching the finish rolled plate to a suitable Quench Stop Temperature; stopping the quenching; and either, for a period of time, holding the plate substantially isothermally at the QST or slow-cooling the plate before air cooling, or simply air cooling the plate to ambient temperature.

在基体板以及焊接时的热影响区处的低温韧性优异的超高强度、可焊接、低合金钢具有高于830MPa（120ksi）的抗拉强度，并且具有包含奥氏体薄膜层和细晶粒的马氏体／下贝氏体板条的显微层状组织，所述钢的制备过程为：加热含有铁以及特定重量百分比的添加元素的钢坯，所述添加元素为碳，锰，镍，氮，铜，铬，钼，硅，铌，钒，钛，铝，以及硼中的一些或全部；在奥氏体可发生再结晶的温度范围内，采用一个或多个道次，将所述钢坯轧制成板材；在低于奥氏体再结晶温度但高于Ar 3 转变点的温度下，采用一个或多个道次对所述板材进行终轧；将所述终轧板材淬火至一适当淬火终止温度；停止所述淬火；或者在空冷前在QST点基本等温保持所述板材一段时间，或者对所述板材进行缓慢冷却，或者只是简单地将所述板材空冷至室温。

The plane-parallel resonant cavity is built up in theory with the U-shaped bending waveguide for TM mode. The beam splitting and convergence effect are also discussed for the structure composed of filling-factor graded wave-like 2D-PC and one-dimensional multilayer thin films.

利用TM模的U型转弯波导构建了新型的平行平面谐振腔，并指出由填充率渐变型波状结构二维光子晶体和一维多层薄膜构成的混合结构在光分束和抑制光束发散方面的作用及其在平行平面谐振腔中的潜在应用。

The structure of the thin film capacitor 1 of this invention is: form sequentially at least the bottom electrode layer 102, the high dielectrics constant oxide film 103 and the upper electrode layer 105 on the semiconductor substrate 101; said upper electrode layer 105 which is a film layer 104 formed by the electrical conductive material which is processable by reactive ion etching, or a multilayered film composed of two kinds of film layers 107 and 108, which are each formed of a conductive material which is processable by at least two kinds of reactive ion etching.

要约 薄膜电容器1是至少在半导体基片101上按顺序形成下部电极层102、高介电常数氧化物膜层103、上部电极层105而构成的薄膜电容器，该上部电极层105由一种仅由可用反应性离子刻蚀加工的导电性材料形成的膜层104，或至少两种由可用反应性离子刻蚀加工的导电性材料分别形成层状的多层膜层107和108构成；经历350℃的热试验之后，对该薄膜电容器1施加OV到2V的驱动电压的薄膜电容器漏电电流密度为1×10 －8 A/cm 2 以下。