基极电流

词组短语

base current

与基极电流相关的网络例句 [注：此内容来源于网络，仅供参考]

IC2 is N1P2N2 transistor base current, it makes its collector current IC1 and emitter current IA increased.

IC2是N1P2N2晶体管的基极电流，它又使得其集电极电流IC1和发射极电流IA增加。

We know that in a transistor operating in its active mode, collector current is equal to base current multiplied by the ratio β.

我们知道，当晶体管工作在放大区时，集电极电流等于基极电流乘以系数β。

We've seen already how maintaining a constant base current through an active transistor results in the regulation of collector current, according to the β ratio.

我们已经看到有源晶体管的恒定的基极电流是如何以系数β控制集电极电流的。

The invention relates to an amplifier circuit containing a high-frequency transistor (1) and having a circuit (2) for adjusting the operating point, which provides a base current for the high-frequency transistor (1) according to the voltage released at a resistor (3) which is connected in the collector ring of the high-frequency transistor (1). The circuit (2) has a differentiating unit (20), fed by the supply voltage, which compares the voltage released at the resistor (3) with a reference voltage.

带有高频晶体管(1)的放大器电路具有一个用于工作点调整的电路(2)，其依赖于在连接在高频晶体管(1)的集电极电路中的电阻(3)上下降的电压为高频晶体管(1)提供基极电流，电路(2)具有一个由供电电压馈电的差分节(20)，其把在电阻(3)上下降的电压与基准电压比较。

It can be seen that besides the realization of the common-emitter gain, thus current amplification, the common-base properties were also improved due to the reduction of the common-base leakage current. We have attributed the improvement of the common-base properties and the realization of the common-emitter properties to the enhancement of the electron injection due to the utilization of the V2O5 interfacial layer.

研究发现，V2O5界面修饰层的引入明显地减小了共基极漏电流，使器件的共基极特性得到了进一步的改善，同时也使器件表现了共发射极特性，实现了电流的放大，我们已经把共基极特性的改善和共发射极特性的实现归功于界面修饰层的引入提高了电子注入的结果。

Because collector current is equal to base current multiplied by β, and emitter current is the sum of the base and collector currents,α should be mathematically derivable from β.

既然集电极电流等于基极电流乘以β，而发射极电流又是基极和集电极电流之和，α当然可以根据β计算出来。

It is found that the utilization of BAlq3/Alq3 isotype heterostructure emitter further reduces the leakage current, leading the BAlq3/Alq3 isotype heterostructure-based devices to higher output current and higher common-emitter gain at the same operational voltage compared to the case of Alq3 as the emitter.

研究发现，同Alq3单发射极层结构的金属基极晶体管相比，BAlq3/Alq3异质结发射极层的使用进一步降低了器件的漏电流，使器件在相同的电压下表现了更高的输出电流和更高的共发射极增益，为进一步实现高性能金属基极晶体管提供了新的方法。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

In our experimental results, we have transferred the GaAs solar cells from GaAs substrates onto the mirror-coated copper substrates with the base layer thickness of 1.5 μm. The photovoltaic performance of the orginal GaAs solar cell on a GaAs substrate was also measured. Under AM1.5G and without anti-reflective coatings conditions, it is found that the Jsc can increase from 12.6 mA/cm2 to 13.82 mA/cm2, while the conversion efficiency can improve from 7.91% to 8.53%. As a result, the enhanced Jsc and η data of the GaAs solar cells can be contributed by the AuGe/Au mirror between the GaAs solar cell and copper substrate.

在实验验证方面，本实验室将砷化镓太阳电池由砷化镓基板转移至铜基板上，在基极厚度1.5 μm、AM 1.5G、以及元件未披覆抗反射膜的条件下，短路电流密度可由12.6 mA/cm2提升至13.82 mA/cm2，增加9.7%，而转换效率则可由7.91%提升为8.53%，这结果显示当砷化镓太阳电池基极底部镀有金属反射层时，的确能适度地提升太阳电池的短路电流密度及转换效率。

Since Al〓Ga〓In〓P possesses larger valence band difference to GaAs and wider energy gap, minor carrier reverse injection from base and space charge region recombination in the emitter are effectively suppressed in Al〓Ga〓 In〓P/GaAs HBT. Under most circumstances, quasi-neutral base recombination current dominates the base current, and its ratio to collector current varies little with collector current and temperature, thus greatly stabilizes the current gain.

Al〓Ga〓〓In〓P/GaAs HBT由于异质结的△Ev较大，发射区禁带较宽，有力地抑制了基区少子反向注入流和发射区空间电荷区复合电流；在大多数情况下，基极电流以准中性基区复合电流为主，其与集电极电流的比值随集电极电流和温度的变化极小，稳定了电流增益。

与基极电流相关的网络解释 [注：此内容来源于网络，仅供参考]

base current：基极电流

其照850nm的雷射光后的Gummel图如(图三)所示,其未照光之基极电流(base current)在VBE>0.5V皆为理想之1kT电流,表示组件之缺陷(defect)很少. 在光电流部份,可以看出基极电流在约VBE=0.85V时变号,这是由于光电流是由集极流至基极,

base current：基极[基部]电流, 基线电流

law office 律师事务所 | base current 基极[基部]电流, 基线电流 | film society 电影协会,电影俱乐部

base current：基极电流, 基线电流

base cover | 药筒盖 | base current | 基极电流, 基线电流 | base curve | 基线

transistor base current：晶体管基极电流

transistor automatic computer 晶体管自动计算机 | transistor base current 晶体管基极电流 | transistor bias circuit 晶体管偏压电路

base current source：基极电流源

基极电流 base current | 基极电流源 base current source | 基本数据 base data

saturation base current：饱和基极电流

saturation base charge 饱和基区电荷 | saturation base current 饱和基极电流 | saturation control 饱和度控制

collector current：集极电流

在光电流部份,可以看出基极电流在约VBE=0.85V时变号,这是由于光电流是由集极流至基极,因此光电流与集极电流(collector current)同向,但与基极电流反向.

cutoff collector current, base-open：基极开路截止集极电流

基射极短路截止集极电流 cutoff collector current, base & emitter shorted | 基极开路截止集极电流 cutoff collector current, base-open | 截止电流 cut-off current

current amplification coefficient：基极 base 电流放大系数

集电极 collector | 基极 base 电流放大系数 current amplification coefficient | 等效电路 equivalent circuit

cut off：截止

1.截止(cut off)状态:如图5所示,当三极管之基极不加偏压或加上反向偏压使BE极截止时(BE极之特性和二极管相同,须加上大于0.7V之正向偏压时才态导通),基极电流IB=0,因为IC=βIB,所以IC=IE=0,此时CE极之间相当于断路,负载无电流.