- 更多网络例句与场效应晶体管相关的网络例句 [注：此内容来源于网络，仅供参考]
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On the other hand, the linear deviations of the active voltage biasing circuit with Bipolar Transistor or FET were at most 7%, and at most 3% respectively.
结果：在阳极电流为50 μA，电阻型光电倍增管偏置电路的线*偏离度已达40%，而用双极*晶体管或场效应晶体管的有源偏置电路的线*偏离度分别为≤7%，≤3%。
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METHODS: On the basis of PMT passive voltage biasing circuit, Bipolar Transistor or Field Effect Transistor were used. Additionally,"adjustable constant current technology" was adopted to avoid the effect of temperature on circuit.
在电阻型光电路倍增管偏置电的基础上，增加双极型晶体管或场效应晶体管构成有源光电倍增管偏置电路；并采用可调恒流技术，以解决温度对电路的影响。
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With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices
非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件
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The present invention relates to one kind of FET with polysilicon source and vertical channel structure and its preparation process.
本发明涉及一种多晶硅作源端的具有垂直沟道结构的场效应晶体管，及它的制备方法。本发明的垂直沟道场效应晶体管，其特征在于用多晶硅作器件的源端。
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The compensation circuit includes a compensation transistor of the same type as the field effect transistor.
所述补偿电路包括一个与场效应晶体管相同型号的补偿晶体管。
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It is the base of hydrogen ion sensitive field effect transistor ,used fluoride sensitive membrane as ISFET gate.
它是在pH2ISFET传感器的基础上用PVC 方法把离子敏场效应晶体管和氟化物敏感膜相结合，制成氟离子敏场效应晶体管。
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A control circuit is connected to the field effect transistor and provides a current through a control current path to produce the field effect transistor input voltage.
控制电路连接到场效应晶体管并提供通过控制电流路径的电流以产生场效应晶体管输入电压。
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And highlights the DNA field effect transistor sensor of the study process, embodies the DNA field effect transistor sensor is small in size, light weight, easy to implement integration features in the development of multiple genes simultaneously testing has irreplaceable advantages.
并着重介绍了DNA场效应晶体管传感器的实验研究过程，体现了DNA场效应管传感器具有体积小、重量轻、易于实现集成化的特点，在发展多基因同步检测方面有着不可替代的优势。
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Furthermore, by using Natori theory on the field-effect transistor we study the current-voltage characteristics of deformed carbon nanotube field-effect transistors. For strain deformation, the conductivity of zigzag nanotube presents different characteristics with the remainder of n and 3. For armchair nanotubes, the conductivity does not change with the strain parameter. However, for torsion deformation, the conductivity rapidly increases, specially for the armchair tube. It has many obviously different conductivity behaviors between zigzag tubes and armchair tubes.
进一步应用场效应晶体管Natori理论模拟计算形变碳纳米管场效应晶体管的电流-电压特性的影响，zigzag碳管根据n 与3的余数关系表现出不同的电流变化趋势，而对于armchair碳管轴向拉伸不改变电流；在扭转形变时，碳管电流急剧升高，特别是armchair管。zigzag和armchair管的电流随扭转角度和外电压行为明显不同。
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The chlorion sensitive field effect transistoris made by a core with two field effect transistors,one as Ref-ISFET by polyimide membrane as Ref-gate,another as Work-ISFETby silver chloride membrane as sensitive gate.
本文采用两个场效应管并联的芯片，在其中一个的栅区以聚酰亚胺膜作为参比膜，另一个的栅区以氯化银膜作为氯离子敏感膜，制成氯离子敏感场效应晶体管。
- 更多网络解释与场效应晶体管相关的网络解释 [注：此内容来源于网络，仅供参考]
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fet：场效应晶体管
[[晶体管]]主要分为两大类:[[双极性晶体管]](BJT)和[[场效应管|场效应晶体管]](FET). [[晶体管]]主要分为两大类:[[双极性晶体管]](BJT)和[[场效应管|场效应晶体管]](FET). [[晶体管]]有三个[[极]];[[双极性晶体管]]的三个极,
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gaas fet：砷化镓场效应晶体管
本文对采用介质谐振器进行稳定的砷化镓场效应晶体管(GaAs FET)振荡器随温度变化而发生的长时间频率漂移从理论和实验两方面作了分析研究. 人们发现,介质材料的稳定性和品质因数有某些限制,另外谐振频率的温度特性是非常合乎线性的.
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gaas fet：砷化镓场效应晶体管arX中国学习动力网
gaas 砷化镓arX中国学习动力网 | gaas fet 砷化镓场效应晶体管arX中国学习动力网 | gaas laser 砷化镓激光器arX中国学习动力网
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sb fet：肖特基势垒栅场效应晶体管
sawtooth pulse 锯齿波脉冲 | sb fet 肖特基势垒栅场效应晶体管 | sbc 标准埋层集极
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dmes fet：耗尽型肖特基场效应晶体管
divider 分配器 | dmes fet 耗尽型肖特基场效应晶体管 | dmnos structure dmnos结构
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dmes fet：耗尽型肖特基场效应晶体管WcF中国学习动力网
divider 分配器WcF中国学习动力网 | dmes fet 耗尽型肖特基场效应晶体管WcF中国学习动力网 | dmnos structure dmnos结构WcF中国学习动力网
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field effect transistor：场效应晶体管
※ 场效应晶体管 场效应晶体管(field effect transistor)利用场效应原理工作的晶体管. 英文简称FET. 场效应就是改变外加垂直于半导体表面上电场的方向或大小,以控制半导体导电层(沟道)中多数载流子的密度或类型. 它是由电压调制沟道中的电流,
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FET Field Effect Transistor：场效应晶体管
FES Flash Evaporator System 快速蒸发系统 | FET Field Effect Transistor 场效应晶体管 | FF Front Engine Front Drive 前置发动机前轮驱动
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junction field effect transistor：结面型场效应晶体管
junction field effect transistor 面结型场效应晶体管 | junction field-effect transistor 结面型场效应晶体管 | junction figure 接合投影
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photo field effect transistor：光控场效应晶体管
photo fet 光控场效应晶体管 | photo field effect transistor 光控场效应晶体管 | photo field emission 光场致发射