- 更多网络例句与吸收电流相关的网络例句 [注：此内容来源于网络，仅供参考]
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In most systems involving TTL the fan-out will be limited by the sink current, but in CMOS systems the node capacitance is likely to be the limiting factor.
对于绝大多数的 TTL 电路，扇出能力是由吸收电流决定的。对于 CMOS 电路而言，扇出能力则是取决于节点的电容。
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A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.
二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。
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Current absorption I_a was measured in-situ to understand the mech...
通过吸收电流Ia的实时测试，评价了氧环境的荷电补偿效果。
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Due to the high efficiency switching power supply, generally 80% or more, so the choice of the output current should be accurately measured or calculated maximum absorption current electrical equipment, so be selected with switching power supply with high cost performance.
因开关电源工作效率高，一般可达到80%以上，故在其输出电流的选择上，应准确测量或计算用电设备的最大吸收电流，以使被选用的开关电源具有高的性能价格比。
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Various related information, inclduing minor image appearance conditions, changes in surface potential E, and the absorption current I during appearance of the electron mirror, was studied.
研究了电子镜出现的条件，监测了电子镜像出现过程中表面电势E和吸收电流I的变化。
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The mechanisms of slow polarize relaxation come from the diffuse of space charges and traps,it is absorption current in the macroscopic.
慢极化弛豫机构来源于空间电荷和缺陷的扩散，宏观表现为吸收电流，用时域微分谱可解释这一结
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The mechanisms of slow polarized relaxation come from the diffusion of space charges andtraps,it is absorption current in the macroscopic.
慢极化弛豫机构来源于空间电荷和缺陷的扩散，宏观表现为吸收电流，用时域微分谱可解释这一结果。
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Various related information,inclduing mirror image appearance conditions,changes in surface potential Es,and the absorption current Ia during appearance of the electron mirror,was studied.
研究了电子镜出现的条件，监测了电子镜像出现过程中表面电势Es和吸收电流Ia的变化。结果表明，当Es达到7 kV-9 kV时出现了电子镜像。
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For brighter displays the cathodes need more sinking current.
对于光明显示阴极需要更多的吸收电流。
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The principle of the novel single-phase hybrid active power filter is described in detail. Based on the above analysis, Kalman filtering approach for estimation of harmonics is presented to improve the speed and precision of harmonic detection, and it also can avoid the influence made by voltage distortion on harmonic detection. A new current control strategy based on energy balance is presented to regulate the active part absorbing or releasing active power and control the inverter to produce current opposite to the harmonic current reflowing in injection branch, the above method combined with harmonic current tracking control that keeps the stabilization of dc-side voltage and improve the reliability of the system.
并详细分析了系统的滤波原理，提出了基于卡尔曼增益自调整的改进型动态谐波含量估计方法，能够快速准确的跟踪检测电网谐波电流，并且克服了电力机车等冲击性负荷引起的电网电压畸变对谐波检测精度的影响；提出了基于逆变器两侧能量平衡的电流控制方法使有源部分吸收或释放一定有功或无功功率及产生与注入支路回灌谐波电流相反的抑制电流，然后联合电网谐波电流跟踪控制以获得系统参考信号，保证了直流侧电压的稳定，提高了装置可靠性，增强了系统滤波性能。
- 更多网络解释与吸收电流相关的网络解释 [注：此内容来源于网络，仅供参考]
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absorbefacient：吸收剂
absorbed current amplifier 吸收电流放大器 | absorbefacient 吸收剂 | absorbent bandages 脱脂绷带
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absorption index,AI：吸收指数
"吸收电流","absorption current" | "吸收指数","absorption index,AI" | "摘要,抽象","abstract"
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absorbed current amplifier：吸收电流放大器
absorbance monitor 吸收度监测器 | absorbed current amplifier 吸收电流放大器 | absorbefacient 吸收剂
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absorption current：吸收电流
吸收电路 absorbing circuit | 吸收电流 absorption current | 吸收率 absorption factor
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absorption current：吸收电流(非完全介质中)
paroccipital 枕骨旁部(的) | absorption current 吸收电流(非完全介质中) | hereditary basis 遗传基础
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absorption current：吸收电流(非完全介质中的)
absorption cross-section 吸收断面;吸收截面 | absorption current 吸收电流(非完全介质中的) | absorption current of dielectric 介质吸收电流
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reversible absorption current：可逆吸收电流
reversible 可逆 | reversible absorption current 可逆吸收电流 | reversible cell 可逆电池
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reversible absorption current：反向吸收电流
reversibility principle ==> 微观可逆性,可逆性原理 | reversible absorption current ==> 反向吸收电流 | reversible addition reaction ==> 可逆加成反应
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absorption current of dielectric：介质吸收电流
absorption current 吸收电流(非完全介质中的) | absorption current of dielectric 介质吸收电流 | absorption curve 吸收曲线
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absorbance monitor：吸收度监测器
absorbable stanching satin 吸收性止血绫 | absorbance monitor 吸收度监测器 | absorbed current amplifier 吸收电流放大器