受主掺杂

词组短语

acceptor doping

与受主掺杂相关的网络例句 [注：此内容来源于网络，仅供参考]

With the Eu doping level increased to more than 1mol%, the content of B-site occupancies is increased and acceptor doping is to be dominant.

当Eu含量低于1mol％时，Eu在PZT晶格中主要占A位，起施主掺杂作用；随着Eu含量的增加，其在PZT晶格中占据B位的比例逐渐增多，受主掺杂作用逐渐增强。

It was shown that the improvement of electric properties in 1%Eu-PZT can be attributed to Eu donor doping, which decreases the concentration of defects such as oxygen vacancies and holes, while the degradation in fatigue and leakage current properties shown in the films with more than 1mol% Eu dopant results from the apparently dominant acceptor doping, which increases the concentration of oxygen vacancies and holes.

结果表明，1mol％Eu施主掺杂，可以减少氧空位以及空穴等缺陷浓度，因此1％Eu-PZT薄膜的极化疲劳和漏电流特性得到明显改善；高于1mol％Eu的受主掺杂作用使薄膜中氧空位以及空穴等缺陷浓度增加，导致PZT薄膜电学性能恶化。

In the research of prescription, through the experiments we knew the influence from the Nb_2O_5 or Y_2O_3 single donor doped on high-temperature PTC ceramic, and got the curve graph drawing the resistivity and mixing quantity. In order to restrain lead volatilize and mix the rang of donors to neutralization the harmful acceptor impurity in raw materials, adopt the prescription design of Nb_2O_5 and Y_2O_3 double donors-doped. From the result, we know that regulation proportion of Nb , Y double donors, can make high-temperature PTC ceramics semiconducting, the pottery demonstrates good electric performance.

为了能够更有效的抑制铅挥发，并且使掺杂范围能够更好的调节，以"中和"原材料中的有害受主杂质，在配方设计中采用了Nb_2O_5和Y_2O_3双施主掺杂的配方，由结果可知，适当的调节Nb、Y双施主掺杂总量及Nb、Y掺杂比例，可以使高温PTC陶瓷充分的半导化，陶瓷表现出良好的电性能。

Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.

选择同质或者异质的基质材料；在基质材料上外延生长形成变换叠加的垒层和阱层，在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质，得选择超晶格位置掺杂的p型III族氮化物材料，其中，每个生长周期的步骤为：生长带隙较宽的垒层，同时掺入受主杂质；生长施主杂质或受主杂质δ掺杂层；生长非掺的带隙较窄的阱层；生长受主杂质或施主杂质δ掺杂层；在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火，即得目标产物。

Controlled concentrations of specific donors or acceptors may be intentionally added into materials to form extrinsic semiconductor using various techniques.

控制特定施主和受主原子的浓度，进而运用各种方法能动地填加，这种在半导体材料中加入合金成分的过程称为掺杂。

The study of acceptor Ga open-tube diffusion in SiO2/Si has been carried for several decades, whose pursuing was only to get the diffused surface of high uniformity and reproducibility and impurity distribution in Si which can improvethe electrical performance of the devices, but the various manifestation of Ga segregation effect at the SiO2-Si internal interface and the dynamic intendancy of the impurity concentration variability have not been reported.

关于受主杂质Ga在SiO_2／Si系统进行开管掺杂的研究已有几十年的历史，研究的内容与追求的目标主要集中在如何获得高均匀性、重复性的扩散表面和提高器件电学性能的硅体内杂质分布形式，而对Ga在SiO_2-Si内界面上分凝效应的各种表现，以及由此造成的近硅表面杂质浓度动态变化趋势尚未见报导。

In group-V elements, the calculated acceptor ionization energy of N is 0.31 eV, which is much smaller than that of P (0.77 eV) and As (0.89 eV), and the acceptor formation energy of N is lowest among them.

在Ⅴ族元素当中，计算出N的受主电离能为0.31eV，远小于P(0.77eV)和As(0.89eV)，并且N的受主形成能在这三种元素当中也是最小的，因此可以说N是Ⅴ族元素中比较理想的p型掺杂元素。

But the grain growth, grain semiconduction and grain boundary insulation were influenced by many factors, such as the type and contents of dopants, sintering temperature and so on. Therefore, in this thesis the effect of the restore sintering temperature, the oxygenize temperature, the donor and acceptor dopant on the dielectric and varistor properties of devices were studied. With SEM, the microstructure of SrTiO3-based double function ceramic was analyzed.

而晶粒生长、晶粒半导化和晶界绝缘化受到多种因素的影响，诸如杂质的种类和含量、烧成温度等，因此本论文研究了还原烧成温度、中温氧化温度、施主和受主掺杂等对SrTiO_3基陶瓷的压敏和介电性能的影响，并借助于SEM分析对SrTiO_3基双功能陶瓷的微观结构进行了分析。

The association defect formed by donor and acceptor was the obstacle of the electromigration of the Oxygen vacancy and the electron. The valence variation of MnO〓 during the sintering and reoxidation process can improve the insulation resistance effectively.

要发挥MgO受主掺杂的作用，同时要避免氧空位的增加。Y〓和Dy〓作为两性离子掺杂，减少了氧空位，产生的施主和受主相互缔合，成为氧空位和电子迁移的障碍。

Secondly, the energy band structure of codoped-TiO2 shows that an acceptor level and a donor level present inside the band gap, and an electron on the donor level passivates a hole on the acceptor level, so the systems still keep semiconductor character and enhance the separation of electron-hole pairs excited by photo irradiation.

另外， V： N共掺杂TiO2的能带结构表明：导带底下方施主杂质能级上的一个电子刚好补偿价带顶上方受主杂质能级上的一个空穴，使掺杂后TiO2材料表现出半导体的显著特征，这有利于电子—空穴对的分离，提高量子产率。

与受主掺杂相关的网络解释 [注：此内容来源于网络，仅供参考]

acceptor doping：受主掺杂

abundance 丰度 | acceptor doping 受主掺杂 | acceptor impurity 受主杂质

acceptor：受主

3.4.2 受主(acceptor)掺杂材料 3.5 热平衡状态的PN结 3.6 施加正向偏置电压的PN结 3.7 反向偏置二极管 3.8 理想二极管方程 3.9 二极管内的电荷存储 3.10 正向偏置二极管内的电荷存储 3.11 双极性二极管的反向恢复 3.12 反向击穿 3.13 二极管数据手册 3.14 肖特基二极管 3.15 本章习题 3.16 参考文献第4章 双极性晶体管模型

donor：施主

3.4.1 施主(donor)掺杂材料3.4.2 受主(acceptor)掺杂材料既然我们还是生活在数字处理越来越普及的现实世界,那么模拟设计者也必须熟悉数字处理的概念,使得我们可以在模拟处理与数字处理之间相互协作.