发光性的

基本解释 (translations)

luminiferous

与发光性的相关的网络例句 [注：此内容来源于网络，仅供参考]

However, in this paper, the crystal was grown with Bridgman method and under non-vacuum condition.

研究了用非真空铂坩埚下降法生长的CsI晶体的在紫外和γ射线激发下的光致发光和光衰减特征，探索了CsI晶体的发光强度和发光不均匀性与Tl离子含量和分布之间的关系以及改善晶体发光均匀性的措施。

AbstractA novel form of luminescence, solid state cathodoluminescence was discovered when certain organic materials were employed as the active layer in an optimally designed scheme. In this paper we recount the history of the discovery of SSCL, identification of the experimental phenomena, investigation of its universal characteristics, and its potential development.

通过分层优化方案，采用有机场致发光材料，发现了一种新的激发发光方式，即固态阴极射线发光(solid state cathodoluminescence，简称SSCL)，文章主要介绍了固态阴极射线发光的发现历史、发光现象的辨认、发光现象的普适性考察以及其良好的发展前景。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

The process of both photoluminescence and electroluminescence,and the property of photoluminescence and electroluminescence on polysilane were introduced.

介绍了光致发光和电致发光的过程及聚硅烷的光致发光和电致发光性的研究进展。

To examinate the thermal properties by TGA、DSC and figure out the maximum decompose temperature which survey the range of liquid crystal temperature. We synthesize conjugated polymer successfully and these emitted blue fluorescence. Hope this experiments will supply well-contribution in field of organic light-emitting diodes.

以TGA、DSC测定其热性质，并了解到由TGA的5%热重损失温度再进行测出液晶温度范围，我们成功的合成出具有良好的加工性的共轭性分子，发光性质都出现在蓝光领域，愿在有机发光二极体的领域上有重大的贡献。

On the research work of the relationship of different configurations of hot cathode and its thermal electron emission density, the area source which can emit uniform electrons is designed.

首先，围绕荧光屏发光亮度均匀性，在分析微光像增强器荧光屏的发光特性及性能参数测试技术的基础上，提出测试荧光屏发光亮度均匀性的方法。

Introducing the optical microcavity into OLEDs, we can change the spectra, narrow the spectral width, obtain good homochromatic light-emission and also the light-emitting efficiency can be enhanced.

在有机电致发光器件中引入光学微腔，可以改变有机电致发光器件的发光光谱，窄化光谱宽度，获得单色性好的发光，提高器件的发光效率。

The number and intensity of peaks of the thermoluminescent cutves are obviously related to stages of gold mineralization:the curve of the early barren quartz shows nearly Symmetric pattern; that of the major stage auriferous quartz is of multimodal type; the curve of the late quartz, low in gold, is marked by unimodal--bimodal type with rather intense luminescence.

石英热发光曲线的发光峰的数量和强度与金成矿阶段有着明显的关系：早期成矿阶段结晶的基本不含金石英，热发光曲线常为近对称的单峰型，发光强度较大；主成矿阶段形成的含金石英，热发光曲线为多峰型，常具最大的发光强度；晚期成矿阶段生成的含金性较差的右英，热发光曲线呈单峰-双峰型，发光强度亦较大。

Based on study of the thermoluminescent features of q uartz from vein No.505 and No.530 in Wenyu gold deposit,the value 10 000CPS for total thermoluminescent intensity and 150CPS for thermoluminescent peak strength of quartz were proposed as quantitative indicators to evaluate the auriferous f eature of quartz veins.According to this criteria,mapping of thermoluminescent intensity of quartz on limited parts of vein No.505 and vein No.530 were carried out,and conclusions that the deep parts beneath the e...

在对文峪金矿床505、530脉石英矿物热发光特征研究基础上，提出了以石英热发光总强度1000CPS，峰强150CPS为评价石英脉含金性的定量判别标志；根据上述准则，开展了505及530脉局部范围的石英热发光强度填图工作，并得出了505脉13中段及530脉10中段在现在矿体深部仍有较好成矿前景的结论，为脉型金矿床深部成矿远景评价提供了新的途径。

The methods are based on the direct CL reaction of epinephrine with luminol in the presence of potassium ferricyanide and potassium ferrocyanide in alkaline solution or based on the inhibitory effect of paracetamol on the luminol-potassium ferricyanide CL reaction.

人们普遍认为具有不变价态的第二主族元素（碱土金属 Mg》，Caf&，STz&和 B／离于）在通常条件下既没有氧化还原性，也没有催化活性，因而一般认为它们即没有基于氧化还原性的化学发光行为，也没有基于催化活性的化学发光行为。

与发光性的相关的网络解释 [注：此内容来源于网络，仅供参考]

jacquard weave：提花

一种具有层次感发光效果的提花(jacquard weave)结构,其包括:一个以上不透光线条、一个以上挠性透光线条、及一发光模块. 其中,该等挠性透光线条分别与该等不透光线条相互穿插排列,以使得一部分的挠性透光线条被该等不透光线条所遮蔽,

LM：流明

随着科技的发展和进步,发光二极管(LED)因为其耐用性、低耗性,逐渐替代了灯泡,我们现在手电的LED,一般的驱动电压是3.7V(也就是锂电的电压),用"流明"(LM)来说明发光体的亮度,目前单体发光的可以到200LM,远远超过电胆的几十LM量,

noctilucence：夜(磷)光,生物(性)发光

noble opal 贵欧泊,贵蛋白石 | noctilucence 夜(磷)光,生物(性)发光 | noctilucent 夜光的,夜间(黑暗中)发光的

photogenic：发光的,光源性的

photogenerator 光电信号发生器 | photogenic 发光的,光源性的 | photograph 照片,照像

self-luminosity：自发光性

self-locking 自锁定 | self-luminosity 自发光性 | self-luminous 自发光的

self-luminous：自发光的

self-luminosity 自发光性 | self-luminous 自发光的 | self-luminousbody 自发光体

tritium：三重氢

但是这种情况只有在特殊的订单要求之下才有. 镶嵌有钻石的表款统一归为Manupropria系列. Angular Momentum手表当中使用了一种全新的发光材料Super-LumiNova,这种发光材料的发光性比常用的三重氢(Tritium)的发光性要高出100倍.

luminiferous：发光性的

luminescent 发冷光的 | luminiferous 发光性的 | luminometerphotometer 光度计

luminiferous：发光的,发光性的,光辉的

luminosity 光明,光辉;发光体;[物]发光度 | luminiferous 发光的,发光性的,光辉的 | luminesce 发冷光; 无热发光

presocial：社會性

昆虫的发光(insect bioluminescence)有两种情况,一类是由于发光细菌的存在;另一类是昆虫自身的发光,通常所说的发光昆虫即指此类. 但很多学者为了实用的方便,把除孤独性和真社会性以外的昆虫通称为前社会性(presocial)昆虫.