双极的

基本解释 (translations)

bipolar  ·  diplolar

与双极的相关的网络例句 [注：此内容来源于网络，仅供参考]

This study is to translate Angst's Hypomania Check List-32 item into Chinese, and a total of 400 cases will recruited into 4 groups: bipolar I, bipolar II, unipolar depression and normal control, 100 cases in each group. Reliability and validity will be analyzed, and the cut-off scored will be established to assist the clinicians in correct diagnosis.

本研究拟翻译由Angst等人(2005)所编制的32项目轻躁症状自评量表(Hypomania Check List-32 item， HCL-32)，取样单极型忧郁症患者、第一型双极症患者、第二型双极症患者与社区正常控制组各100名，进行此量表之信、效度等计量分析，并建立筛选标准值(cut-off point)，以协助临床工作者对双极症患者的正确诊治。

In addition, we use plane wave method to describe the reciprocal symmetry in both optics and quantum mechanics.

最后我们进一步应用格林函数方法去处理在近场光学里的问题，并考虑源为电双极的型式，且讨论两种不同的系统。

Having properties of both a solid and a liquid, Liquid crystal consists of rod-shaped bipolar molecules which are capable of twisting polarized light when in the "off" state.

有固体和一种液体的特性，液晶由杆形成的双极的分子组成当在关态里时，能缠绕偏振光。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

Histologically, it was composed of plump and long bipolar, spindle cells arranged in fascicular clusters with intervening broad collagen bands.

组织学上，它的组成是双极的梭状细胞成束状排列，中间夹杂有不等残的胶原纤维。

In order to study the overvoltage caused by monopolar grounding fault under bipolar mode in Ultra High Voltage DCsystem,the paper analyzes the monopolar grounding fault by use of phase-modal transformation method.

为研究双极运行的特高压直流输电系统中单极接地故障过电压，采用相模变换法分析了双极运行的特高压直流输电系统单极接地故障。

The possible reason is that doped Zr〓 ion enters the interstitial sites for its small ionic radius and no dipole complexes were formed. Monovalent ion F〓 has been reported to improve the scintillating performance greatly. Our results show that Agrand diagrams of F〓: PWO crystals obey an modified Cole-Cole equation. The crystals present similar dielectric relaxation phenomena to but have much higher activation energy than that of RE〓: PWO crystals, which originate from the 〓 dipole complexes. The co-doping of trivalent Y〓 and pentavalent ion Nb〓 does not always show a better scintillation performance than that of solely doped samples, which could be attributed to the existence of the 〓 dipole complexes, which counteract the solely doping effect.

而Zr〓由于离子半径太小，可能进入间隙位置，不形成类似的偶极缺陷；一价负离子F〓的掺入提高了晶体闪烁性能，阻抗谱测试结果表明F〓：PWO晶体Argand图符合修正的Cole—Cole方程，晶体同样表现出介电弛豫现象，并具有比RE〓：PWO晶体中高得多的弛豫激活能，可能起源于形成的〓偶极缺陷；Y〓和Nb〓双掺的PWO晶体并没有显示出两种离子单掺优点的叠加，阻抗谱测量结果表明，在双掺晶体中可能形成〓偶极缺陷，使两者掺杂作用相互抵消。

Facing these problems, the half-coupled conservation laws of energy for polar continua, conservation law of energy and Hamilton principle for micropolar multifield theories, principle of virtual velocity and dipolar velocity as well as of virtual stress and dipolar stress for solids with microstructure are proposed.

针对这些问题，提出了半耦合型的极性连续统能量守恒定律、微极多场耦合理论能量守恒定律和Hamilton原理与带有微结构的固体理论的虚速度和虚双极速度以及虚应力和虚双极应力原理等。

It is very important in improving the accuracy of demarcating the reservoir boundaries.

它对提高井中垂直双极源圈定储层范围的精度有着非常重要的意义，同时也为井中垂直双极源三维反演问题奠定了基础。

It is very important in improving the accuracy of demarcating the reservoir boundaries. Also 3D inversion of borehole vertical bipole will base on it.

它对提高井中垂直双极源圈定储层范围的精度有着非常重要的意义，同时也为井中垂直双极源三维反演问题奠定了基础。

与双极的相关的网络解释 [注：此内容来源于网络，仅供参考]

bipolar：双极

在法理学家富勒的笔下,法院并不适合去解决这样一个并非"双极"(bipolar)而是"多中心"模型的争端. (6)(P60-61)第三,法院即使判决规制标准无效,或者对规制标准提出了附加的程序要求,但是它必须有能力强制行政机关或者企业遵守其判决.

bipolar：双极型

在20世纪70年代末期,双极型(bipolar)晶体管技术已经成为领导潮流的数字电子技术. 在1980年前后,通过多年的奋起直追,MOS技术才终于扭转了这一局势,并且当时在双极型晶体管技术和MOS共用技术之间存在着交叉的现象. 随后科学家们发现,

bipolar transistor：双极晶体管

比较与之不相同的"双极晶体管"(bipolar transistor). 动圈式唱头(moving-coil cartridge) 指相对于固定磁场作运动而产生信号的唱头. 动圈式(MC)唱头的输出较低,使用时需配以专门的唱头放大器.

bipolar transistor：双极型晶体管

占空比(Duty Cycle)在电信领域中有如下含义: 在一串理想的脉冲序列中(如方波),正脉冲的持 ..双极型晶体管(Bipolar Transistor) 由两个背靠背PN结构成的具有电流放大作用的晶体三极管 ..

bipolar transistor：双极电晶体

当初做的积体电路非常简单,只用了六个元件,是一个基本的正反器(flip flop),包括了四个双极电晶体(bipolar transistor)和两个电阻. 用新的名词来说,就是静态随机存取记忆体(static random access memory,简称SRAM). 从那一年开始,

Bipolar field：双极磁场(电机的)

bipolar electrode | 双极电极 | bipolar field | 双极磁场(电机的) | bipolar integrated circuit | 双极集成电路

birefraction：双折射 bistable 双稳态的,双稳器

bipolar 双极的 | birefraction 双折射 bistable 双稳态的,双稳器 | bistable circuit 双稳电路

bipolar nerve cell：双极神经细胞(元)

\\"双极的\\",\\"bipolar\\" | \\"双极神经细胞(元)\\",\\"bipolar nerve cell\\" | \\"双极神经母细胞\\",\\"bipolar neuroblast\\"

binodal：双节的

binodal curve 双结点曲线 | binodal 双节的 | binode 双结;双阳级;双屏极管;双阳极的

binode：双结;双阳级;双屏极管;双阳极的

binodal 双节的 | binode 双结;双阳级;双屏极管;双阳极的 | binode-system 双阳极法