- 更多网络例句与双态元件相关的网络例句 [注：此内容来源于网络，仅供参考]
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Optical digital computer is the core components of optical bistable devices.
光数字计算机的核心元件是光学双稳态器件。
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This paper is based on N-type MOS-HBT-NDR circuit to design a new type of logic gate circuits, The use of a monostable-bistable transition logic element logic gates to realize the principle of operation,,and NMOS devices to control the input stage circuit NDR circuit switching action, And the overall modulation circuits I-V characteristic curve.
中文摘要此篇论文是以N型MOS-HBT-NDR电路来设计新型逻辑闸电路，利用单稳态-双稳态传输逻辑闸(monostable-bistable transition logic element，MOBILE)电路的操作原理来实现，并以 NMOS元件来控制输入级电路中NDR电路的开关动作，进而调变整体电路的I-V特性曲线。
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The method utilizes an optical device which consists of polarization control elements and polarization beam splitting pieces for realizing the multi-switching of polarization or non-polarization light; in a position sequence, one polarization beam splitting piece is arranged on a main optical path at the back surface of each polarization control element, thereby commonly constituting a 'single-pole double-throw' optical switch with a controller; the controller changes the polarization state of input light beams by driving the polarization control elements according to the control logic, and the input light beams are switched to any one path on an output channel through the polarization beam splitting pieces, thereby completing the designated optical information processing function.
利用偏振控制元件和偏振分束片两种光学元件组成的光学装置实现偏振或非偏振光的多路切换；在位置序列上，每个偏振控制元件后面主光路上放置一块偏振分束片，并和控制器共同构成一个'单刀双掷'光开关；控制器按照控制逻辑驱动偏振控制元件改变输入光束的偏振态，并通过偏振分束片将输入光束切换到输出通道上的任何一路，来完成指定的光信息处理功能。
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There are two parts in this thesis. Part I focuses on the transient effect in InGaP/GaAs hetero-junction bipolar transistors. Part II focuses on the P memory effect and buffer-layer-quality determination using C-V measurement in AlGaAs/GaAs pseudomorphic high-electron-mobility transistors. The characterization of hydrogen passivation for InGaP HBTs grown on semi-insulating GaAs substrates is studied. The transient effect caused by hydrogen passivation results the current gain ?
本论文分两部分，第一部份讨论在磷化铟镓的异质接面双载子电晶体中，由於氢的包覆效应产生的特性之研究，由於氢在此种元件中所造成的载子包覆现象是引起电流增益增加的暂态现象的主要原因，本论文提出一个计算氢包覆比例的模型，并与SIMS量测的结果相比对，经过几次热回火处理，此种暂态效应可以被消除。
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In the results of the optical properties, these molecular monomers have different HOMO and LUMO energy gap such that there are dual-emission and energy transfer mechanism in solution fluorescence spectrum. In the study of the electrochemical properties, various of triphenylamine derivaties have different oxygen binding site and they make elecropolymerization happen or not. In the applications of the hole-transport materials, the performance of compound 21 is better than other compounds. The electropolymerized-film may have residual cation molecules so they can increase the concentration of hole-transport. Due to this reason , compound 21 is suitable to become hole-transport materials.
在光学研究方面，由於目标化合物内单体的HOMO及LUMO能阶差异，使得在溶液萤光放射上有双发射及能量转移的情形发生；在电化学研究方面，不同的三苯胺衍生物由於氧基的位置不同，使得取代基在间位的化合物有不错的电聚合效果；而元件的应用上，具有咔唑基团的化合物21由於在形成电聚薄膜后，可能有残余的阳离子态化合物，使得电聚薄膜内的电洞数浓度较高，因此与其他元件相比之下，有较低的启动电压和不错的元件效率。
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An improved and novel magnetic element (10; 10'; 50; 50'; 80) including a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field.
一种改进且新颖的磁性元件(10；10'；50；50'；80)，它含有许多薄膜层，其中单元端部静磁退磁场将抵消这种结构的全部正耦合以在零外磁场下获得双磁态。
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Additionally disclosed is a method of fabricating a magnetic element (10) by providing a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields of the thin film layers cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field.
另外还公开了一种通过提供多个薄膜层来构成一种磁性元件(10)的方法，其中单元端部静磁退磁场将抵消这种结构的全部正耦合以在零外磁场下获得双磁态。
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We report an organic bistable memory made of single organic layer embedded the ITO-structure and the Al electrode. And, we also fabricate the same device that interposes the inner metal film, Al. We compare with two kinds of OBDs.
主要的元件结构为在ITO玻璃基板跟铝电极中，嵌入一层有机发光材料Alq3，此元件具有发光和双稳态的两种特性；之后制作另一种结构的元件，在有机材料层中嵌入一层铝金属层。
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In addition, an effect to enhance immunity against noises and reduce the radiated emission and mode conversion of the filter by twisting positive and negative pair is described. Finally, an equivalent circuit model is described and circuit parameters extracted illustrate the effects of routing topologies and structural parameters on filter's performance.
之后再将无遮蔽双绞线结构以多层板的方式实现，设计出一双绞线式的多层共模滤波器，增加元件抵抗杂讯的能力和减少自身辐射及模态转换所产生的干扰现象，最后利用等效电路来诠释这三种不同结构的特性表现，分析改变结构对电路参数所带来的影响。
- 更多网络解释与双态元件相关的网络解释 [注：此内容来源于网络，仅供参考]
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binary element：双态元件
binary dump 二进制转储 | binary element 双态元件 | binary eluent 二元洗提液
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binary element：二进位单元双态元件
binary digital decoder 二进制译码器 | binary element 二进位单元双态元件 | binary flip-flop 二进制触发器
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binary logic element：双态逻辑元件
binary loader | 二进制装入程序 | binary logic element | 双态逻辑元件 | binary logic module | 二进制逻辑微型组件
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bistable multivibrator：双稳多谐振荡器触发器
bistable element 双稳元件 | bistable multivibrator 双稳多谐振荡器触发器 | bistable storage 双稳态存储器
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bistable device：双稳态装置
bistable circuit 双稳态电路 | bistable device 双稳态装置 | bistable element 双稳态元件
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bistable device：双稳器件
bistable circuit 双稳态电路 | bistable device 双稳器件 | bistable element 双稳元件
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bistable device：双稳态器件
bissuti 比萨蒂细平布 | bistable device 双稳态器件 | bistable element 双稳态元件
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bistable element：双稳态元件
bistable device 双稳态装置 | bistable element 双稳态元件 | bistable fluid amplifier 双稳态射流放大器
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bimorph memory cell：双态存储元件
bimolecular collision 双分子碰撞 | bimorph memory cell 双态存储元件 | bin activator 料斗抖动器
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toggle joint：双态元件,触发器;(乒乓)开关;轮转,(来回)切换
tip尖头,技巧,端头,触点;忠告,提示 | toggle joint双态元件,触发器;(乒乓)开关;轮转,(来回)切换 | tolerance公差,容差[限,许],允许误差;容错度