势垒

词组短语

potential barrier · voltage barrier

与势垒相关的网络例句 [注：此内容来源于网络，仅供参考]

It is still needed to do some work to determine the deformation parameter β2 for light odd-odd nucleus, like 6Li and to calculate all reaction channels by means of CDCC code simultaneously. It is important to measure the exclusive angular distributions of breakup fragments.In theory, the coupling channel equations have been deduced from one-dimensional to multi-dimensional barrier tunneling. The couplings between the entrance channel and the other channels have appreciable effects on sub-barrier fusion cross section. Instead of single fusion barrier,these couplings lead to a distribution of fusion barrier Dfus.

描述了已有理论，从简单的一维势垒穿透模型出发，引入多维势垒穿透和耦合道模型，证明入射道相对运动与碰撞核各种自由度的耦合导致熔合势垒的劈裂，较低的势垒有利于垒下熔合截面增强；给出了从熔合激发函数抽取势垒分布及从背角准弹激发函数抽取势垒分布的理论依据，以及它们的优缺点。

The quasi-elastic barrier distribution D〓 extends to low energy region and enhances the fusion cross section at the sub-barrier energies. It is still needed to do some work to determine the deformation parameter β〓 for light odd-odd nucleus, like 〓Li and to calculate all reaction channels by means of CDCC code simultaneously. It is important to measure the exclusive angular distributions of breakup fragments.

得到参数化的和能量相依的相互作用势公式；发现弱束缚核〓Li+〓Pb阈异常与〓Li的形变参数β〓相关，垒下存在强的吸收势；给出破裂对熔合截面的影响在垒上压底垒下增强；熔合势垒分布向低能端展宽，有利于垒下熔合截面增强等结果；对如何确定轻的奇-奇核的形变参量β〓提出了疑问；需解决如何用从弹散角分布抽取的光学势参数，进行CDCC程序全反应道统一描写；迫切需要破裂碎片关联测量的实验数据。

In order to understand the energy dependence of the dynamical barrier, we pay a great attention to study the neck formation and shape deformation during the dynamic lowering of the barrier.

为了进一步理解动力学势垒的能量依赖，研究了颈部的形成和体系的动力学形变，发现这是促使动力学势垒降低的主要原因。

The experimental results indicate a luminescence enhancement effect of hydrogen by passivating certain defects in GaN. However, such effect must be realized by overcoming high migration barrier in GaN. In the experiments, low energy electron beam supports enough energy to hydrogen to diffuse and passivate defects in GaN.

研究表明氢原子在GaN中可以钝化缺陷来增强发光，但这种钝化缺陷的作用必须通过克服高的扩散势垒来实现，而低能电子束可以提供足够的能量使得氢原子克服扩散势垒来实现钝化作用。

The standard interfacial potential barrier can be used as an index to describe the frictional performance of material due to its independency and stability.

研究表明，界面的摩擦磨损性能取决于接触界面势垒的大小和分布，用标准接触界面势垒作为表征摩擦副材料摩擦磨损特性的指标具有较好的独立性和稳定性。

Using STM, the change of the image contrast of local potential barrier is studied for different kinds of materials on the sample surface, and it is put forward to apply local potential barrier to view different surface materials.

利用STM研究了样品表面成分不同时局域势垒图象的衬度变化，提出了用局域隧道势垒观测表面不同材料的方法。

The formation of hexagonal island will reduce the decay rate of top layer island into the low layer island.

计算结果表明吸附原子的扩散势垒与其所在表面所属台阶类型有关；Ag原子在交换机制和跳跃机制下扩散需克服的势垒分别是0.64eV和0.93eV。

In the impulse barrier penetration problem, we use the set of rules of constructing the semiclassical green function to obtain the transmission coefficient which is identical to the results evaluated via standard methods.

在脉冲型势垒的透射问题中，我们利用前面提到的求解体系格林函数的规则，得到了脉冲性势垒的透射系数，数值分析表明与用标准的量子力学方法得到的结果相一致。

Based on the FDTD method,three different potential-barrier problems including rectangular potential-barrier,deltoid potential-barrier and syntonic potential-barrier are investigated.

在此基础上，计算模拟了三种不同的势垒如方势垒、三角形势垒和谐振势垒下系统的能量变化、概率变化，再现了量子隧道效应这一重要物理现象。

From the potential energy profile, it can be predicted that, the dominant channel of this reaction consists of three steps: the two reactants first form a three-membered ring intermediate (INT1) through a barrier-free exothermic reaction of 19.2 kJ/mol; three-membered ring intermediate (INT1) isomerizes to a four-membered ring silylene(P2) via the transition state (TS2) with an energy barrier of 22.8 kJ/mol; four-membered ring silylene(P2) further reacts with ethene(R2) to form a silicic bis-heterocyclic compound (P3), which is also a barrier-free exothermic reaction of 132.2 kJ/mol.

用CCSD//MP2/6-31G*方法研究了单重态二甲基亚烷基硅烯与乙烯生成硅杂双环化合物环加成反应的机理，根据该反应的势能面可以预言，该反应的主反应通道有三步组成：第一步是两反应物（R1， R2）首先生成了一三元环中间体（INT1），它是一无势垒的放热反应，放出的能量为19.2 kJ/mol；第二步是三元环中间体(INT1)经过渡态TS2异构化为了四元环硅烯（P2），其势垒为22.8 kJ/mol；第三步是四元环硅烯（P2）进一步与乙烯(R2)反应生成了硅杂双环化合物（P3），该反应也是一无势垒的放热反应，放出的能量为132.2 kJ/mol。

与势垒相关的网络解释 [注：此内容来源于网络，仅供参考]

barrier layer：势垒层

Barrier 势垒 | Barrier layer 势垒层 | Barrier width 势垒宽度

barrier：势垒

一 般的二极管是利用PN结的单方向导电的特性,而肖特基二极管则是利用金属和半导体面接触产生的势垒(barrier)整流作用,这个接触面称为"金属半导 体结",其全名应为肖特基势垒二极管,简称为肖特基二极管.

barrier energy：势垒能

barretter bridge 镇流电阻器电桥=>バレッタブリッジ | barrier energy 势垒能 | barrier field 势垒场

Mott barrier：莫脱势垒

Motril cotton 莫特里尔棉 | Mott barrier 莫脱势垒 | Mott barrier diode 莫特势垒二极管

potential barrier：势垒,位垒

potenial curve 势曲线 | potential barrier 势垒,位垒 | potential difference 势差,位差

potential barrier：位垒,势垒

1820. potential 电位,电势 | 1821. potential barrier 位垒,势垒 | 1822. potential circuit 电压回路

barrier gate：势垒栅

电源中断方面,通过在电源域之间插入势垒栅(Barrier Gate)进行了处理. "即使是DFT工具自动插入的电路,也必须插入势垒栅. 但由于并不是DFT的设计人员亲自在设计,所以手动设计的势垒栅的插入很容易出现错误"(中山). 因此,

schottky barrier gate：肖特基势垒栅

schottky barrier 肖特基势垒 | schottky barrier gate 肖特基势垒栅 | schottky barrier gate fet 肖特基势垒栅场效应晶体管

schottky barrier gate fet：肖特基势垒栅场效应晶体管

schottky barrier gate 肖特基势垒栅 | schottky barrier gate fet 肖特基势垒栅场效应晶体管 | schottky barrier mos 肖特基势垒栅金属氧化物半导体

schottky barrier gate fet：肖特基势垒栅场效应电晶体

schottky barrier gate 肖特基势垒栅 | schottky barrier gate fet 肖特基势垒栅场效应电晶体 | schottky barrier mos 肖特基势垒栅金属氧化物半导体