- 更多网络例句与光蚀刻相关的网络例句 [注：此内容来源于网络，仅供参考]
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Finally, a two-mask process was attempted to extend the same concept of the chip process. Here the mask of the contact aperture was replaced by the mask of the LED pad. After etching the SiO2 and ITO in the aperture region, a lateral etch of SiO2 was made to increase the ITO contact area. Although the forward voltage of the GaN LED shows a normal value, the process yield is still low and requires further study.
二道光罩制程延伸了三道光制程的理念，只是因为透明导电层的圆孔图形，是用电极的光罩去开的，所以蚀刻完二氧化矽膜及氧化铟锡膜后，必须再做二氧化矽膜的回蚀刻，让二氧化矽再内缩进去，以增加氧化铟锡和电极的接触面积，不会造成发光二极体的顺向电压提高，但因制程良率太低，所以还须要继续研究改善。
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Another approach in enhancing the light extraction efficiency of AlGaInP LED was accomplished using a surface roughening process. In this process, the Au(170 nm)/AuBe(260 nm)/Au(170 nm) ohmic contact layers were first deposited on the GaP window layer. After the alloy annealing process (480°C for 10 min), the Be atoms will diffuse into the GaP top layer and form non-uniform clusters. The LED samples were then immersed into a mixture 3H3PO4:1H2O2:1H2O solution for 6 min, resulting in a rough GaP surface. The luminous intensity of the AlGaInP LED can increase from 42 to 50 mcd, that is, an 18% enhancement can be achieved via the present non-photolithography surface roughening process.Keywords: LED, AlGaInP, Cu substrate, Reflector, Surface roughening
在实验的第二部份是开发磷化镓窗口层之粗化制程，我们是藉由正面金/铍欧姆接触电极之熔合制程，使铍扩散至磷化镓层，同时利用铍渗入磷化镓造成之特殊组成，可形成不均匀之蚀刻阻挡，而在磷化镓表面形成粗化，我们发现480℃、10分钟的熔合制程，加上浸泡磷化镓蚀刻溶液6分钟，可将四元发光二极体之发光亮度由42 mcd 提升到50 mcd，经由此无光罩粗化制程可将亮度提升18%，明显提升磷化铝铟镓发光二极体之外部量子效率。
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The method includes the following steps: a semiconductor basal body is provided and the insulating layer of the semiconductor basal body is plated with light-sensitive lacquer and then is exposed in light and at last is developed; etching process is carried out to make a through hole on the insulating layer; cineration process is done, the remanent light-sensitive lacquer is removed and the temperature for the cineration process is 20-50 DEG C; wet cleaning process is carried out.
该制造方法包括如下步骤：提供半导体基体，对半导体基体的绝缘层进行镀光刻胶步骤、曝光步骤、显影步骤；进行蚀刻步骤，在绝缘层上形成通孔；进行灰化步骤，将剩余的光刻胶移除，且灰化步骤的温度条件范围是20-50摄氏度；进行湿法清洗步骤。
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The professional skill area of Invarium specialty is a graph the research and development of integrated science and technology, can realize design of excellent film of smooth attack by surprise and craft to optimize with the speed of industry lead, include make from film of attack by surprise, to photoetching and etched whole workmanship flow.
Invarium拿手的专业手艺区域是图形综合科技的研发，能够以业界超前的速度实现出色的光掩膜设计和工艺优化，包括从掩膜建造、到光刻和蚀刻的整个制造工艺流程。
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By using the laser-lift-off technique followed by plasma etching process to roughen the surface, the VLEDs with n-GaN surface roughening has been fabricated.
另一部份，则是在垂直式氮化镓发光二极体的表面制造粗化的效果，以来增进光从发光二极体中萃取出的效率，利用乾式蚀刻将表面制造出粗化的效果，再利用标准的黄光微影制成技术，因此成功的制造出n型表面粗化的垂直式氮化镓发光二极体，至於出光强度的增强量会随者表面粗化情况的不同有著30%？
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We used ITO glass substrate and high purity（99.99%） titanium , put to use sputtering process, add to high purity O2 make it complete the best structure film and the thickness about 1400 . By way of 500℃ anneal could got a better anatase phase, this result could easy reaction with electrolyte to increase electron-transferred. Used as spin casting covering PR on ITO substrate, transferring patterns of array circular shapes on a mask to photography, used optimize temperature and time to hard bake. Finally used HCl to etching underexposed TiO2 area, and acetone to tripper top PR, make it to accomplish pillars shape TiO2 electrode.
本研究使用ITO玻璃基板为底材在以高纯度钛(99.99%)为靶材，利用溅镀方式通入纯氧使其行成高纯度TiO2镀於ITO基板上行成厚度约1400的薄膜，且经500℃高温烧结使其行成最强的锐钛矿结晶相，此晶相有利於与电解液反应进而增加电子的转移，提升太阳能电池最佳的效率，在以旋转涂布方式铺上光阻，以矩阵排列的圆孔光罩曝光、最佳的温度及时间来烘烤、显影后；使用盐酸以等向性湿蚀刻方式蚀刻未曝光之TiO2区域，最后利用鈵铜将最上层光阻去除，使其行成柱状TiO2的电极。
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The BARC layer is etched with a significant negative etch bias to reduce the critical dimension of the opening in the multi-layer mask below the lithographically define dimension in the photoresist.
使用有效的负性蚀刻偏置蚀刻该BARC层以减小在该多层掩模中的开口的特征尺寸至在该光致抗蚀剂中的平版印刷所确定的尺寸之下。
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As the feature size decreases below the wavelength of the illumination system, the diffraction and other effects arising from resist developing and etching causes more and more distortion in the pattern transfer process. Today, new chips with very small feature size can not be manufactured without the support of RETs, OPC is one of the most important technologies in such RETs.
随着集成电路的特征尺寸逐渐下降到光刻所用的光源波长之下，由于光的衍射和光刻胶显影蚀刻等因素带来的不可避免的影响，硅片上实际印制出来的图形与设计图形不再一致，这使得如今的制造工艺已经离不开RET技术的支持，而OPC则是RET技术中的一项重要内容。
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Because of diffraction and other physical phenomena during mask making, optical lithography and etching under Sub-Wavelength Lithography, the mask patterns are not the same as printed shapes on silicon wafer.
在亚波长光刻下，由于掩模制造、光刻和蚀刻过程中光的衍射及其它物理现象，导致掩模图形和硅片表面实际印刷图形之间不再一致。
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A process for making an electronic device which comprises applying a nonaqueous plate-resistant ink by ink jet printing to selected areas of a dielectric substrate, optionally laminated with an electrically conductive metal, exposing the plate resistant ink to actinic and/or particle beam radiation to effect polymerisation, adding one or more metal layers by electrolytic or electroless deposition, the upper layer of which is an etchresistant metal, removing the polymerised plate-resistant ink with alkali and finally removing the electrically conductive metal which are optionally directly laminated to the dielectric substrate and not protected by an upper layer of etch-resistant metal by chemical etching wherein the plate-resistant ink is substantially solvent-free and comprises: A 30 to 90 parts acrylate functional monomers free from acid groups comprising mono- or higher functionality wherein 5 to 95% by weight are mono-functional monomers; B 1 to 30 parts acrylate functional monomer containing one or more acid groups; C 0 to 20 parts polymer or prepolymer; D 0 to 20 parts radical initiator; E 0 to 5 parts colorant; F 0 to 5 parts surfactant; and where the ink has a viscosity of not greater than 30 cPs at 40 DEG C and all parts are by weight.
一种制备电子装置的方法，所述方法包括以下步骤：通过喷墨印刷在任选层压了一种或多种导电金属的介电底材的选定区域涂覆非水的阻沉积油墨，将所述阻沉积油墨暴露在光化辐射和/或微粒束辐射中以完成聚合，通过电解沉积或无电沉积增加一层或多层金属层，其中最上层的金属层为一种或多种阻蚀刻金属，用碱除去聚合的阻沉积油墨，最后通过化学蚀刻将任选直接层压在所述介电底材上并且不被一种或多种阻蚀刻金属的上层保护的导电金属除去，其中所述阻沉积油墨基本不含溶剂，并且包含以下组分：A30-90份不含酸基团的丙烯酸酯功能性单体，所述单体包括单官能或多官能单体，其中5-95％重量为单官能单体；B1-30份包含一个或多个酸基团的丙烯酸酯功能性单体；C0-20份聚合物或预聚物；D0-20份自由基引发剂；E0-5份着色剂；和F0-5份表面活性剂；其中所述油墨的粘度在40℃下不高于30cPs，并且所有的份数以重量计。
- 更多网络解释与光蚀刻相关的网络解释 [注：此内容来源于网络，仅供参考]
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etcher：蚀刻机
美商应用材料(Applied Materials)总裁丹.梅登(Dan Maydan)根据Dataquest及VLIS统计,科林研发制造的蚀刻机(Etcher)是1996年销售冠军,占有率达30%,今年五月更以二亿五千万美元合并On-Track公司跨入化学机械抛光(CMP)领域,
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soft ground etching：软底蚀刻
soft ground 软地,软地层,软土地面 | soft ground etching 软底蚀刻 | soft hair polishing wheel 软发抛光轮
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photoengraving：晒版蚀刻法
photodetector 光敏器 | photoengraving 晒版蚀刻法 | photofabrication 金属蚀刻晒版法
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photoetching：光刻法
photoetching 光刻 | photoetching 光刻法 | photoetching 光蚀刻
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photoetching method：光蚀法
photoetching machine 光刻机 | photoetching method 光蚀法 | photoexcitation 光激励
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contact photolithography：接触光蚀刻
contact pad 接触点 | contact photolithography 接触光蚀刻 | contact potential 接触电势
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contact photolithography：接触光蚀刻iVJ中国学习动力网
contact pad 接触点iVJ中国学习动力网 | contact photolithography 接触光蚀刻iVJ中国学习动力网 | contact potential 接触电势iVJ中国学习动力网
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resistless lighography：无光刻胶蚀刻
resistless etching 无光刻胶腐蚀 | resistless lighography 无光刻胶蚀刻 | resistless patterning 无光刻胶图像形成
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photoetch：光蚀刻,光刻[技术];照相板,影印板
photoelectric a.光电的 | photoetch 光蚀刻,光刻[技术];照相板,影印板 | photofabrication 光刻法,照相化学腐蚀制造法
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Polishing etches：抛光蚀刻
Polishing抛光 | Polishing etches抛光蚀刻 | Polycrystalline多晶的