- 更多网络例句与光电流相关的网络例句 [注：此内容来源于网络，仅供参考]
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The expressions of the scattering signal of AOSLDA, first obtained by electro-magnetic radiation formula on the assumption that the measurement volume moves in a uniform velocity, were shown.
在测量点以锯齿波方式移动的情况下，对声光扫描LDA的光电流信号做了进一步分析，得到不同空间位置处的散射粒子所产生的光电流信号的交流振动次数及其变化规律。
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The characteristics of pentacene/perylene derivatives based organic solar cells are investigated in this thesis Donor and acceptor layers are pentacene and N N'-dioctyl-3 4 9 10-perylenetetracarboxylic diimide (PTCDI-2~13C) respectively Twelve organic solar cells with pentacene/PTCDI-2~13C heterojunctions were fabricated to study the influence of various alkylic perylene derivatives on the power conversion efficiency Under the sunlight simulator with AM1 5G filter and 100 mW/cm2 the solar cell of pentacene/PTCDI-7C heterojunction with cathode of Ag/Al bilayer has the best performance among the devices with pentacene/PTCDI-2~13C heterojunctions In PL spectrum analyses the pentacene/PTCDI-7C film had lower recombination rate than the other pentacene/PTCDI-2~13C films; therefore more excitons could reach the P/N junction and enhance short-circuit current Furthermore the PTCDI-7C film grown on the surface of penatcene was more matched than other PTCDI films analyzed by the PL peak shifts of 10 nm and 45 nm thick PTCDI-2~13C and images of atomic force microscope More lattice match between the films of pentacene and PTCDI resulted in fewer defects in P/N junction and more carries can reach electrodes Accordingly the power conversion efficiency approach 2% was obtained from the solar cell with the active layer of pentacene/PTCDI-7C
本研究探讨以五环素/骈苯衍生物异质接面太阳能电池之特性，利用pentacene作为电子施体有机材料，PTCDI -2C~13C作为电子受体有机材料，制作出异质接面为pentacene/ PTCDI-2C ~13C等12种有机太阳能电池，比较不同碳数的骈苯衍生物对於有机太阳能电池之光电转换效率之影响。在AM1 5G、100 mW/cm2的模拟太阳光下，以pentacene/PTCDI-7C异质接面太阳能电池具有短路电流9 882 mA/cm2、开路电压0 376 V、填充因数0 523及光电转换效率达1 945%，皆比其他pentacene/PTCDI-2C ~13C异质接面太阳能电池来的大。由薄膜分析可知PTCDI-7C在这12种太阳能电池中具有较低的电子电洞复合发光效率，可以让较多激子到达异质接面进行电荷分离，减少电子电洞对复合发光的机率；此外，由光激发萤光光谱之峰值位移配合原子力显微镜表面结构图，可以得知当PTCDI-7C成长在pentacene上时会顺著pentacene的结构成长薄膜，故较无缺陷产生在P/N接面处；而在其他结构下则无此现象产生，致使在pentacene/PTCDI-7C薄膜中的载子有较大的机会可以移动至电极，使光电流提高，进而使光电转换效率提高。
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It is determined that the sun vector measurement error is about 5.74° which is caused by many factors, such as the non-ideal cosine curve between incident angle and photocurrent, the photocurrent noise, the nonlinearity of the analog circuit and the A/D converter, and the temperature inaccuracy etc.
通过分析获得太阳入射角——光电流非理想的余弦特性、光电流的噪声起伏、处理电路非线性、A/D采样非线性、温度测量不确定性等因素导致的太阳矢量实际测量误差为5.74°。
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But in achieving the current-voltage conversion, with the current-voltage feedback circuit we may reach the goal in the feedback resistance using, namely premise the photoelectric current certainly, the feedback resistance is bigger, the voltage is greater.
但是在实现电流-电压转换的时候，用的电流-电压反馈电路，我们可以在反馈电阻的使用上达到目的，即在光电二极管的光电流一定的前提下，反馈电阻越大，电压越大。
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AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.
氮化铝金属-半导体-金属光侦测器则是用In situ metallization制程，利用低温回旋溅镀法在氮化镓/蓝宝石基板上沉积之氮化铝，再直接溅镀金属铝作为指叉电极，比较目前文献制作出来的氮化铝MSM元件，可得到很好的元件金半接面之理想因子1.0125，算出萧特基能障高度为0.916eV，并有很低的暗电流为1.39 pA，提升了元件的特性，使用150 W氘灯入射，光暗电流差距可到两个order，且元件之光电流与入射光功率呈线性，显示所制作之氮化铝MSM元件，很适合针对深紫外光波段侦测。
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The increased interfacial roughness can enhance photocurrent and efficiency of the device.
表面粗糙度的增加将增强入射光在界面处的反射作用，增强入射光在激活层中的吸收，进而提高器件的光电流和转换效率。
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Dark current, photocurrent, and spectral responsivity were measured.
对器件的暗电流、光电流和光谱响应进行了测量。
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In particuler, for the first time, a rigorous method of calibrating the phase-shift of modulated photocurrent has been presented.
其中首次对调制光电流相移分析技术提出了一种严格校准调制光电流相移的方法。
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In addition, for photodiodes passivated with thin SiO2, Photocurrent decreases slightly, however dark current increases remarkably.
实验中还发现，薄钝化的二极管的光电流衰减最小，其暗电流增加最显著。
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A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.
二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。
- 更多网络解释与光电流相关的网络解释 [注：此内容来源于网络，仅供参考]
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photocell：光电管;光电流;感光器
photo electric switch 光电式开关掣 | photocell 光电管;光电流;感光器 | physical constraint 实际限制
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photocurrent：光电流
因照光而从金属表面脱离的电子可采用正极电压收集,收集所得的电子在电路回路中形成电流,称为光电流(photocurrent). 此实验证明了电磁波亦具有粒子性,说明了波同时具有波动与粒子的双重性,故被列为物理发展史上十大重要经典实验之一.
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photocurrent：光电流=>光電流
photocoupling 光电耦合 | photocurrent 光电流=>光電流 | photocurrent carrier 光电载流子
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sinusoidal photocurrent：正弦型光电流
sinusoidal phase grating 正弦型相位光栅 | sinusoidal photocurrent 正弦型光电流 | sinusoidal radiation chopper 正弦型辐射斩光器
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photocurrent nosie：光电流噪声
photocurrent 光电流 | photocurrent nosie 光电流噪声 | photocyristors 光闸流晶体管
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photocurrent method：光电流法
photo-luminescence method 光激发光法 | photocurrent method 光电流法 | photoelectric pyrometer 光电高温计
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saturation of photoelectric current：光电流饱和
"saturation of iron ","铁[磁]饱和,铁心饱和" | "saturation of photoelectric current ","光电流饱和" | "saturation of pole ","磁极饱和"
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saturation of photoelectric current：光电流之饱和
饱和感应 saturation inductance | 光电流之饱和 saturation of photoelectric current | 饱和点 saturation point
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positive primary photoelectric current：阳原光电流,正原光电流
"positive potential","正电位" | "positive primary photoelectric current","阳原光电流,正原光电流" | "positive real function","正实函数"
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positive primary photoelectric current：正原始光电流
positive pressured, powered dust respirator 气体供应式滤尘呼吸防护器 | positive primary photoelectric current 正原始光电流 | positive prime 离心吸入