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- 光蚀刻
- 更多网络例句与光刻相关的网络例句 [注:此内容来源于网络,仅供参考]
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Meanwhile, it has a good compatibility with traditional proximity or contact lithography, thus we can carry the same manufacturing process on the basis of little modification of traditional aligner's system.
由于基于表面等离子体的光刻技术和传统的光刻系统能很好地兼容,因此可以在传统接近接触式光刻机的基础上稍作改进即可实现纳米量级的光刻分辨力。
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The theoretical research, computer simulation and experimental results analysis show that maskless laser interferometric lithography and holographic lithography have the characteristics of large field of view, high resolution, distortionless, relatively simple system structure, low costs and convenient realization way. They have a broad application prospect.
激光干涉光刻技术研究四川大学博士学位论文理论研究、计算模拟和实验结果分析表明,无掩模激光干涉光刻和全息光刻具有大视场、高分辨率、无畸变、系统相对简单、成本较低,实现方便等特点,具有广阔的应用前景。
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In this paper. a novel magnetic head crab track pluck detection way is given by the analysis of etched servo graph for 4000 TPI etched surface servo. It improve the maximum seek track speed of magnetic head greatly, So that magnetic head can seek track at high speak for high track density.
光刻伺服盘是一种新的磁头伺服定位技术[1],通过对4000TPI光刻面伺服系统的光刻伺服图形结构的分析,本文提出了一种简单可靠的磁头过道脉冲检测方式,可显著提高磁头寻道速度,保证磁头在高道密度下高速寻道。
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This paper introduced principle, flow, process of catalytic platelets of photoetching in the integral catalyst bed with high precision mould of dual-face self-aligner and standard MEMS photoetching technology.
采用自主设计研制的高精度双面自对准光刻模具和标准MEMS 光刻工艺技术研制出整体式层板催化剂床板片,简要介绍了光刻工艺原理、工艺流程和工艺过程。
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The user can be in Beijing not only east store with 2, 999 yuan exceed low case to be bought at present industry La Guang writes the LG GGW-H20L La Guang with the rapiddest rate to cut collection engine, in the meantime, still can obtain freely give 2 pieces of only film magazine to install La Guang of power treasure 25GB BD-R to engrave collection plate, and buy a machine while the user that hopes to have more blue photoetching to record dish, OK still special offer 89 yuan / piece the price (cost price 168 yuan / piece), buy most La Guang of BD-R of 5 pieces of power treasure engraves collection plate (offer this bargain price to the user that buys a machine only) favourable activity.
用户不仅可以在京东商城以2,999元的超低价格购买到现在业界蓝光写入速度最快的LG GGW-H20L蓝光刻录机,同时,还可免费获赠2张单片盒装威宝25GB BD-R蓝光刻录碟,而购买机器的同时希望拥有更多蓝光刻录碟的用户,还可以特价89元/张的价格(原价168元/张),购买最多5张威宝BD-R蓝光刻录碟(仅向购买机器的用户提供此特价)的优惠活动。
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According to the demand of high data density of IC devices,higher photolithography resolution is required.
随着IC集成度的提高,要求越来越高的光刻分辨力,但光学光刻的分辨极限受光刻物镜数值孔径和曝光波长的限制。
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Polyimide was patterned by direct laser writing, then the patterned polyimide was immersed in silver diammine solution for seeding. The silver particles were deposited in-situ at the irradiated areas on polyimide films, whose particle size was 150-300nm.
用波长为266nm的激光在聚酰亚胺薄膜表面光刻出所需图形,将光刻后的聚酰亚胺薄膜浸入到银氨溶液中,在光刻处发生氧化还原反应并原位沉积了粒径为150nm到300nm的银粒子,以该银粒子作为活化种实施化学镀,在聚酰亚胺表面上沉积得到了金属铜的图形。
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And TM was carefully added to the solution of photo-PAE to form a PSPI solution containing TM. The composite filmcast from PSPI-TM can be developed using NMP. When the content of Ti〓 incomposite film was beyond 3%, a heateddeveloper had to be used for the successful development of the composite film.Compared with corresponding ester-type PSPI, D〓 of PSPI-TM increasedrapidly with the content of TM in the composite.
光刻实验发现这种含TM的PSPI光刻胶膜比相应的酯型PSPI光刻胶膜难显影,一般需NMP这样的强溶解性能的溶剂作为显影液,才能顺利显影,当Ti〓含量大于3%(基于酰亚胺化后PI的量),必须升高温度才能顺利显影;这种含 Ti的PSPI光刻胶在感光性能上也比相应的酯型PSPI光刻胶低很多倍,形成50%留膜率所需的曝光剂量随TM含量的增加,而大幅度地增加。
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A modified aerial image was obtained by convolving the aerial image with a Gaussian filter to smear the image in a manner analogous to resistive diffusion, and then applying a variable threshold resist model on the modified image to predict the CD variations.
用高斯滤波器与空间影像进行卷积,得到改进的空间影像来模拟光刻胶的扩散,然后使用可变阈值光刻胶模型,以实际工艺数据拟合该模型参数,再把改进空间影像的相关信息作为输入,并根据可变阈值光刻胶模型所确定的光强阈值来预测CD变化,从而使光刻仿真的结果更精确地附合实际测量数据。
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Photoresist becomes viscous when heated above its glass transition temperature, so the line of photoresist mask can be smoothened.
为了消除重力的影响,在倒置状态下对光刻胶掩模进行高于其玻璃转变温度以上的烘烤,尽量保证光刻胶线条高度的同时得到了光滑的光刻胶掩模,再结合光刻胶灰化技术,进一步得到小占宽比、平直而且干净的光刻胶掩模。
- 更多网络解释与光刻相关的网络解释 [注:此内容来源于网络,仅供参考]
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litho:光刻
litho 光刻 | lithographicequipment 光刻装置 | lithographicimagery 光刻成象
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photoetching:光刻法
photoetching 光刻 | photoetching 光刻法 | photoetching 光蚀刻
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photoetching material:光刻材料
photolithography 光刻 6N Pz a | photoetching material 光刻材料 =G[1]&j| | photoetching 光刻法 a(hm_Klt
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photoetching technique:光刻技术
photoetch integrated circuit 光刻集成电路 v*n21z | photoetching technique 光刻技术 <*O;:hZpS] | photoresist 光刻胶 ?sf|'V;
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photolithographic resolution:光刻蚀清晰度
photolithographic mask 光刻用掩模 | photolithographic resolution 光刻蚀清晰度 | photolithography 光刻法
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photolithographic resolution:光刻蚀清楚度
photolithographic mask 光刻用掩模 | photolithographic resolution 光刻蚀清楚度 | photolithography 光刻法
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resistless lighography:无光刻胶蚀刻
resistless etching 无光刻胶腐蚀 | resistless lighography 无光刻胶蚀刻 | resistless patterning 无光刻胶图像形成
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photoetch:光蚀刻,光刻[技术];照相板,影印板
photoelectric a.光电的 | photoetch 光蚀刻,光刻[技术];照相板,影印板 | photofabrication 光刻法,照相化学腐蚀制造法
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photoetch pattern:光刻圖型
光刻 photoengraving | 光刻圖型 photoetch pattern | 光刻,光蝕刻法 photoetching
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photoetch method:光刻技术,光刻法
photoetch 光刻 | photoetch method 光刻技术,光刻法 | photoetching material 光刻材料