- 更多网络例句与光中子相关的网络例句 [注：此内容来源于网络，仅供参考]
-
In order to prevent all kinds of radiation produced by electron linear accelerator from bringing about harmful effect on creatures,we adopt some measures to shield bremsstrahlung X-rays and photoneutron in the design of accelerator.
为防止电子直线加速器产生的各种辐射所造成的有害生物效应，加速器实验室应采用一系列措施，对韧致辐射 x 线及光中子进行屏蔽防护。
-
Thermal neutron radiography is a useful complementary tool of the other non-destructive testing methods for the hydrogenous materials and heavy metal subassembly,and thermal neutron tomography has not been developed in China.By the use of the CCD-based thermal neutron digital radiography facility in SPRR-300 reactor and the Al column sample with holes,the projecting data of 36 multiplied 552 groups are collected.
热中子照相技术在检测含氢材料、重金属组件结构、原子序数相近的不同元素、放射性材料等方面弥补了X光等其他无损检测技术的不足，广泛用于重金属组件、火工品等武器部件的质量检测和库存武器可靠性和有效性评估中。
-
The shielding structure of this treatment room is effective for photoneutron shielding.
该治疗室之遮罩工程能有效防护治疗时产生之光中子污染。
-
Ower power of LHW heating was easy brought runway discharge and produce a mass of photoneutron.
HW加热功率较低时，易形成逃逸，产生大量的光中子。
-
EGS4, a Monte Carlo code, was used to simulate the transportation of electron photon clusters in the targets and the photon track lengthes were calculated by tracking the radiation photons to determine the photoneutron yields .
计算了电子加速器中不同能量的电子垂直入射到钨靶和金靶上时的光中子产额。
-
A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.
二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。
-
The plan for processing the uranium oxide had been approved by their supervisor; however, it involved mixing many times the batch that the factory liquid processing tank was designed to handle, and when the seventh batch was added, a flash of blue light and a burst of neutron radiation was emitted.
这次铀氧化物的处理计画，是得到主管机关许可的，处理的方法是在经特殊设计的液体处理槽中，加入并混合不同批次的溶液；然而，当第七批溶液被倒入槽中时，临界事故发生了，只见蓝光一闪而过，中子辐射爆冲而出。
-
Aura: is the bioplasmic energy around an object and life form. It contains divine atom, proton, electron, neutron, light, atom, proton, electron, neutron, anti-proton, photon, anti-electron, antineutron, and also anti-energy and antimatter field.
它含有神性的光，原子，质子，电子，中子原子，电子，中子，原子质子，反-质子，光子，正电子，反中性子，同样也有反-能量和反物质粒子在光环里存反物质粒子反物质粒在和由光环或金场金场组成。
-
This paper describes the performance of energy response to neutrons and the calibration method of Cd Cap type thermoluminescent neutron dosemeters for personal neutron dose monitoring.
本文叙述了用作个人中子剂量监测的镉帽型热释光中子剂量计的中子能响特性和刻度方法。
-
The diagnostic of DT fuel plasma areal density in the direct-driven implosion experiments on SG-Ⅱ laser facility has been performed by measuring the number of recoil D and T produced by 14MeV neutron′s scattering. The particles of recoil D and T were detected by CR39 solid-state nuclear track detector.
在神光Ⅱ基频光直接驱动内爆实验中，利用CR39径迹探测器测量了DT靶丸释放出的 14MeV中子弹性散射后逃逸出燃料的反冲D核和反冲T核的数量，实现了激光聚变实验中燃料面密度〈ρR〉的诊断。
- 更多网络解释与光中子相关的网络解释 [注：此内容来源于网络，仅供参考]
-
photoneutron：光激中子
photonephelometer 光电浊度计 | photoneutron 光激中子 | photoneutron emission 光激中子发射
-
photoneutron：光中子
photoneutron logging 光中子测井 | photoneutron 光中子 | photonitrosation 光致亚硝化
-
photoneutron：光激中子 光中子
photoneutrinoprocess 光生中微子过程 | photoneutron 光激中子 光中子 | photoneutrondeuteriumsource 光中子氘源
-
photoneutron：光[致]中子
photoinduced carrier 光致载流子 | photoneutron 光[致]中子 | photon counter 光子计数器
-
photoneutron emission：光激中子发射
photoneutron 光激中子 | photoneutron emission 光激中子发射 | photonic band structures 光子能带结构
-
photoneutron logging：光中子测井
photonephelometer 光电浊度计 | photoneutron logging 光中子测井 | photoneutron 光中子
-
photoneutron source：光激中子源
photoneutron 光激中子 | photoneutron source 光激中子源 | photonics 光子学
-
photoneutron source：光[致]中子源
光[致]中子源 photoneutron source | 光[致]中子标准 photoneutron standard | 光子学 photonics
-
photoneutron standard：光[致]中子标准
光[致]中子源 photoneutron source | 光[致]中子标准 photoneutron standard | 光子学 photonics
-
source, photoneutron：光中子源
光子源 source, photon | 光中子源 source, photoneutron | 反应器制(放射)源 source, pile-made