- 更多网络例句与使氮化相关的网络例句 [注：此内容来源于网络，仅供参考]
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On the other hand, in order to contact to practical application and combine the actual experimental condition, we can make some elementary research on the application of boron nitride which has been synthesized.
将合成的纳米氮化硼材料进行表面改性，改善纳米粉体表面的润湿性，增强了其在介质中的界面相容性，使氮化硼纳米粒子容易在有机化合物中分散，提高了氮化硼纳米粉体的应用性能。
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The paper discloses a process for diazotization fluorination of aromatic primary amines utilizing sodium nitrite and anhydrous hydrofluoride to produce the corresponding diazonium fluoride which is decomposed, usually by heat, to make the desired fluoroaromatics .
本文通过重氮化工艺路线的改进，在液态氟化氢中进行重氮化和重氮盐的热分解，提高了芳香族氟化物的收率，并且使重氮化反应工艺能应用于工业化生产。
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According to Griess reaction, diazonium-salts formed from aromatic amines such as sulfonamides etc., react with NaNO_2 in acid medium and may be coupled with α-naphthylamine or diphenylamine to produce red colored compounds.
一按Griess反应芳香族胺类的重氮化鹽，如对氨基苯磺醯胺类药物等，在酸性溶液中皆能与α-萘胺或二苯胺分别偶合成偶氮色素而显紅色，过多之亞硝酸可与氮色素再作用使紅色消失而呈棕黄色。
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With trimethyl,4-dodecylbenezyl ammonium chloride and 18-crown-6 as pase-transfer catalysts, the azidation of polyepichlorohydrin in poly and H2O were studied. The reaction discipline and mechanism were discussed. The results show that the system with trimethyl, 4-dodecylbenezyl ammonium chloride as phase transfer catalyst and PEG as medium is a safe and effective approach to glycidyl azide polymer preparation, and azidational ratio of PECH can reach 97% above within 15 h.
研究了氯化十二烷基苄基三甲基铵和18-冠－6为相转移催化剂时端羟基聚环氧氯丙烷在聚环氧乙烷和水为介质中的叠氮化反应，探讨了反应规律和反应机理，结果表明：以PECH为介质，十二烷基苄基三甲基氯化铵(TMDA-1)为相转移催化剂的反应体系，可在15h内使PECH叠氮化转化率达到97%以上，无主链断裂等副反应，是一条较为安全快速的制备叠氮粘合剂的方法。
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The results showed that the TiN andN films are polycrystalline phase. The properties and structure of TiN films are mainly determined by the N2 mass flow rate, and as the N2 mass flow rate increases, the structure of the TiN films transforms to f.c.c. type leading to better the properties of films. The presence of negative bias voltage can optimize the grain of TiN films, lower the defect proportion and denser the films, which improves the hardness of films. The TiN films conform to the free carrier absorption mechanism and there are many of free electrons with lower N content in TiN films. With the increase of N content, the quantity of free electrons and reflectivity of films decrease, and the plasma frequence shifts to the lower energy, which leads to the regular change of colors of films from silver, yellowy, golden to yellow-red, meanwhile the lightness of films decreases. The goldenN film consists of TiN and ZrN phase, but belongs to a sigle f.c.c. structure with (111) preferred orientation. The Zr-doping dosen't change the position of the valance band, conduction band and forbidden band ofN film, but leads to the presence of new energy levels, which is the reason thatN film remains golden. The transparent hard films with good corrosion resistance and high hardness have been prepared and the further reseachs showed that the grain size of those films is by far smaller than the wave length and the width of forbidden band of those films is very broad, is the reasons that those films are transparent.
研究表明：氮化钛和N 薄膜为多晶态，氮流量决定了氮化钛薄膜的结构和性能，增加氮流量能使氮化钛薄膜的结构向面心立方结构转变，从而得到性能良好的氮化钛薄膜；施加负偏压能优化氮化钛晶粒和减少薄膜中的缺陷，使膜层变得更致密，从而提高薄膜硬度；氮化钛主要遵循自由载流子光吸收，氮含量较少时薄膜中的自由电子数目较多，随着氮含量的增加，薄膜中的自由电子数目不断减少，反射率逐渐降低，等离子体频率向低能端移动，从而使薄膜颜色出现规律变化，由金属色银白色到淡黄、金黄再到红黄，并且薄膜亮度呈下降趋势；金黄色的N 薄膜中存在TiN 和ZrN 的分离相，但其为单一的面心立方结构并具有(111)面择优取向；相对于TiN 薄膜，Zr 掺杂后，并没有使薄膜的导带、价带和禁带发生变化，只是在TiN 禁带内增加了新能级，这也正是掺杂Zr 后，薄膜仍
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In the depth surpasses in 10 meter deep well nitrogenation oven technique of manufacture, applied the multi-link graduation to enter the ammonia active nitrogen atom weaken compensation method, caused the nitrided uniformity distinct enhancement.
在深度超过10米的深井氮化炉制造技术中，应用了多环分级进氨气活性氮原子衰减补偿法，使氮化均匀性明显提高。
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The well type gas nitrogenation oven uses the multi-layered multistage multi-link multi-spot assignment type ammonia input mode, enables the active nitrogen member fast evenly with the work piece surface union, forms the even fast nitrided level, the coordinate high speed spiral air flue, the effective addressing work piece blind hole and the deep hole nitriding craft, nitrides strongly by the microcomputer programmed control infiltrates, the diffusion technology heating curve.
井式气体氮化炉采用多层多段多环多点分配式氨气输入方式，使活性氮气分子能快速均匀地与工件表面结合，形成均匀快速氮化层，配合高速螺旋风道，有效解决工件盲孔和深孔地氮化工艺，由微电脑程序控制氮化强渗、扩散工艺加热曲线。
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Compounds 3a-3d, 4a-4d, 5a-5d, 6a-6e and 7a-7e were prepared with a new efficient method, in which the aromatic amines were diazotized with isoamyl nitrite in EtONa/EtOH under refluxing condition, and mono -, bis -and tetrakis -substituted calix [4] arenes were obtained respectively as main product by diazo-coupling in different molar ratio to calix [4] arene.
一，提出了一个有效的新方法合成含有芳香偶氮基团的杯[4]芳烃衍生物3a-3d；4a-4d；5a-5d；6a-6e和7a-7e：即在非水溶剂乙醇中用亚硝酸异戊酯，在强碱乙醇钠存在下对芳香胺进行重氮化，得到芳香重氮酸盐沉淀，过滤，然后加入杯[4]芳烃的四氢呋喃溶液，通入CO〓气体调节溶液的pH值为7-9，使其发生偶联反应。
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The results show that WO_3 can be nitrided in the mixture gas of hydrogen and nitrogen, and ...
结果表明，WO3可以在氢氮混合气中被还原氮化；氮化反应分两段进行；在氢氮体积比(4～5)∶1，反应温度650℃的条件下，WO3可以被还原为产物W2N；在不同氢氮比的混合气中氮化，WO3会生成不同的中间产物WO2和WOXNY，中间产物WOXNY进一步氮化生成W2N要比WO2容易；助剂Ni的加入使氮化反应温度降低了100℃；载体γ-Al2O3的加入使金属氧化物的氮化过程变为一步氮化还原反应。
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The thesis are divided into two parts. In the first part, we used 2,4,6-trichloro-1,3,5-triazine as the precursor to react with sodium which have been achieved by decomposing sodium hydrate at 623 K. At a low reaction temperature of 623 K, carbon nitride nanosphere、porous carbon nitride material and byproduct sodium chloride, would be produced.
本研究将分成两部份，第一部分是在低温下(623 K)将氢化钠粉末热裂解，生成表面积较大的熔融态金属钠，使气态的氰尿醯氯通入与熔融态金属钠在623 K反应，生成奈米氮化碳球、奈米孔洞性氮化碳材料及副产物氯化钠。
- 更多网络解释与使氮化相关的网络解释 [注：此内容来源于网络，仅供参考]
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diazotization：重氮化作用
diazonium 重盐 | diazotization 重氮化作用 | diazotize 使重氮化
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nitrogenous：氮的
nitrogenize 使氮化 | nitrogenous 氮的 | nitroglycerin 硝酸甘油
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azotic：氮的
azoth 水银 | azotic 氮的 | azotize 使氮化
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azotize：使氮化
azotic 氮的 | azotize 使氮化 | azotobacter 固氮菌
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diazotize：使重氮化
diazotization 重氮化作用 | diazotize 使重氮化 | dibasic 二盐基的
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nitriding：渗氮
其产生的情况可用下式表示:电浆技术除了在半导体业及电路板业有上述用途外,在塑料加工中用途更大,一般塑料的光滑表面皆可用电浆法加以微粗化,使具亲水性及在接着力上大大增强,亦为化学铣作(Chemical Milling)及钢料表面渗氮(Nitriding)等制程所采用.
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nitrogenize：使氮化, 使含氮
reversing chassis 回转底盘 | nitrogenize 使氮化, 使含氮 | upper serrated knife (切割器的)上面刻齿动刀片
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nitrogenize：使氮化
nitrogen 氮 | nitrogenize 使氮化 | nitrogenous 氮的
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azotizing：氮化(作用) 氮化的
azotize || 使氮化 | azotizing || 氮化(作用) 氮化的 | azotobacter || 固氮(细)菌
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borazon：一氮化硼
此次开发成功的低介电率膜使用一氮化硼(Borazon)化合物的改良材料. 一氮化硼由硼(B)和氮(N)组成,采用类似苯环的结构(图2). 并未置换硼中结合的氢(H),而是置换了某些化合物. 将该硼类化合物作为层间绝缘膜使用时,