低氧化物

基本解释 (translations)

protoxide

与低氧化物相关的网络例句 [注：此内容来源于网络，仅供参考]

Basanite and tephrite from Mt. Crater, Cape Bird and Bonney Lake exhibit similar composition in major elements and trace elements, rare earth elements . They are enriched in MgO, TiO〓, transitional elements and compatible elements , and depleted in SiO〓, Al〓O〓, Na〓O, K〓O, incompatible elements and rare earth elements; Latite from Cape Rodeys and Cape Evens are different from basanite and tephrite, they are enriched in SiO〓, Al〓O〓, Na〓O, K〓O, incompatible elements and rare earth elements, and depleted in Mgo, TiO〓, transitional elements and compatible elements. Volcanic rocks in five regions have the same isotopic ratio of 〓Sr/〓Sr (0.703115-0.703334) and 〓Nd/〓 Nd (0.512892-0.513076), however,〓Pb/〓Pb ratio in volanic rocks from Mt. Crater, Cape Bird and Bonney Lake is lower than those of Cape Rodeys and Cape Evens.

在主元素氧化物和微量元素、稀土元素含量上，克雷克特山、鸟角和博尼湖南岸的碧玄岩、碱玄岩成分比较类似，均具有较高的MgO、TiO〓、过渡元素和相容元素，较低的SiO〓、Al〓O〓、K〓O、Na〓O、不相容元素和稀土元素；罗德角和伊万思角安粗岩雷同，它们具有较高的SiO〓、Al〓O〓、Na〓O、K〓O、稀土元素和不相容元素，较低的MgO、TiO〓、过渡元素和相容元素，但五地区火山岩几乎具有一致的Sr、Nd同位素比值，〓Sr/〓Sr＝0.703115-0.703344、〓Nd/〓Nd＝0.512892-0.513076，在Pb同位素比值上，五地区的〓Pb/〓Pb＝18.664-19.913，其中碧玄岩和碱玄岩比安粗岩的比值稍低。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

The normal control group, hyperlipidemia model group, high dose of perilla seed group (2.5 g/kg), low dose of perilla seed group (0.83 g/kg) were designed to measure the contents of total cholesterol, three acids glyceride, high density lipoprotein cholesterol, low density lipoprotein cholesterol, very low density lipoprotein cholesterol and malondialdehyde, superoxide dismutase activity.

方法］采用高脂饮食建立鹌鹑高脂血症模型，分别测定正常对照组、高脂模型组、紫苏籽高剂量组(2.5g/kg)、低剂量组(0.83g/kg)血清中总胆固醇、甘油三脂、高密度脂蛋白、低密度脂蛋白、极低密度脂蛋白、丙二醛含量及超氧化物歧化酶的活性。

Some methods, such as hydrothermal method, sol-gel method and pulse laser deposition method, have been developed to prepare manganite nanomaterials. Studies on the nanoscaled manganites revealed that they exhibit a number of novel physical properties such as low field high magnetoresistance, superparamagnetism, and large coercivity and more promising applications as compared to the corresponding bulk compounds.

发展了低温水热法、溶胶凝胶法、脉冲激光沉积模板法等方法制备锰氧化物纳米材料，研究发现纳米级的锰氧化物表现出了一些不同于块材的奇特的物理性质：如低场高磁阻效应、超顺磁性、大矫顽力、低饱和磁化强度及表面自旋玻璃等。

As the RE ions concentration in groundwater increases or the surface sites on Mn-Fe oxide become saturated, RE ions may sorb via surface precipitation, then surface precipitation become the dominant sorption mechanism.

当离子浓度低时，形成表面络合物是占统治地位的吸附机制；当氧化物/水体系中离子浓度大时，金属离子除在表面形成表面络合物外，也可能形成表面氢氧化物沉淀，直到氧化物表面吸附点位被全部占满，这时表面沉淀则变成主要的吸附机制。

A method of production of a reduction resistant dielectric ceramic composition having a superior low frequency dielectric characteristic and further improved in accelerated lifetime of insulation resistance, specifically a method of production of a dielectric ceramic composition containing a main component including a dielectric oxide of a specific composition, a first subcomponent including a V oxide, a second subcomponent containing an Al oxide, a third subcomponent containing an Mn oxide, and a fourth subcomponent containing a specific sintering aid in a specific ratio, including a step of mixing at least part of the materials of the subcomponents excluding one or both of at least the material of the third subcomponent and material of the fourth subcomponent with the starting materials prepared for obtaining the material of the main component to prepare the pre-reaction material, a step of causing the prepared pre-reaction material to react to obtain a reacted material, and a step of mixing the materials of the subcomponents excluded when preparing the pre-reaction material with the obtained reacted material to obtain a dielectric ceramic composition.

本发明提供一种介电陶瓷组合物的制造方法，其中介电陶瓷组合物以特定的比例含有如下成分：含有特定组成的介电体氧化物的主成分，该主成分可以提供具有优异的低频率介电特性的、绝缘电阻的加速寿命进一步提高的耐还原性介电陶瓷组合物的制造方法，含有V氧化物的第1副成分，含有Al氧化物的第2副成分，含有Mn氧化物的第3副成分，以及含有特定的烧结助剂的第4副成分；该方法包含如下工序：将至少除去第3副成分的原料和第4副成分的原料的一种或两种的其它副成分原料的至少一部分，与为了得到主成分原料而准备的起始原料混合，准备反应前原料的工序；使准备的反应前原料反应而得到反应后原料的工序；以及在所得的反应后原料中，混合在准备反应前原料时除去的副成分原料，得到介电陶瓷组合物原料的工序。

The results show that the dissolution of Ag was restrained by forming of a silver suboxide film on the surface under low oxidant concentration and atmospheric pressure conditions (e.g., in NH_3-O_2-H_2O system); when the concentration of oxidant was high enough (e.g., in NH_3-H_2O_2-H_2O system), the leaching process was carried out without forming of the film and the rate of dissolution of Ag was controlled by a step of mass transfer.

结果表明，在常压下氧化剂浓度低时(如在NH_3-O_2体系中)，浸取反应受在Ag表面上生成的氧化物膜所阻碍；而在浓度足够高的氧化剂时(如在NH_3-H_2O_2体系中)，浸取过程可在不生成氧化物膜的条件下进行，此时Ag的溶解速度受传质步骤控制。

Moreover, its application as microwaveabsorber was primarily studied which lays a solid foundation for further investigations.The content, results and originalities of this research are as follows:1.3D self-assembled flowerlike hierarchical spheres of MnO_2 andγ-MnOOH nanobelts were prepared by a simple hydrothermal method, using KMnO_4 and H_2O as reactants, without any templates and surfactants.

本论文以倡导绿色环保为时代背景、以纳米科技的飞速发展为科学背景、以锰氧化物在二次电池和微波吸收领域的应用为着眼点，着重研究了各种不同形貌锰氧化物低维纳米材料的制备、生长机制及形貌控制，并初步研究了锰氧化物纳米材料的微波吸收特性，为进一步深入研究奠定基础。

The density, electrical contact resistance and hardness of these two alloys were tested. The results show that Ag and rare earth oxide appear in Ag-Y and Ag-Ce alloy after internal oxidation. The distribution of oxide particles is inhomogeneous and seriously conglomerated in Ag-Y2O3 and Ag-CeO2 sintered bulk, but they are dispersed and uniform in Ag matrix after severe plastic deformation. The relative densities of wire materials are larger than 99% and the electrical contact resistances are low (＜2.2 μΩcm).

结果表明：Ag-Y和Ag-Ce合金粉末经内氧化处理后生成Ag和稀土氧化物2种物相；Ag-Y2O3和Ag-CeO2材料烧结坯中氧化物颗粒分布不均匀且团聚严重，但材料经过大变形加工后，氧化物颗粒细小，均匀地弥散分布在银基体上；最终产品丝材的相对密度均达到99%以上，电阻率较低(＜2.2 μΩcm)。

In the ultra high vacuum activation, reduction of the vanadium oxide started at a lower temperature (250℃ to 300℃), and the reduction of the titanium oxides started at a higher temperature(300℃).

当吸气剂置于高真空激活时，钒的氧化物在较低的温度(250℃~300℃)开始被还原，钦的氧化物在稍高于钒的温度(300℃)也开始被还原，400℃时表面已经有大量的金属钦的存在，而Zr的氧化物在(100℃~400℃)激活过程中，则没有明显的变化。

与低氧化物相关的网络解释 [注：此内容来源于网络，仅供参考]

low-resistance interconnection：低电阻率连接

low thermal budget oxides 低温堆积氧化物 | low-resistance interconnection低电阻率连接 | Low-temperature process低温处理

protoveratrine：绿藜芦碱

prototype 原器原型 | protoveratrine 绿藜芦碱 | protoxide 低氧化物

protoxide：低氧化物

protective potential 保护电位 | protoxide 低氧化物 | proustite 淡红银矿

protoxide：氧化亚物

protoxide 低价氧化物 | protoxide 氧化亚物 | protoxide 低氧化物

subnormal temperature：低于设定值的温度

subnormal pressure 低于正常的压力 | subnormal temperature 低于设定值的温度 | suboxide 低氧化物

subornation：使人作伪证;贿赂他人作伪证

suborn 以贿赂或非法手段获取 贿买 | subornation 使人作伪证 贿赂他人作伪证 | suboxide 低氧化物

suboxide：低氧化物

本发明提供一种改善由MOSFET的栅极绝缘膜或存储设备中的电容的电极间绝缘膜所含有的碳、低氧化物(suboxide)、悬挂键(danglingbond)等引起的特性恶化,提高绝缘膜的特性的方法.

suboxide：低值氧化物

subornation 收买 | suboxide 低值氧化物 | subpena 传票

subcarbide：低碳化物

suboxide 低氧化物 | subcarbide 低碳化物 | subchloride 低氯化物

metallic oxides：金属氧化物

low-volatile bituminous coals 低挥发烟煤 | metallic oxides 金属氧化物 | methanation 甲烷化