- 更多网络例句与二极型的相关的网络例句 [注:此内容来源于网络,仅供参考]
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The company had introduced advanced High Speed Cluny Lace Braiding machine to produce and sell cotton or other materials thread braiding decorating trimmings with High Quality and Cheap prices.
公司创始于九十年代初期,励精图治于二00二年五月成立合资企业,引进日本先进的高密梭型编织机,主营生产,销售高品质的棉质,丝质及混纺型装饰性,实用性极强的编织花边,棉线编织花边网布及里巴花边。
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In Chapter three, by constructing a special partitioned matrix and studying the fast triangular factorization of its inverse matrix, we respectively give fast algorithms for the minimal norm least squares solutions of linear equations which coefficient matrices are n×m Toeplitz type matrices and Vandermonde-Loewner type matrices with full column rank.
第三章通过构造特殊分块矩阵并研究其逆矩阵的快速三角分解,分别给出了求以秩为m的n×m阶Toeplitz型矩阵和Vandermonde-Loewner型矩阵为系数阵的线性方程组极小范数最小二乘解的快速算法,并通过算例将新算法与已有的法方程组的方法和正交化方法作了比较。
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Antimony trioxide is a kind of pure white fine power, which is very low in impurity. Its cubic crystalloid is up to 98%.
用途 三氧化二锑是一种杂质含量极低的纯白微细粉末,其立方晶型达98%以上。
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At last of the paper, it's studied the relationship between the resistance of the pins of the pincushion 2D PSD and Gear theorem, and find the way to get the boundary resistance and square resistance of sensitive area from the resistance of the pins which can get the position nonlinearity rapidly.
最后,研究了枕型二维PSD的极间电阻与Gear定理之间的关系,可由具体器件的极间电阻确定其单位长度的边界电阻与光敏区方块电阻,从而可以用Gear定理来判别器件的位置线性度,克服了试片法以一概全的缺点。
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By using the laser-lift-off technique followed by plasma etching process to roughen the surface, the VLEDs with n-GaN surface roughening has been fabricated.
另一部份,则是在垂直式氮化镓发光二极体的表面制造粗化的效果,以来增进光从发光二极体中萃取出的效率,利用乾式蚀刻将表面制造出粗化的效果,再利用标准的黄光微影制成技术,因此成功的制造出n型表面粗化的垂直式氮化镓发光二极体,至於出光强度的增强量会随者表面粗化情况的不同有著30%?
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A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.
二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究,编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系,计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等,对评估MOS型集成电路电离损伤和加固方法研究,以及论文中开展的MOSFETs无损筛选方法研究奠定了基础;分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性,利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流,在不同栅氧厚度下随栅压的变化曲线,计算了热载流子效应造成的阈值电压漂移,研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想,具有重要的参考价值;开展了PN结和双极晶体管电离光电流研究,计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应,计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应,以及基区宽度对NPN晶体管光电流的影响,研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义;在国内首次开展了器件位移损伤的理论研究,分析了辐射产生的缺陷对电性能的影响,计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。
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That def1 and wild type tomato plants were attacked by female adult two spotted spider mite show: def1 plant was significantly sensitive to two spotted spider mite, meanwhile the number of eggs per plant on def1 in comparasion with that on wile type plant increased distinctly.
雌性成虫二点叶螨侵袭两叶—心期(15天龄)野生型和昆虫抗性缺失突变体def1植株,结果显示:def1植株对二点叶螨捕食较WT植株表现了极显著的敏感性,同时,在def1植株叶片上比其在WT植株叶片上的虫卵数明显增加。
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Methyl-5-ethyl-2-thiouracil,m.p.211°,was prepared according to the direc- tions of Johnson and Baily.4-Methyl-5-ethyl-uracil,m.p.236°,was formed in a 81% yield from 4-methyl-5-ethyl-2-thiouracil by boiling the latter with an aqueous solution of monochloroacetic acid.4-Methyl-5-ethyl-uracil reacted with phosphorous oxychloride and phosphorous pentachloride,giving 4-methyl-5-ethyl-2,6-dichloropy- rimidine in a 79% yield.
14-甲基5-乙基-2,6-二氯代嘧啶曾用磷醯氯和五氯化磷与其相应的2,6-二羟基嘧啶作用制取。(2)4-甲基-5-乙基-2,6-二氯代嘧啶与醇钠作用,极易转变成4-甲基-5-乙基-2,6-二烷氧基嘧啶。(3)4-甲基-5-乙基-2,6-二甲氧基嘧啶和2-氧代-3,4-二甲基-5-乙基-6-甲氧基嘧啶在高温时重排成其稳定构型的的异构体:1,3,4-三甲基-5-乙基-2,6-二氧代嘧啶。
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Voltage Source and Current Source, Thevenin Theory, Trouble Shooting, Characteristic Curve of Diode, Diode Models, Rectifier Circuits, Input Filtering Capacitor, Voltage Multiplier Circuits, Limiter and Clipper Circuits, DC Clampers and Peak-to-peak Detectors, Zener Diode, Zener Diode Rectifier, Photoelectric Devices, Collector-Emitter Junction, Transistor Characteristics of common-emitter, Base Bias, LED Dirver, Establishing a Stable Q-point, PNP Transistor Biasing, Transistor Biasing, Coupling and By-Pass Capacitors, AC Emitter Resistance, Common-Emitter Amplifier, Other Common-Emitter Amplifiers, Cascaded Common-Emitter Amplifiers, AC Load Line, Emitter Follower, Class B Push-pull Amplifiers, JFET Characteristic Curve, JFET Biasing, JFET Amplifier, VMOS Circuit, Differential Amplifier, Operational Amplifier, Non-inverting Feedback, Negative Feedback.
电子学实验( S0704)(1,1)/应用电子学实验( S0472)(1,1)电压源和电流源、戴维宁定理、故障排除、二极体特性曲线、二极体近似模型、整流电路、电容-输入型滤波器、倍压电路、限制器电路和峰值检测电路、直流定位器与峰对峰检测器、齐纳二极体、齐纳二极体整流器、光电元件、集射极接面、集极特性曲线、基极偏压、LED驱动器、建立一个稳定的工作点 Q 、 PNP 电晶体偏压、电晶体偏压、耦合及旁路电容、交流射极电阻、共射极放大器、其他 CE 放大器、串接共射极放大器、交流负载线、射极随耦器、 B 类推挽式放大器、 JFET 特性曲线、 JFET 偏压、 JFET 放大器、 VMOS 电路、差动放大器、运算放大器、非反向电压回授、负回授。
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In chapter 4 and 5, we have applied the high density ITO nanorods on GaN/InGaN sapphire-based LEDs and Vertical-Injection LEDs, respectively.
而在论文的第四章第五章,我们将高密度分布的氧化铟锡奈米柱薄膜应用在氮化镓蓝宝石基板型发光二极体和垂直注入型发光二极体上。
- 更多网络解释与二极型的相关的网络解释 [注:此内容来源于网络,仅供参考]
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beat frequency:差频
一、简介 液晶显示器的背光源有两种,一种是以发光二极体 (LED)作为显示器的背光而且无法同步驱动功率开关,形成电路的差频(beat frequency)现象,导致电磁干扰光方面,采用断续脉波型(burst m ode)的调光方法,其主要系采用固定频率与固定
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Black Magic:黑魔法
一年苗3元 二年苗 8元611 黑魔法(Black Magic) 美国育成,极黑红色,花瓣厚重,具腊质感有亮光,多数为玫瑰型重瓣,偶然出现不规则的半重瓣,大到巨型花,象黑红绸缎一样华丽光亮,堪称茶花中的黑宝石,是目前世界上花色最黑的茶花品种之一.
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minimum modulus principle:极小值原理
最小模 minimum modulus | 极小值原理 minimum modulus principle | 二次型的极小值 minimum of quadratic form
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steady state error:稳态误差
面对阶梯型输入讯号(Step input),系统反应的稳态误差(Steady state error)呈现了系. 统的什麼特质? 稳定性. 反应速度 ...将二极体方向到过来,重复上面步骤. 结. 果有何差别?为什麼? 全波整流器. 全波(full-wave)整流电路可以让正和负半周期的弦波讯号都通过,
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diarch:二极型 二原形
diara /河心沙洲/ | diarch /二极型/二原形/ | diarchial /两头政治的/
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diarch:二原形
diarch 二极型 | diarch 二原形 | diarchial 两头政治的
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ketal:缩酮
水型油墨中加入可水解的挥发性缩酮(Ketal)也可防止油墨酸败. 例如2,2-二甲氧基丙(或丁)烷,2,2-二乙氧基丙(或丁)烷等. 在酸存在下,缩酮是极易水解的. 每克分子缩酮水解后可产生一克分子酮和两克分子醇.
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Saprolegnia ferax:水 霉
这种现象在菌类中也有,如水霉(Saprolegnia ferax)中存在二等极毛的游动孢子和二侧毛的游动孢子,在半知菌侧孢[霉]属和子囊菌组织孢浆菌属中存在酵母型和菌丝型等;(5)由于季节不同个体形表现不同,如蝶类的春型和夏型.