upper growth

upper growth的基本解释

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上木

与upper growth相关的网络例句 [注：此内容来源于网络，仅供参考]

Based on the system feedback archetype mode theory, the dissertation introduce the upper limit stepwise generation and elimination method of the system pullulate upper limit mode, construct the five upper limit archetype mode such as: market demand upper limit archetype mode, human resource upper limit archetype mode; fund upper limit archetype modes; technology innovation upper limit archetype mode; government support upper limit archetype mode ;By combining the five upper limit archetype mode ,we can attain a electronic information industry developmental pattern system upper limit archetype mode.

利用系统科学反馈基模分析理论，提出了系统成长上限模型上限逐步生成与消除法，通过构建江西电子信息产业市场需求成长上限子基模、人力资源不足成长上限子基模、政府支持有限成长上限子基模、资金不足成长上限子基模、创新能力不足成长上限子基模等5个基模，并对其做并运算，得到了江西电子信息产业系统成长上限基模，刻画了资金、市场、技术创新、人才与政府支持相互制约的关联关系。

The fiber length has only little influence on the basic density within the growth rings, and significant correlation at 0.01 levels was found between the basic density and the fiber length among the different rings. Only slight negative correlation was found between the basic density and the fiber width within the growth rings, but significant positive correlation at 0.01 levels was indicated between the basic density and the fiber width among the growth rings, contrary to that of fiber length. It was demonstrated that significant positive correlations at 0.01 levels between the basic density and fiber double wall thickness, fiber length to width ratio and double wall thickness to diameter ratio, significant negative correlations at 0.01 levels between the basic density and fiber diameter and diameter to width ratio, only slight negative correlation between the basic density and fiber width both in the same growth rings and among the different growth rings. No significant correlation was found between the basic density and the vessel morphological features, nor was the tissue proportion in the same growth rings. But among the different rings, it was found there was significant positive correlation at 0.01 levels between the basic density and the fiber proportion among the different rings, and significant negative correlation at 0.01 levels between the basic density and vessel-elements proportion and ray proportion, only slight negative correlation between the basic density and the parenchym proportion. Significant or no significant negative correlation was found between the basic density and the microfibril angle in the same growth rings, but significant negative correlation was found between the basic density and the microfibril angle among the different growth rings.

生长轮内纤维长度对基本密度的影响不大，而在不同生长轮间纤维长度与基本密度达极显著正相关，纤维宽度与此相反，同一生长轮内纤维宽度与基本密度极显著负相关，不同生长轮间只有微弱负相关；基本密度与纤维双壁厚、长宽比、壁腔比在生长轮内和生长轮间均呈极显著正相关，而与胞腔直径、腔径比均呈极显著负相关，仅与纤维宽度呈微弱的负相关；导管形态对基本密度的影响不显著；同一生长轮内组织比量对基本密度的影响也不显著，但不同生长轮间基本密度与纤维比量呈极显著正相关，与导管比量和木射线比量呈极显著负相关，与轴向薄壁细胞比量仅呈不显著负相关；生长轮内基本密度与微纤丝角呈显著或不显著负相关，但在生长轮间这种负相关达到极显著水平。

By the combination of experimental results with theory of crystal growth, some growth models and growth mechanisms were proposed. Research results confirmed that pillar-shaped TaC whisker with spherical droplet at the end grew via a vapor-liquid-solid mechanism, pillar-shaped whisker with pyramid-like end was formed via a vapor-solid mechanism, awl-shaped TaC whisker with zigzag end formed via a liquid-solid mechanism, awl-shaped TaC whisker with growth step at the end has a growth mechanism of screw dislocation mechanism. The growth mechanism of dumbbell-shaped MgO nanowhisker and NaCl particle-decorated MgO nanowhisker is VS; C and MgO powder-yielded MgO nanowhisker was formed via a VLS mechanism, Mg powder-yielded MgO microwhisker and MgO microsized or nanosized crystal sheet grew via a VS mechanism. In the Si and SiO〓 nanostructures, Si nanowires formed in higher-temperature zone grew via oxide-assistant mechanism, while Si nanowires or nanorods formed in lower-temperature zone have a growth mechanism of VLS, and the growth mechanism of SiO〓 nanowires is VS.

研究确定呈平直柱状且头部带有球形颗粒的TaC晶须是通过气-液-固机制生长；头部呈之字型的锥状TaC晶须则通过液-固机制生长；晶须头部为四棱锥状的粗长TaC晶须的生长机制是VS机制；顶端呈锥状且有生长台阶的TaC晶须通过螺位错机制生长；哑铃状氧化镁晶须和氯化钠颗粒修饰的氧化镁纳米晶须的生长机制是气-固机制：当采用C+MgO粉提Mg源时形成的氧化镁纳米晶须的生长机制是VLS，而采用直接热蒸发Mg粉时得到的氧化镁微米晶须的生长机制为VS，纳米和微米晶片的生长机制均为VS机制；在高温区，硅纳米线的生长机制是助氧化机制，在低温区硅纳米线和纳米棒的生长机制是VLS机制，而氧化硅纳米线的生长中VS机制占主导地位。

与upper growth相关的网络解释 [注：此内容来源于网络，仅供参考]

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