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threshold voltage的中文,翻译,解释,例句

threshold voltage

threshold voltage的基本解释
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[计] 阈值电压

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更多 网络例句 与threshold voltage相关的网络例句 [注:此内容来源于网络,仅供参考]

Unit 22 400vac low voltage distribution pen busbar unit 22 400vac low voltage distribution cubicle lighting.plug and heating unit 22 400vac low voltage distribution measuring and ac-distribution unit 22 400vac low voltage distribution 220vdc control2 unit 22 400vac low voltage distribution control circuit breaker unit 22 400vac low voltage distribution automatic interconnection2 unit 22 device list unit 22 400vac low voltage distribution cubicle lighting.plug anh heating unit 22 400vac low voltage distribution ac/dc supply control unit 22 400vac low voltage distribution cb supply 1 control unit 22 400vac low voltage distribution cb coupling control unit 22 400vac low voltage distribution cb supply 2 control unit 22 400vac low voltage distribution cb supply 1 control unit 22 400vac low voltage distribution control unit 22 400vac low voltage distribution high pressure pump.bearing de control unit 22 400vac low voltage distribution stillstand heaters control control unit 22 400vac low voltage distribution oil mist suction device de control unit 22 400vac low voltage distribution h press pu.bearing de stand-by control unit 22 400vac low voltage distribution oil mist suction device nde control unit 22 400vac low voltage distribution indication unit 22 400vac low voltage distribution automatik input unit 22 400vac low voltage distribution circuit diageam unit…400vac low voltage distribution front view unit…400vac low voltage distribution inside view unit…400vac low voltage distribution cubicle view gauge board cover sheet gauge board front view gauge board inside layout gauge board fower supply gauge board cubicle lighting/heating gauge board 24vdc distributidn gauge board fault indication lamps gauge board fault messages to control gauge board temperatures thrust bearing gauge board temperatures de/nde guiide bearing gauge board temperatures de/nde bearing oil reservoir gauge board temperatures cold air from coolers gauge board display temperatures cooler 1-10 gauge board display temperatures cooler 11-20 gauge board temperatures hot air from coolers gauge board display tem.

单位 22 400 vac 低的电压分配钢笔 busbar单位 22 400 vac 低的电压分配小卧室 lighting.plug 和暖气单位 22 400 vac 低的电压分配测定和 ac-分配单位 22 400 vac 低的电压分配 220 vdc control2单位 22 400 vac 低的电压分配控制线路断路器单位 22 400 vac 低的电压分配自动机械 interconnection2单位 22本装置目录单位 22 400 vac 低的电压分配小卧室 lighting.plug anh 暖气单位 22 400 vac 低的电压分配 ac/直流补给控制单位 22 400 vac 低的电压分配 cb 补给 1 控制单位 22 400 vac 低的电压分配 cb 联结控制单位 22 400 vac 低的电压分配 cb 补给 2 控制单位 22 400 vac 低的电压分配 cb 补给 1 控制单位 22 400 vac 低的电压分配控制单位 22 400 vac 低的电压分配高度强迫 pump.bearing de 控制单位 22 400 vac 低的电压分配 stillstand 加热器控制控制单位 22 400 vac 低的电压分配油雾吸装置 de 控制单位 22 400 vac 低的电压分配 h 杂志报纸 pu.bearing de 台子-被控制单位 22 400 vac 低的电压分配油雾吸装置 nde 控制单位 22 400 vac 低的电压分配指示单位 22 400 vac 低的电压分配 automatik 输入单位 22 400 vac 低的电压分配线路 diageam单位…400休假低的电压分配前面视野单位…400休假低的电压分配内部看单位…400休假低的电压分配小卧室视野精确计量董事会掩护张精确计量董事会比较前面的视野标准度量在地面区划之内搭乘标准度量董事会 fower 补给标准度量董事会小卧室照明/暖气标准度量董事会 24 vdc distributidn标准度量董事会过失指示灯精确计量董事会过失信息控制标准度量董事会温度插入了举止标准度量董事会温度 de/ nde guiide 举止生的标准度量董事会温度 de/ nde 涂油水于水库标准度量董事会来自冷却器的温度冷空气精确计量董事会展览温度冷却器 1-10精确计量董事会展览温度冷却器 11-20标准度量董事会来自冷却器的温度热气精确计量董事会展览 tem。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究,编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系,计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等,对评估MOS型集成电路电离损伤和加固方法研究,以及论文中开展的MOSFETs无损筛选方法研究奠定了基础;分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性,利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流,在不同栅氧厚度下随栅压的变化曲线,计算了热载流子效应造成的阈值电压漂移,研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想,具有重要的参考价值;开展了PN结和双极晶体管电离光电流研究,计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应,计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应,以及基区宽度对NPN晶体管光电流的影响,研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义;在国内首次开展了器件位移损伤的理论研究,分析了辐射产生的缺陷对电性能的影响,计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

Research results show that under AC voltage the voltage distribution of Y-type insulator strings is extremely non-uniform and the voltage distribution curve of Y-type insulator string is similar to that of I-Type suspension insulator string; under DC voltage the voltage distribution of Y-type insulator string is also extremely non-uniform, the voltage undertaken by the insulators at the conductor side of Y-type insulator string is higher than that undertaken by other insulators of the same string, and as a whole the voltage distribution trend is that the voltage undertaken by the insulators at both ends of the Y-type insulator string is higher than the voltage undertaken by the insulators at the middle of the same insulator string.

研究结果表明:在交流电压下,Y型绝缘子串的电压分布极不均匀,其电压分布曲线和交流悬垂I串类似;在直流电压下,Y型绝缘子串的电压分布极不均匀,绝缘子串导线侧绝缘子分担电压高于其它绝缘子,总体上呈现导线侧和杆塔侧两端高、中间低的分布趋势。

更多网络解释 与threshold voltage相关的网络解释 [注:此内容来源于网络,仅供参考]

threshold voltage:阈值电压

C注意事项-量和单位使用国际标准和国家法定计量单位一篇文章不要用一个符号表示两个或多个物理量,如用C同时表示常数和电容首次出现(公式)的符号应在其后说明物理意义量的符号一般为单个字母,如阈值电压(Threshold Voltage) 不能用TV ,应当用 Vt 组合单位的斜线不能多于1个,

threshold voltage:临限电压

收发器大多数时间处于关闭状态,因此断态电流(off-state current)与定期查寻通信设备所需的电流必须极低(<1~2μA). 在这两种情况下,...较高的载子移动率(Field mobility)、较低的截止电流(off-state current)与较低的临限电压(threshold voltage). 由以上这些参数得知,...

threshold voltage:门槛电压

可以从"资 撷取器"(data acquisition device) 位化后之资 中解析出"反应时间".取讯号转换间的二个门槛电压(threshold voltage)的时间 , 一般典型的门槛电压取讯"杂讯"处是 测"灰阶反应时间"(gray-level response time)的一个主要的问题,

threshold voltage:门限电压

需要注意的是,应变硅技术并未能解决晶体管门极微缩(scaling)的问题;当晶体管门极长度缩短,会使门限电压(threshold voltage)降低,进而产生"短通道效应"(short-channel effect),这时需要使用绝缘硅来控制这种效应的发生.

Vth threshold voltage:阈值电平

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