thin layer

thin layer的基本解释

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薄层, 薄膜层

与thin layer相关的网络例句 [注：此内容来源于网络，仅供参考]

However remarkable impacts were observed in the plantation in terms of community physiognomy,community structure,species composition,species richness,and biomass accumulation.1 Planting trees made community structure simple.Betula alnoidis plantation had three layers including a dominant arbor layer,a complex and well developed shrub layer and a poorly developed vine layer.The arbor layer contained few species and had a single layer.The mountain rain forest had 4 layers including the dominant arbor layer,shrub layer,grass layer and vine layer.The vine layer was well developed and very rich in species composition,and the arbor layer contained as many as 38 species that could be grouped into 3 layers.2 Sequenced by the important value,main species for the plantation and the nature forest were totally different,and the plantation had one dominant species while the nature forest contained many dominant species.3 Planting trees changed the community physiognomy.

但是人工种植西南桦林对群落的季相外貌、群落的结构、物种组成、物种丰富度以及生物量等方面有较大的影响。1人工造林使得群落结构简化，西南桦人工林的层次结构有3层，以乔木层占优势，并且有种类多而发达的灌木层，同时，藤本植物欠发达，但是乔木层树种单一，明显仅有一层；山地雨林的层次结构有4层，以乔木层占优势，还有灌木层、草本层和藤本植物，藤本植物种类多，十分发达；乔木层树种丰富，可达38种，乔木层还可分为3层。2人工造林较大程度地改变了群落的物种组成，根据重要值的大小排列，人工林和天然林的主要物种组成已经完全不同；并且人工林单优树种明显，而天然林就含有较多的优势树种。3人工造林改变了群落的外貌。

The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.

本发明公开一种高压N型金属氧化物半导体管，包括P型衬底，在P型衬底上设有P型阱和N型漂移区，在P型阱上设有P型接触孔、N型源及场氧化层，在N型漂移区上设有N型漏及场氧化层，其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层，在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。

The invention relates to an organic thin-film transistor of three-layer composite film insulated gate which comprises a substrate (1), a metal electrode (2), a organic semiconductor layer (6), a source/leakage electrode; and also comprises: a low dielectric constant polymer layer (3), a high dielectric constant oxide layer (4), a low dielectric constant polymer layer (5), three-layer composite film insulated gate is composed of the (3) layer, the (4)layer and the (5) layer.

本发明涉及三层复合膜绝缘栅的有机薄膜晶体管，包括衬底(1)，金属电极(2)，有机半导体(6)层，源/漏电极(7)；还包括：低介电常数聚合物层(3)，高介电常数氧化物层(4)，低介电常数聚合物层(5)，所述的(3)、(4)和(5)层构成三层复合膜绝缘栅。

与thin layer相关的网络解释 [注：此内容来源于网络，仅供参考]

thin petaled：薄花瓣的

thin layer plate 薄层板 | thin petaled 薄花瓣的 | thin section 薄切片

thin mints：塗巧克力的小点心

thin layer 薄层 | thin mints 塗巧克力的小点心 | thin paste 稀面团

thin-necked intestinal worm：(羊)细颈肠虫

thin-layer sample ==> 薄层样品 | thin-necked intestinal worm ==> (羊)细颈肠虫 | thin-out ==> 尖灭