suboxides

与suboxides相关的网络例句 [注：此内容来源于网络，仅供参考]

Only when the annealing temperature above 700K, the silicon suboxides convert to silicon oxides.

在该温度下反应表现为扩散控制机理。

Besides, there exists a activation barrier between the silicon suboxides SiO〓(x＜2) and SiO〓.

另外，由硅的低价氧化物生成SiO〓存在着活化势垒，只有当退火温度高于700K，Si的低价氧化物才转化为SiO〓。

The oxide layer is predominantly TiO2, which contains a small amount of suboxides TiO and Ti2O3 between the outmost layer and metallic substrate. The XPS analysis confirms that Al2O3 is located mainly in the outer surface of the modified layers, in which vanadium and vanadium oxide are not detected.

结果表明：随着注入离子能量的增加， Ti6Al4V合金表面改性层的深度明显增加，改性层的外层由一定厚度的TiO2组成，外层与内层基体之间存在Ti2O3和TiO； Al元素在改性层的外层以氧化物形式存在，且该氧化物趋于表面生长；在表面改性层的外层未发现V及其氧化物。