spontaneous emission

spontaneous emission的基本解释

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[化] 自发发射

与spontaneous emission相关的网络例句 [注：此内容来源于网络，仅供参考]

As to the type study, classification was adopted from different latitude. According to the different representation of spontaneous music, the behavior was classified into spontaneous singing, spontaneous body movement and spontaneous odyssey of the rhythm. According to different form of spontaneous music behavior, it can be classified into unceremonious spontaneous music behavior and formless spontaneous music behavior In the feature study, pleasantness, the unity of children's feeling, changing accord to the circumstances and suddenly occurring were adopted.

在对幼儿自发音乐行为的类型划分部分，研究者从不同纬度将幼儿自发音乐行为分别进行了划分：根据自发音乐行为的不同音乐表现方式，可以分为自发哼唱、自发身体舞动和自发性节奏探索；根据自发音乐行为的不同呈现形式，可以分为定形的自发音乐行为和不定形的自发音乐行为。

The study about the flux and index of gamma-ray loud blazars show:(1)there is significant correlation between the luminosities in gamma-ray and VLBI radio energy band;(2)there are strong anticorrelarions among the observed indices of soft X-ray, hard X-ray and gamma-ray. For the FSRQs, the whole X-ray emission was contributed by synchrotron self-Compton emission, for the HBLs, the X-ray emission was dominated by synchrotron emission while the soft X-ray emission is dominated by synchrotron emission and the SSC emission dominate the hard X-ray energy band for LBLs;(3) there are strong radio-radio and radio-optical flux correlations for the quasar 3C 273. The higher frequency emission leads those in lower frequency. The multi-band complex indices strongly correlated with the high frequency flux which implies that the object is becoming bright when the energy spectrum is harden.

通过对γ噪Blazar天体的谱指数、流量的相关研究，发现（1）51个样本blazar的γ射线光度与VLBI光度之间存在显著相关；（2）软X、硬X以及γ波段的观测谱指数之间存在较强的反相关，对FSRQs，无论是硬X射线还是软X射线的辐射都是逆康普顿辐射的贡献，而对于HBLs来说，则是同步辐射的贡献，对LBLs，在软X射线波段以同步辐射贡献为主，在硬X射线能区以逆康普顿贡献为主；（3）3C 273的射电各个波段以及光学之间存在强相关，高频辐射一直领先低频辐射，3C 273的多波段复合谱指数和高频流量之间存在强的反相关，意味着当能谱变硬时对象变亮。

In this dissertation, InGaAs/InGaAsP/InP MQW microdisk laser and its characterization were presented. Some conclusions are as following: the characteristics of lasing threshold was discussed by using rate equation. The dependent relations between threshold and cavity volume, spontaneous emission coupling efficiency β were investigated. The whispering gallery mode and spontaneous emission in a microdisk geometry were then studied. Almost all spontaneous emission was coupled into the lowest order TE mode when the normalized thickness of photonics well was between 0.15 and 0.5. The design principle and device process of InGaAs/InGaAsP/InP MQW microdisk laser were presented. The microdisk lasers with the diameter of 8μm, 4. 5μm and 2μm were succesfully fabricated by using etching techniques. The pulse lasing thresholds for the microdisk with the diameter of 8μm and 4. 5μm were 170μW and 15μW, a record results compared with the published in the literature. The cw lasing threshold for a 2-μm-diameter microdisk was only a few μW. We haven't found similar report up to now. To solve the problem of directional output in a microdisk laser, the power coupling efficiency in a double disk geometry was investigated with the theory of waveguide mode couple. A new structure of electrically pumped microdisk laser with output waveguide was designed, making a foundation for the practical use of microdisk laser.

本文主要研究InGaAs/InGaAsP/InP多量子阱半导体碟型激光器的研制和特性表征，并取得如下结果：利用速率方程理论讨论了激光器激射阈值的特性，分析了阈值与腔体积和自发发射耦合系数β之间的关系；讨论了微碟光子阱结构中的自发发射特性和微碟中WGM模式特性；光子阱结构在其归一化厚度在0.15-0.5之间时，几乎全部自发发射进入到最低阶TE模式中；研究了InGaAs/InGaAsP/InP多量子阱微碟激光器的结构设计原理和器件的制备工艺；利用刻蚀方法成功制备出直径分别为8μm、4.5μm、2μm的碟型微腔激光器；直径8μm和4.5μm的微碟脉冲光泵浦激射阈值分别为170μW、15μW，是目前所见文献报导中比较低的；直径2μm的微碟连续光泵浦激射阈值仅几μW，目前尚未见到达到类似结果的研究报导；为解决微碟激光器激射光定向引出的问题，通过波导耦合模理论分析了双层碟之间功率耦合效率；据此设计了新型带耦合输出波导的电泵浦微腔激光器，为进一步研制可实用的电泵浦微腔激光器打下基础。

与spontaneous emission相关的网络解释 [注：此内容来源于网络，仅供参考]

spontaneous emission：自发放射

一个光子与半导体内电子的交互作用,可分为吸收、自发放射(spontaneous emission)及受激放射(stimulated emission). 在半导体材料内,通常有二个能带,即导带(边缘能阶为Ec)及价带(边缘能阶为Ev),其间之能差谓之能隙(Eg=Ec-Ev). 当半导体被光照射,

spontaneous emission：自发辐射

当电子与空穴复合而产生光时,这些光被称为自发辐射(Spontaneous Emission),其光的方向如图5(a)所示,是多方向的,这是发光二极管的发光特性. 但是,如果发出的光是激发辐射(Stimulated)的,如图5(b)所示其方向一致,则此种元件被称为半导体激光二极管(LD:Laser Diode).

spontaneous emission：自发发射

spontaneous crack propagation 自发裂缝传播 | spontaneous emission 自发发射 | spout 瘤口

spontaneous emission：自發射

spin-orbit splitting 自旋-軌道分裂 | spontaneous emission 自發射 | spontaneous fission 自發[核]分裂= 自發裂變

amplified spontaneous emission：放大自发射

"倍功发电机","amplidyne generator" | "放大自发射","amplified spontaneous emission" | "放大器;增幅器","amplifier"