soi-disant [,swɑ:di:'zɔŋ]

soi-disant的基本解释

adj.

自称的, 自命的

与soi-disant相关的网络例句 [注：此内容来源于网络，仅供参考]

The interdigitated SOI DTMOSFET's, and SOI DTMOS-based invertors and ring oscillators are also designed. By fabricating these experimental devices and circuits, a set of submicron thin film SOI CMOS and SOI DTMOS process technology, which can meet the aerospace application requirements, has been developed.

为满足航天用微电子电路的抗辐射、高速、低功耗、高可靠的要求，开展了适于超低压工作的SOI DTMOSFET的研究工作，对DTMOS器件的微观工作机理进行了分析和讨论，揭示了SOI DTMOS器件电学性能优于常规SOI MOS器件的物理本质，以及DTMOS器件与电路在航天领域的巨大应用潜力。

A novel SOI high voltage device with a compound dielectric buried layer is proposed,and an analytical model for its electric field and potential is established.A unified criterion of RESURF condition for CDL SOI and a uniform dielectric buried layer SOI device is given.

提出复合介质埋层SOI(compound dielectric buried layer SOI，CDL SOI)高压器件新结构，建立其电场和电势分布的二维解析模型，给出CDL SOI和均匀介质埋层SOI器件的RESURF条件统一判据。

In this way,the vertical breakdown voltage of SOI LDMOS with 2μm thickness SOI layer can be improved by 43%.The on-state resistance is lowered by 24% because of the higher impurity concentration of the SOI surface.

采用这种方法制得的SOILDMOS的纵向击穿电压提高了43%，导通电阻降低了24%，这是因为它的表面浓度更高。

与soi-disant相关的网络解释 [注：此内容来源于网络，仅供参考]

soi-disant：自称的

soho 哈! | soi-disant 自称的 | soigne 整齐的