silicon wafer

silicon wafer的基本解释

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硅片

与silicon wafer相关的网络例句 [注：此内容来源于网络，仅供参考]

Five novel torsion-mirror optical actuators including double-beam thickness differential structure with single torsional axis, double flexible folded-beam structure with single torsional axis, double-beam vertical torsion comb structure with single torsion axis, four-beam differential compound-micromirror structure with double torsional axis and the combined structure of the four basis forms above, are brought forward. All of these devices could be fabricated by the same silicon micromachining process we have developed. The deformation compensation design with local enhancement for the thin torsional beam which is the key structure of these devices is also put forward to improve the reliability. The three-dimension solid model and two-dimension reduced order model of the torsion-mirror optical actuator are established and then the numerical simulations for evaluating the device characteristics of the statics, dynamics, electrostatic field, mechanical and electrostatic coupling, fluid and solid coupling are carried out to optimize the structure design. Furthermore, three optical fibre clamping structures which could be integrated monolithicly are designed and analyzed to improve the optical coupling capability. 4. Three flexible process flows combined with bulk silicon micromachining and surface silicon micromachining are brought forward to fabricate these novel single-crystal silicon or polysilicon torsion-mirror optical actuators by using the same lithography masks for both SOI wafer and regular silicon wafer. A series of important process experiments are carried out to optimize the process parameters and the process flows. Some novel and typical process phenomena which occurred during the microfabrication are analyzed and then the corresponding solutions are put forward. 5. A MEMS dynamic testing system which exploit blur image synthetic technique, stroboscopic image matching technique, stroboscopic mirau microscopic interferometry technique and microscopic laser dopper vibrometer technique is set up to measure three-dimension and six-freedom micro motions of any MEMS devices with nanometer resolution.

在对硅微机械扭转镜光致动器的光机电特性系统地理论研究的基础上提出了硅微机械扭转镜光致动器的结构设计准则。3、提出了单轴双梁厚度差分结构、单轴双柔性折叠梁结构、单轴双梁垂直扭转梳齿结构、双轴四梁差动复合微镜结构以及以上四种基本结构组合后的衍生结构等五种工艺加工技术兼容的新型的硅微机械扭转镜光致动器，对器件关键结构薄厚度、高耐疲劳扭转梁进行了局部加强的变形补偿设计，建立了器件的三维实体模型以及两维降阶模型，对提出的新结构硅微机械扭转镜光致动器进行了系统的静力学、动力学、静电场、力电耦合和流体固体耦合的建模仿真与优化设计，同时设计并分析了三种可实现单芯片集成的弹性光纤定位夹紧结构。4、提出了组合体硅微加工技术与表面硅微加工技术、兼容同一套光刻版图、可分别基于SOI 晶片和普通Si 晶片、适应于制造提出的各种新结构单晶硅和多晶硅硅微机械扭转镜光致动器的三套柔性加工工艺流程，开展了一系列重要工艺步骤的单项工艺试验，对工艺流程与工艺参数进行了优化，针对加工过程中出现的具有普遍意义的典型工艺问题进行了讨论和分析，并提出了解决方法。5、创新性地将模糊图像合成技术、频闪图像匹配技术、频闪Mirau 显微干涉技术与显微激光多普勒测振技术有机结合，建立起了一套周期运动测量与瞬态运动测量相结合、单点运动测量与全视场运动测量相结合、满足不同MEMS 器件各种动态测试要求的集成的MEMS 三维六自由度微运动精密测量系统。

Korea put the company at electric power control device - the general type STR (thyratron thyristor power controller) CPU upgrade to system memory type, and early in 2003 to develop cutting-edge new product type constant current, constant voltage type collectively referred to as STR (may silicon-controlled thyristor power controller) the inherent brand. In 2000 to develop the motor starting device - soft starter motor new products and the inherent SMC brand available at the area of power control both at home and abroad alike. Market in 2000 and 2002 patent SSC (packaged solid-state thyratron power controller), as well as sales from the company since its inception back filter with Pulse Timer and other products in the same trade firmly occupy The largest market. Also in 2002 the development of the supply of silicon wafer characterization equipment and sub-Plasma Ion Plating with the most cutting-edge power supply devices and so on, so if the company has high-speed development.

本公司在韩国把电炉电力控制装置-一般型STR升级为CPU系统内存型，与2003年初新开发的尖端产品恒电流型、恒电压型统称为STR 这一固有品牌。2000年开发电动机启动装置-电动机软启动器新产品并以SMC这一固有品牌面市，在电力控制领域受到国内外的一致好评。2000年面市并2002年取得专利的SSC(封装固态闸流功率控制器)，还有从公司创立初期销售至今的 back filter 用 Pulse Timer等产品在同行业中牢牢占据着最大的市场。2002年又开发供应硅wafer分段定性装备及Plasma Ion Plating用最尖端动力供应装置等，因此公司具备了高速发展的依据。

ABSTRACT The preparation of photoluminescent porous silicon wafer and the seperation of photoluminescent porous silicon films from silicon wafer were reported in this paper.

本文从发光多孔硅的制备出发，通过系统的分析测试，对多孔硅的发光机理进行了探讨。

与silicon wafer相关的网络解释 [注：此内容来源于网络，仅供参考]

silicon, local oxidation of (LOCOS)：区域性硅片氧化

silicon wafer 硅晶圆 | silicon, local oxidation of (LOCOS) 区域性硅片氧化 | silicon-dioxide layer 二氧化硅层

Silicon tetrachloride concentration：四氯化硅浓度

Silicon substrate硅衬底 | Silicon tetrachloride concentration 四氯化硅浓度 | Silicon wafer:硅晶片

silicon vidicon：硅光导摄象管

silicon unilateral switch ==> 硅单向开关 | silicon vidicon ==> 硅光导摄象管 | silicon wafer ==> 硅片