silent films

silent films的基本解释

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无声电影

与silent films相关的网络例句 [注：此内容来源于网络，仅供参考]

The results showed that the TiN andN films are polycrystalline phase. The properties and structure of TiN films are mainly determined by the N2 mass flow rate, and as the N2 mass flow rate increases, the structure of the TiN films transforms to f.c.c. type leading to better the properties of films. The presence of negative bias voltage can optimize the grain of TiN films, lower the defect proportion and denser the films, which improves the hardness of films. The TiN films conform to the free carrier absorption mechanism and there are many of free electrons with lower N content in TiN films. With the increase of N content, the quantity of free electrons and reflectivity of films decrease, and the plasma frequence shifts to the lower energy, which leads to the regular change of colors of films from silver, yellowy, golden to yellow-red, meanwhile the lightness of films decreases. The goldenN film consists of TiN and ZrN phase, but belongs to a sigle f.c.c. structure with (111) preferred orientation. The Zr-doping dosen't change the position of the valance band, conduction band and forbidden band ofN film, but leads to the presence of new energy levels, which is the reason thatN film remains golden. The transparent hard films with good corrosion resistance and high hardness have been prepared and the further reseachs showed that the grain size of those films is by far smaller than the wave length and the width of forbidden band of those films is very broad, is the reasons that those films are transparent.

研究表明：氮化钛和N 薄膜为多晶态，氮流量决定了氮化钛薄膜的结构和性能，增加氮流量能使氮化钛薄膜的结构向面心立方结构转变，从而得到性能良好的氮化钛薄膜；施加负偏压能优化氮化钛晶粒和减少薄膜中的缺陷，使膜层变得更致密，从而提高薄膜硬度；氮化钛主要遵循自由载流子光吸收，氮含量较少时薄膜中的自由电子数目较多，随着氮含量的增加，薄膜中的自由电子数目不断减少，反射率逐渐降低，等离子体频率向低能端移动，从而使薄膜颜色出现规律变化，由金属色银白色到淡黄、金黄再到红黄，并且薄膜亮度呈下降趋势；金黄色的N 薄膜中存在TiN 和ZrN 的分离相，但其为单一的面心立方结构并具有(111)面择优取向；相对于TiN 薄膜，Zr 掺杂后，并没有使薄膜的导带、价带和禁带发生变化，只是在TiN 禁带内增加了新能级，这也正是掺杂Zr 后，薄膜仍

XRD,X-ray EDS analysis,AFM and Fourier transform infrared spectroscopy were employed to characterize PbSe thin films. The results show that all of the films were heteromorphy and the growth temperature has effect to the diffract peaks of the films. The contents of PbSe thin films by PLD consisted with the targets,and realizing thin films deposited with same constitutes; the films had rather flatness surface and compact structure; the peak-to-tail roughness of PbSe thin films surfaces was less than 200nm;they had sensitivity to light of a specified wavelength and obvious absorption edge at 5μm corresponding to band-gap width of PbSe thin films;light of wavelength less than 5μm was strongly absorbed.

通过脉冲激光沉积法在Si(111)和SiO2玻璃基片上制备了PbSe薄膜。X射线衍射、X射线能谱、原子力显微镜、傅里叶变换红外光谱仪测试结果表明：所有制备的薄膜都为多晶薄膜，发现薄膜生长温度对薄膜衍射峰有一定影响；PLD法制备的薄膜的成分与靶材的基本一致，实现了同组分沉积；所有薄膜表面比较平滑，表面不平整度小于200nm，结构比较致密；PbSe薄膜对红外光具有敏感的响应特性；在波长为5μm处存在有明显的吸收边，此吸收边对应于直接带隙PbSe材料的禁带宽度；对应于波长小于5μm的红外光，PbSe薄膜存在有明显的强吸收。

The results showed that the constitutes of thin films by PLD consisted with the targets ,and realizing thin films deposited with same constitutes;All of the films were heteromorphism;It was revealed that the effect of the growth temperature was significant to the diffract peaks of the films and that of the substrate was negligible;the films had rather flatness surface and compact structure;the peak-to-tail roughness of PbSe thin films surfaces was less than 200nm and that of ZnO and Mn doped ZnO films surfaces was less than 100nm;Flat degree was improved with falling of growth temperature and laser energy .

测试结果表明：PLD法制备的薄膜的成分与靶材的基本一致，实现了同组分沉积；所有制备的薄膜都为多晶薄膜，发现薄膜生长温度是影响薄膜衍射峰的主要因素，基片类型对此影响不明显；所有薄膜表面比较平滑，结构比较致密；其中PbSe薄膜的表面不平整度小于200nm，ZnO和Mn离子掺杂ZnO薄膜的表面不平度小于100nm；生长温度和激光能量降低能提高薄膜表面的平整度。

与silent films相关的网络解释 [注：此内容来源于网络，仅供参考]

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