rapid memory

rapid memory的基本解释

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[计] 快速存储器

与rapid memory相关的网络例句 [注：此内容来源于网络，仅供参考]

Through the discussion of the study history of memory, the research problems and the significance of this study were brought forward, the concept of memory was clarified, the latest research of brain science was reviewed; On this basis, memory types and its measurement, memory process and its rules were studied documentarily and generalized systematically; This research analysed emphatically and concluded general and special methods of memory, the functions, usage means and applied scopes of many kinds of scientific memory methods were explored deeply with some typical psychology experimental results; Then affects of objective factors included external environment and material characteristics, subjective factors such as purpose, attention, emotion, knowledge, confidence and so on , were examined deeply; At last, it studied and analysed the cultivation and training of memory, practical usage of scientific memory methods, and put forward educational suggestions and training measures.

首先从记忆的研究历史切入本研究的问题背景与研究意义，阐明了记忆的概念、综述了记忆脑科学方面的最新进展；在此基础上，对记忆的分类与测量、基本过程与规律进行了文献研究与系统概括；着重分析并归结出了记忆的一般方法与特殊方法，结合代表性的心理学实验成果深入分析了各种科学记忆方法的功用、具体操作方法及应用范围；深入剖析了外部情境、材料特征等客观因素及目的、注意、情绪、知识、信心等主观因素对记忆的影响；最后在先前诸研究的基础上，对记忆的培养与训练及记忆术的实际应用加以分析和研究，提出了记忆培养训练的具体措施与教育建议，并实例说明了记忆术的具体应用。

The boundary of analytical model and statistical model is clearly divided in this performance model, and evaluation accuracy is improved. Secondly, based on embedded SRAM performance hybrid model, this article adopts bionics algorithm-ant algorithm to optimize hierarchical embedded SRAM structure. This method which adjusts memory system structure improves memory system performance. Finally, considering the factors such as memory cell area, power, delay and reliability, this article establishes static 6-T memory cell area, power, delay and static noise margin equations, analyzes 6-T memory cell device dimension constraints under "read upset" and "write upset", then proposes a method to enhance embedded SRAM performance by optimizing 6-T memory cell size. In order to realize embedded SRAM design and verify proposed optimization methods, this article takes the Garfield202 system chip as the platform, which embeds A720T processor and 20KB Scratch-Pad memory.

首先针对嵌入式SRAM结构，采用多元线性回归方法分析SRAM宏单元性能指标，采用解析方法分析控制电路延时，结合以上这两种方法建立嵌入式SRAM性能混合模型，该模型清晰划分两种建模方法的各自适用范围，提高了模型精度；其次以该混合模型为基础建立存储体性能目标函数，采用仿生优化算法—蚂蚁算法优化嵌入式SRAM结构，使之达到最优设计；最后综合考虑面积、功耗、速度以及可靠性等因素，建立静态6-T存储单元面积、功耗、延时以及静态噪声容限方程，分析了&读破坏&和&写破坏&的晶体管尺寸约束，优化了6-T存储单元尺寸，提高了嵌入式SRAM性能。

In this study, six campaigns around Anping tide gauge, Tainan, were successfully performed and the collected GPS buoy data were processed with four types of precise ephemeris provided by IGS, including final product, rapid product, ultra-rapid product and ultra-rapid product with the use of PPP technique. Comparing the PPP results with DGPS, the differences reach 3~5 cm in the horizontal and 10 cm in the vertical with final product; 6~8 cm in the horizontal and 15 cm in the vertical with rapid product; 15~20 cm in the horizontal and 30~40 cm in the vertical with ultra-rapid product; 2~3 m in the horizontal and 3~4 m in the vertical with ultra-rapid product. In addition, the collected data were also processed by DGPS techniques using different reference stations to analyze the effect of various baselines. The results show that accuracy degrades when the baselines increase.

本研究在台南安平潮位站旁进行6次GPS浮标施测，首先利用与GPS浮标距离不同之GPS参考主站来进行差分定位，分析基线距离对GPS浮标定位成果的影响，由实验结果可得出基线越长则定位准确度越低；再以IGS提供之最终产品、快速产品、超快速产品(Ultra-Rapid product)之观测部分observed half、超快速产品(Ultra-Rapid product)之预估部分四种不同发布延迟时间的精密星历与精密时表改正资料对GPS浮标进行精密单点定位解算，与传统差分相对定位方法定位结果进行比较后，得出使用最终产品之平面方向均方根误差(Root Mean Square Error， RMSE)可达3~5公分，而高程方向均方根误差可达10公分；快速产品之平面方向均方根误差可达6~8公分，而高程方向均方根误差可达15公分；超快速产品观测部分之平面方向均方根误差可达15~20公分，而高程方向均方根误差可达30~40公分；超快速产品预估部分之平面方向均方根误差可达2~3公尺，而高程方向均方根误差可达3~4公尺。

与rapid memory相关的网络解释 [注：此内容来源于网络，仅供参考]

rapid memory：快速存储器

1878random scan随机扫描 | 1879rapid memory快速存储器 | 1880raster graphics光栅图形

rapid memory：快速内存

快速内储存 rapid internal storage | 快速内存 rapid memory | 快速网络再连结 rapid network reconnect

rapid memory：快速记忆体

"快速内储存","rapid internal storage" | "快速记忆体","rapid memory" | "快速网路再连结","rapid network reconnect"

rapid random access memory：快速随机存取存储器

rapid printer 快速打印机 | rapid random access memory 快速随机存取存储器 | rapid response motor 快速响应电动机

rapid random access memory：快速随机存取内存

快速原型设计方法 rapid prototyping method | 快速随机存取内存 rapid random access memory | 快速储存 rapid storage