limiting surface

limiting surface的基本解释

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界面

与limiting surface相关的网络例句 [注：此内容来源于网络，仅供参考]

Typical electrical code requirements include classification for instrument s and/or limiting the surface temperature of heated resistance elements to a specified fraction of the autoignition temperature for the flammable gas.

典型的电力法规要求包括器具的分类，和/或把热电阻元件的表面温度限制在易燃气体的自燃温度的一个指定的分数。

This method overcome the problems of many supposition conditions in theory and difficulty in searching critical slip surface in 3D limiting equilibrium analysis; It uses the 3D FEM\'s stress field directly, differs from the practical value of 3D FEM strength reduction method used hypothesized load, and differs from the characteristic of the FEM with limiting equilibrium theory still to need to divide the columniation, and suppose the critical slip surface in advance.

该方法克服了三维极限平衡分析方法在理论上引入较多假设条件，且搜索临界滑裂面困难的问题；它直接采用三维有限元应力场，不同于三维有限元强度折减法基于虚拟荷载上得出的实用价值；同时异于沿用极限平衡理论的有限元法仍需要进行条柱划分，并事先假设滑裂面形状及位置的缺点。

The anode structure of CI-LIGBT is optimized by numerical simulation, and it is pointed out that segmented p〓 anode region surrounded by n〓 anode region is the key to improve the ability of current limiting, and the more deeper the n〓 anode junction relative to the p〓 anode junction, the more powerful the ability of current limiting is. The affection of the breakdown voltage BV〓 of the reverse biased p〓n〓 junction and the sample resistance upon the latching current, the latching voltage and the on-state voltage have been studied, and it is indicated that the tradeoff between the on-state voltage and the latching characteristics is the excellentest when BV〓 is 1. 1V so that its on-state voltage can be just only 0.6V higher than conventional LIGBT. It is also found that this device is especially suit to high temperature environment. Based on X. B. Chen's surface voltage sustaining structure using optimized variational lateral doping and Ludikhuize's multiple floating rings structure, high voltage LIGBT and is studied in this paper.

通过数值模拟，优化了CI-LIGBT的阳极区结构，指出采用被n〓阳极区包围的单元状p〓阳极区是提高该器件限流能力的关键，而n〓阳极区结深相对p〓阳极区结深越大，器件的限流能力越强；分析了反偏p〓n〓结击穿电压BV〓和取样电阻对器件闩锁电压、闩锁电流和导通压降的影响，得出BV〓在1.1V时器件导通压降和抗闩锁能力间的折衷关系最优，其导通压降仅比普通LIGBT高0.6V；分析了温度对LIGBT闩锁性能的影响，表明CI-LIGBT即使在450K的高温下也不会闩锁，尤其适用于高温工作环境。