isolation booth

isolation booth的基本解释

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隔音室

与isolation booth相关的网络例句 [注：此内容来源于网络，仅供参考]

The mechanical behavior of Shape Memory Alloys material is tested, and the constitutive model of the SMA is established. A kind of SMA combined rubber isolator is developed, and the isolation effect of the SMA combined rubber isolator for long-span bridge and tall building structures is numerically simulated, from which the adaptive isolation performance and the self-restoring capacity of the SMA combined rubber isolator are verified. A kind of SMA damper is developed, the mechanical behavior of the SMA damper is tested, and the model of restoring force of the SMA damper is established. The theory and method of adaptive control based on the SMA damper for the long-span bridge are built, and the effectiveness and reliability of the adaptive control for the long-span bridge using the SMA damper are verified through numerical simulation and model test. The MRF-04K type magnetorheological damper is developed, the mechanical behavior of the MR damper is tested, and the model of restoring force of the MR damper is established. The theory and method of adaptive control based on the MR damper for the long-span bridge and tall building structures are built, and the effectiveness and reliability of the adaptive control for the long-span bridge and tall building structures using the MR damper are verified through numerical simulation and model test. In addition, the theory and method of sub-structural damage identification for long-span bridge are derived, the influence of soil-structure dynamic interaction on the seismic isolation and control effects with different isolation and control measures and the damage responses and the sliding base-isolation of large structures under the excitation of underground explosion are investigated.

试验研究了形状记忆合金材料的力学性能，建立了SMA材料的本构模型；研制了一种SMA复合橡胶隔震支座，数值仿真分析了应用SMA复合橡胶支座的大跨桥梁和高层建筑结构的隔震效果，从而验证了SMA复合橡胶支座的自适应隔震性能及其震后自恢复能力；研制了一种SMA阻尼器，试验研究了SMA阻尼器的力学性能，建立了SMA阻尼器的恢复力模型，建立了基于SMA阻尼器的大跨桥梁结构自适应控制理论与方法，通过数值仿真与模型试验验证了大跨桥梁结构SMA阻尼器自适应控制的有效性与可靠性；研制了一种MRF-04K型磁流变阻尼器，试验研究了MR阻尼器的力学性能，建立了MR阻尼器的恢复力模型，建立了基于MR阻尼器的大跨桥梁和高层建筑结构的自适应控制理论与方法，通过数值仿真和模型试验验证了大跨桥梁和高层建筑结构MR阻尼器自适应控制的有效性与可靠性；还建立了大跨桥梁结构的子结构损伤识别的理论与方法，研究了土-结构动力相互作用对不同隔震和控制措施的减震控制效果的影响以及地下爆炸波作用下各类大型结构的灾害响应与滑移隔震。

Thirdly, a new type base isolation system, i. e., slide-limited friction base isolation system is presented in this paper. Based on this system, harmonic and subharmonic periodic response of S-LF subjected to harmonic motion is investigated by using Floquet theory. Dynamic response of sliding structure subjected to earthquake ground motion is calculated with a precise high order direct integration method, and the numerical results are presented in terms of maximum acceleration response spectra of supcrstructure and maximum sliding displacement response spectrum. By comparison with isolating effects of pure-friction base isolation system and resilient-friction base isolation system , it shows that the isolating characteristic of S-LF is superior to P-F and R-FBI. Through analyzing an engineering example, it is observed that the maximum inter-storey shear force and absolute acceleration of sliding structure to earthquake ground motion are very different from those of traditional structures.

提出了一种新型基础隔震模型，即带限位装置的摩擦隔震体系；基于此隔震模型，利用Floquet理论研究地面谐运动下S-LF结构的运动特性；并利用高精度的精细时程积分法，通过对地震作用下S-LF动力响应的计算，绘制了上部结构最大加速度反应谱和基底最大滑移量反应谱，并研究了各种结构参数对隔震的影响；通过与恢复力摩擦隔震系统和纯摩擦力滑移隔震系统的比较表明，S-LF的隔震性能优于P-F和R-FBI；对计算实例的分析发现，地震作用下S-LF结构的层间最大剪力和最大绝对加速度反应分布较一般传统结构有很大区别。

A semiconductor device including a high voltage element and a low voltage element, including: a semiconductor substrate having high voltage element region where the high voltage element is formed, and a low voltage element region where the low voltage element is formed; a first LOCOS isolation structure disposed in the high voltage element region; and a second LOCOS isolation structure disposed in the low voltage element region, wherein the first LOCOS isolation structure includes a LOCOS oxide film formed on a surface of the semiconductor substrate and a CVD oxide film formed on the LOCOS oxide film, and the second LOCOS isolation structure includes a LOCOS oxide film.

提供一种在确保高耐压元件的高耐压特性的同时使高耐压元件和低耐压元件具有良好特性的半导体装置。具有高耐压元件和低耐压元件的半导体装置包含：规定了形成高耐压元件的高耐压元件区和形成低耐压元件的低耐压元件区的半导体衬底；在该高耐压元件区设置的第一LOCOS隔离结构；以及在该低耐压元件区设置的第二LOCOS隔离结构。第一LOCOS隔离结构由在该半导体衬底的表面上形成的LOCOS氧化膜和其上形成的CVD氧化膜构成，第二LOCOS隔离结构由LOCOS氧化膜构成。

与isolation booth相关的网络解释 [注：此内容来源于网络，仅供参考]

isolation booth：隔音室

isolating 孤立的 | isolation booth 隔音室 | isolation ward 隔离病房