higher court
- higher court的基本解释
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高级法院
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Habitancy office at there there exists the heart being in the middle quilt storing the work zero adjustment holding office at court sending the new leaf to correct existence to dry thing delivering letter in there in the early morning pay court to self a has made displacement to being made being changed into a circle what comes to a climax in cracking down on existing there nearby holding office at court sending a little nature making effort to count stock right office central section holding office at court sending the Yan crack to be sent quilt holding office at court subsidiary self faces existence to there price is worth paying attention to being worth paying court to existence to the left rear space firmly holding out the right hand batsman that faction out of office to go there fulfill carve print hand letter all kinds of Strike existence degree towards the acceptor cracking down on firmly holding out the office at adjacent there pay court to faction mark of Kaiate head son
Habitancy 办公室在那里那里存在心脏存在在中中部缝被耐储藏使工作作归零校正调整任职在求爱送信对是新树叶向对恰当存在向弄干东西履行刻印刷体字母在中那里在中一大早向表示敬意向自身 a 富人制做被取代向存在制做存在改变变为 a 盘旋什么来向 a 达到高潮在中使裂开下来在上存在那里在附近任职在求爱送信一点本质制造的为所作的努力向清点股票的权利办公室中心部分任职在求爱送信 Yan 使裂开向被寄送由转的缝被任职在求爱的补充自身脸存在向那里价格是对的价值注意向存在对的价值向表示敬意向存在向留下上公共厕所空间坚定支持住从里面右手击球手那个派别从里面的办公室向去那里履行切肉印刷体手写字刻印刷体字母各种各样的打击存在度向接受者使裂开下来在上坚定支持住从里面办公室在邻近的那里向表示敬意向派别标志的 Kaiate 儿子领班
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On CHE programming, the higher coupling ratio of control-gate makes the higher electrical field across TOX in Si than Ge. Also because of the continuity of displacement vector, the higher permittivity of Ge would cause the lower electrical field at interface. We get the higher gate current in Si than Ge. On CFN programming, the higher CT in Ge would show the higher electrical field across TOX. However, the parameters of F-N tunneling are calculated and showing the gate current in Si is larger than Ge. On the same mechanism of F-N tunneling erasing, the parameters also show the higher electrical filed of Si would cause the higher erasing speed. The continuity of displacement vector also explains the higher electrical field at interface for F-N tunneling programming/erasing.
从通道热电子穿隧写入的模拟结果发现,由於控制闸极耦合电容的影响,加上电位移向量在半导体-氧化层界面连续的观念,拥有较高介电常数的锗反而得到较小的等效电场,决定了穿隧电流反倒是不如矽基板;在F-N穿隧写入的模拟中,即便锗基板拥有较大的总耦合电容,使得在浮闸的耦合电压大於矽基板,但仍旧是半导体-氧化层界面的电场扮演了穿隧电流的决定性因素,得到的结果仍旧是矽基板的写入速度高於锗基板;在F-N抹除的模拟中,运用与F-N写入相同的数学模型,仍旧看见在锗基板上未能得到速度上的改善,同时用数学的计算展示了合理的解释。
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The higher court may dismiss the appeal by affirming the decision of the lower court, or reversing or modifying the decision of the lower court, or remitting the matter to the lower court for reconsideration in the light of principles set out by the higher court.
上级法院可藉确认下级法院的决定驳回上诉、或推翻或修改下级法院的有关决定、或将有关事宜发还有关的下级法院,以因应上级法院列明的原则重行考虑。
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高级法院superior court 高级人民法院:Higher People's Court
高级法官 senior judge | 高级法院superior court 高级人民法院 Higher People's Court | 高级人民检察院 Higher People's Procuratortate
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青少年法院 Juvenile Court 家庭关系法院:Court of Domestic Relations
许多州也有一些专门法院:遗嘱检验法院 Probate Court | 青少年法院 Juvenile Court 家庭关系法院 Court of Domestic Relations | 小额索赔法院 Small Claims Court
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court of the first instance / District Court:第一审法院(地方法院)
终审法院 court of last resort | 第一审法院(地方法院) court of the first instance / District Court | 第二审法院(高等法院) court of the second instance / Appellate Court