high memory area

high memory area的基本解释

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高端内存区

与high memory area相关的网络例句 [注：此内容来源于网络，仅供参考]

It analyses the essential factors, structure, environment as well as functions of high-tech corporation system and compares the similarities and differences between high-tech corporation system and traditional corporation system; it analyses characteristics in each stage of high-tech corporation lifecycle as well as management roots which lead to the declination of high-tech corporation and researches into the similarities and differences between high-tech corporation lifecycle and other lifecycles, including traditional corporation lifecycle, industry lifecycle, product lifecycle and ecology lifecycle; it studies functional coupling in each stage of high-tech corporation lifecycle and puts forward ways to realize internal coupling of high-tech corporation system and external environment coupling; based on fundamental concepts of dissipative structure, it summarizes six inherent laws of system evolution and on the basis of those laws it advances six principles of high-tech corporation lifecycle management, it poses four sequential parameters of high-tech corporation system, analyses coordination and competition between them and then it advanced four principles of high-tech corporation management; it researches into various cycles in high-tech corporation and puts forward five measures of high-tech corporation management from the point of hypercycle theory; it studies the relations between carious innovation of high-tech corporation innovation system and sets up models of innovation motive forces and resistances, after that it analyses the alternation laws of innovation motive forces and resistances in each stage of high-tech corporation lifecycle, puts forward some measures to strengthen motive forces and lessen resistances and then from the angle of dissipative structure theory, it researches into relevant questions of high-tech corporation innovation management; it studies the location, identification, cultivation, cultivation and protection of high-tech corporation core competence and researches into the key elements of core competence management in each stage of lifecycle and then from the angle of synergetic, it discusses several questions of high-tech corporation core competence management; it studies seven common characteristics of successful high-tech corporation culture and puts forward the ways and measures to cultivate and innovate high-tech corporation culture after that it researches into the characteristics of corporation culture in each stage of lifecycle and discusses relevant questions of high-tech corporation culture management from the point of hypercycle theory; it studies interplay of high-tech corporation system and environment and researches into the development and management of high-tech corporation ecology system after that it analyses the construction and disintegration of high-tech corporation strategic alliance.

剖析了高新技术企业系统的要素、结构、环境与功能，比较了高新技术企业系统与一般企业系统的异同；剖析了高新技术企业在生命周期各阶段的特点及衰退的管理根源，探讨了高新技术企业生命周期与一般企业生命周期、产业生命周期，产品生命周期和生物生命周期的异同；研究了高新技术企业生命周期各阶段的功能耦合，提出了实现高新技术企业系统内部耦合及系统与外部环境耦合的途径；以耗散结构理论的基本概念为基础，总结归纳出系统演化的六大内在规律，据此提出了高新技术企业生命周期管理的六个原则；提出了高新技术企业系统的四个序参量，剖析了生命周期各阶段序参量的协同与竞争，进而提出了高新技术企业管理的四大原则；研究了高新技术企业中的各种循环，从超循环理论的角度提出了高新技术企业管理的五大措施；研究了高新技术企业创新系统中各种创新的关系，建立了创新动力和创新阻力模型，剖析了生命周期各阶段创新动力与阻力的变化规律，提出了增强创新动力与减小创新阻力的措施，从耗散结构理论的角度研究了高新技术企业创新管理的相关问题；研究了高新技术企业核心竞争力的定位、识别、培养及保护，剖析了生命周期各阶段核心竞争力管理的要点，从协同理论的角度研究了高新技术企业的核心竞争力管理的几个问题；剖析了成功的高新技术企业文化的七个共同特点，提出了培养和创新高新技术企业文化的途径及措施，研究了生命周期各阶段企业文化的特征，从超循环理论的角度探讨了高新技术企业文化管理的相关问题；研究了高新技术企业系统与环境的交互作用，探讨了高新技术企业生态系统的开拓与管理，剖析了高新技术企业战略联盟的组建与解体。

The boundary of analytical model and statistical model is clearly divided in this performance model, and evaluation accuracy is improved. Secondly, based on embedded SRAM performance hybrid model, this article adopts bionics algorithm-ant algorithm to optimize hierarchical embedded SRAM structure. This method which adjusts memory system structure improves memory system performance. Finally, considering the factors such as memory cell area, power, delay and reliability, this article establishes static 6-T memory cell area, power, delay and static noise margin equations, analyzes 6-T memory cell device dimension constraints under "read upset" and "write upset", then proposes a method to enhance embedded SRAM performance by optimizing 6-T memory cell size. In order to realize embedded SRAM design and verify proposed optimization methods, this article takes the Garfield202 system chip as the platform, which embeds A720T processor and 20KB Scratch-Pad memory.

首先针对嵌入式SRAM结构，采用多元线性回归方法分析SRAM宏单元性能指标，采用解析方法分析控制电路延时，结合以上这两种方法建立嵌入式SRAM性能混合模型，该模型清晰划分两种建模方法的各自适用范围，提高了模型精度；其次以该混合模型为基础建立存储体性能目标函数，采用仿生优化算法—蚂蚁算法优化嵌入式SRAM结构，使之达到最优设计；最后综合考虑面积、功耗、速度以及可靠性等因素，建立静态6-T存储单元面积、功耗、延时以及静态噪声容限方程，分析了&读破坏&和&写破坏&的晶体管尺寸约束，优化了6-T存储单元尺寸，提高了嵌入式SRAM性能。

Through the discussion of the study history of memory, the research problems and the significance of this study were brought forward, the concept of memory was clarified, the latest research of brain science was reviewed; On this basis, memory types and its measurement, memory process and its rules were studied documentarily and generalized systematically; This research analysed emphatically and concluded general and special methods of memory, the functions, usage means and applied scopes of many kinds of scientific memory methods were explored deeply with some typical psychology experimental results; Then affects of objective factors included external environment and material characteristics, subjective factors such as purpose, attention, emotion, knowledge, confidence and so on , were examined deeply; At last, it studied and analysed the cultivation and training of memory, practical usage of scientific memory methods, and put forward educational suggestions and training measures.

首先从记忆的研究历史切入本研究的问题背景与研究意义，阐明了记忆的概念、综述了记忆脑科学方面的最新进展；在此基础上，对记忆的分类与测量、基本过程与规律进行了文献研究与系统概括；着重分析并归结出了记忆的一般方法与特殊方法，结合代表性的心理学实验成果深入分析了各种科学记忆方法的功用、具体操作方法及应用范围；深入剖析了外部情境、材料特征等客观因素及目的、注意、情绪、知识、信心等主观因素对记忆的影响；最后在先前诸研究的基础上，对记忆的培养与训练及记忆术的实际应用加以分析和研究，提出了记忆培养训练的具体措施与教育建议，并实例说明了记忆术的具体应用。

与high memory area相关的网络解释 [注：此内容来源于网络，仅供参考]

high memory area：高端内存区

这块超出1M范围的内存单元,被定义为HMA(高端内存区 (high memory area) 的缩写. 它是 1mb 以上的扩展内存的第一个 64kb. ),地址上有物理可寻址.

high memory area：高位地址内存区

High Level Data Link Control 高级数据连接控制 | High Memory Area 高位地址内存区 | histogram 直方图;柱状图;频率图

high memory area：高记忆区

高区内存 high memory | 高记忆区 high memory area | 高抗扰性 high noise immunity

high memory area：abbr. hma; 高端内存区

High Memory Area HIMEM：高端存储区

高端 High End | 高端存储区 High Memory Area HIMEM | 高级数据链路控制(规程) High Level Data Link Control (Procedure) HDLC