gate voltage

gate voltage的基本解释

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触发电压, 栅压

与gate voltage相关的网络例句 [注：此内容来源于网络，仅供参考]

NBTI effects can also be influenced by ratio of signal and vacancy. The dynamic characteristics in NBTI degradation was revealed under action of negative and positive gate voltage, degradation can be recovered by positive gate voltage stress.

在负-正-负栅压交替作用下PMOSFET器件中会呈现退化-钝化-退化的动态作用过程，正栅压作用下的PMOSFET器件特性退化会有一定程度的恢复，这是由于在正栅压作用下NBTI反应产物逆向向Si／SiO〓界面处运动从而发生钝化作用造成的。

Because energy distribution of interface trap is very important to study degradation of gate oxide we proposed two methods-- sub-threshold swing shift method and sub-threshold gate voltage shift method based on the relaxation spectral technique.

由于界面陷阱的能量分布在超薄栅氧化层退化研究中非常重要，因此基于弛豫谱技术我们提出了两种新的方法（亚阈摆幅漂移方法和亚阈栅电压漂移方法）来提取界面陷阱的密度及能量分布。

And under constant current stress, the percentage of generated traps to N〓 is related to the increment of gate voltage to ΔV〓, that is:〓 Based on the expression:〓, the Weibull distributions of 2 different gate oxide areas are analyzed, and it is concluded that the bird beak effect caused by LOCOS process does not influence the measurement results.

而在一定的电流密度下，一段时间内电压的增量与ΔV〓的比例反映了该应力过程中产生的陷阱占整个N〓的比例：〓我们根据关系式：〓，对两种面积MOS电容的威布尔分布进行分析，得出LOCOS工艺中场氧边缘的鸟嘴效应对于测试结果的影响是可以忽略的结论。

与gate voltage相关的网络解释 [注：此内容来源于网络，仅供参考]

reverse grid current：反向栅极电流

reverse gate voltage 逆门极电压 | reverse grid current 反向栅极电流 | reverse image 倒像

heightening dam or gate：加坝加闸

低水头闸坝:low-head gate dam | 栅漏击穿电压:Gate-Drain breakdown voltage | 加坝加闸:heightening dam or gate

gate pin：浇口棒

gate pier ==> 门墩 | gate pin ==> 浇口棒 | gate pinch-off voltage ==> 栅夹断电压