gate post

gate post的基本解释

n.

门柱

与gate post相关的网络例句 [注：此内容来源于网络，仅供参考]

Young grass, the succulent dandelion, the coltsfoot on the heavy, thick clods, the troddenchickweed despised at the foot of the gate-post, so common and small, and yet so dear to me.

草地上的一花一草全是我的宠儿，我都喜爱它们；这大约是我从未养过一个"宠物"，从未栽过一种花，从未养过一只笼鸟或任何生物的缘故。

Between you and me或 between you ,me ,and the gate-post.

你知我知，莫对人讲。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

与gate post相关的网络解释 [注：此内容来源于网络，仅供参考]

gate position：停机位

gate position 飞机载客 | gate position 停机位 | gate post 门柱

Post, Rear Gate Guard：加一哨

116 西门哨 Post, West Gate Guard | 117 加一哨 Post, Rear Gate Guard | 151 南区游泳池 South Swimming Pool

Rear Gate Guard Post","Post, Rear Gate Guard：加一哨

116,"西门哨","West Gate Guard Post","Post, West Gate Gua... | 117,"加一哨","Rear Gate Guard Post","Post, Rear Gate Guard" | 118,"黄埔宾馆哨所","Whampoa Guest House Guard Post","Post, Whampoa Reception ...