film gate
- film gate的基本解释
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The degradation and breakdown of thin gate oxide film are related with the generation of traps in oxide layer.
摘 要：薄栅氧化层的退化、击穿与氧化层中和界面陷阱的产生相关。
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It is thus possible to prevent a thinning phenomenon in which a gate oxide film is made thin.
因此可以防止使栅极氧化膜变薄的减薄现象。
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The first polysilicon film is formed on the semiconductor substrate with the gate insulation film between them.
一种含有非易失性半导体存储装置的半导体装置的制造方法，提高其可靠性及成品率。
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A gate metal film is adjacent to a portion of transparent conductive film in the pixel area.
栅金属膜与在像素区中的一部分透明导电膜相邻。
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As a result, a breakdown voltage of an oxide film, which occurs in the gate oxide film, can be prevented.
结果，可以防止发生在栅极氧化膜中的氧化膜的击穿电压。
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film gate：薄膜浇口
(9) 薄膜浇口 薄膜浇口(film gate)如图 6-19,又称为毛边浇口(flash gate) ,薄膜浇口与环 状浇口类似,但使用于边缘平直的塑件,它具有平直的浇口,浇口宽度可以跨接整 个模穴边缘或是部份的模穴.薄膜浇口适用于压克力塑件,
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film gate：膜浇口
薄膜浇口(film gate)如图6-19,又称为毛边浇口(flash gate),薄膜浇口与环状浇口类似,但使用于边缘平直的塑件,它具有平直的浇口,浇口宽度可以跨接整个模穴边缘或是部份的模穴.
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film gate：薄膜形浇口
filling core 椿入蕊 | film gate 薄膜形浇口 | finger pin 指形梢
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film gate：胶片规格
-Targeted目标 | -Film gate胶片规格 | -Focal length焦距
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p film gate：薄膜浇口
p tab gate搭接浇口 | p film gate薄膜浇口 | p flash gate闸门浇口
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