erasing

erasing的基本解释

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[变形] erase的现在分词

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擦除, 清除, 取消

与erasing相关的网络例句 [注：此内容来源于网络，仅供参考]

On CHE programming, the higher coupling ratio of control-gate makes the higher electrical field across TOX in Si than Ge. Also because of the continuity of displacement vector, the higher permittivity of Ge would cause the lower electrical field at interface. We get the higher gate current in Si than Ge. On CFN programming, the higher CT in Ge would show the higher electrical field across TOX. However, the parameters of F-N tunneling are calculated and showing the gate current in Si is larger than Ge. On the same mechanism of F-N tunneling erasing, the parameters also show the higher electrical filed of Si would cause the higher erasing speed. The continuity of displacement vector also explains the higher electrical field at interface for F-N tunneling programming/erasing.

从通道热电子穿隧写入的模拟结果发现，由於控制闸极耦合电容的影响，加上电位移向量在半导体-氧化层界面连续的观念，拥有较高介电常数的锗反而得到较小的等效电场，决定了穿隧电流反倒是不如矽基板；在F-N穿隧写入的模拟中，即便锗基板拥有较大的总耦合电容，使得在浮闸的耦合电压大於矽基板，但仍旧是半导体-氧化层界面的电场扮演了穿隧电流的决定性因素，得到的结果仍旧是矽基板的写入速度高於锗基板；在F-N抹除的模拟中，运用与F-N写入相同的数学模型，仍旧看见在锗基板上未能得到速度上的改善，同时用数学的计算展示了合理的解释。

Further, the degradation due to single-electron locally trapping/de-trapping in horn-shaped SuperFlash does not occur in the triple-gate flash cell. This is because of planar poly-to-poly erasing in the triple-gate flash cell instead of tip erasing in the horn-shaped SuperFlash cell.

但是，在这篇论文中，我们发现经过长期循环擦写后，三栅 SuperFlash闪存在电子被擦除后的阈值电压的增加不是因为编程时而导致的浮栅氧化物的退化，而是由于擦除时所造成的隧穿氧化物的退化。

In Realm of Secrets or the earlier paintings, we can find he used the end of the pen to scrape oil pigments on the canvas to produce imprints. In this way, both the action of erasing and leaving traces are concretely displayed simultaneously. The Greek grapho which means "writing" in Modern English derives from the trace on the beach left by a crab's crawl.

我们也可以於《秘境》或其画者早先其他画作中看到偶画笔尾端刮除油料呈现笔痕的繁复动作，此动作具体同时展现刮除和留下痕迹（书写，最初的动作；希腊文「书写」grapho，源自螃蟹於沙滩爬行的痕迹）。

与erasing相关的网络解释 [注：此内容来源于网络，仅供参考]

erasing：擦除

[技术摘要]一种供应电压侦测电路,使用于当非挥发性存储器装置在供应电压低于一侦测点时,可避免其擦除(Erasing)及程序化(Programming). 一低电压侦测装置耦接到低电压供应来源,并且具有一电路,可在当供应电压输入的供应电压值低于一预定低电压临界值时,

erasing：擦除,清洗

Eraser 抹去,消除 | Erasing 擦除,清洗 | Erasure 抹音

erasing：清除

erase pulse 清冼脉冲 | erasing 清除 | erasing head 清洗磁头

erasing：取消

erasable programmed read only memory 可擦可编程序只读存储器 | erasing 取消 | erasing head 消磁头

erasing head：抹音磁头

playback head 放音磁头 | erasing head 抹音磁头 | turntable 唱机转盘