donor impurity
- donor impurity的基本解释
-
-
(半导体)施主杂质
- 更多网络例句与donor impurity相关的网络例句 [注：此内容来源于网络，仅供参考]
-
When a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped".
当半导体中加入了施主感受主杂质，我们就说该物质"掺杂"了。
-
The donor impurity and grain boundary combustion-supporting agent containing acceptor impurity were added successively in the ceramic powder during ceramic powder preparation, both of them can also promote grain growing and semiconductive, and the combustion-supporting agent can be good to form insulation layer in oxidizing process.
采用一次性烧成技术研制了晶界层半导体陶瓷电容器，在瓷料配制过程中先后加入施主杂质和含有受主杂质的晶界助烧剂，两者在还原烧成时促使晶粒生长并半导化，助烧剂在氧化时有利于晶界绝缘层形成。
-
Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.
选择同质或者异质的基质材料；在基质材料上外延生长形成变换叠加的垒层和阱层，在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质，得选择超晶格位置掺杂的p型III族氮化物材料，其中，每个生长周期的步骤为：生长带隙较宽的垒层，同时掺入受主杂质；生长施主杂质或受主杂质δ掺杂层；生长非掺的带隙较窄的阱层；生长受主杂质或施主杂质δ掺杂层；在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火，即得目标产物。
- 更多网络解释与donor impurity相关的网络解释 [注：此内容来源于网络，仅供参考]
-
donor impurity：施主杂质
donor dopant 施主杂质 | donor impurity 施主杂质 | donor level 施主级,施主能级
-
donor impurity：施钟质
donor dopant 施钟质 | donor impurity 施钟质 | donor level 施周级
-
donor impurity：施素不纯物
donor annihilation 消除氧气施体 | Donor impurity 施素不纯物 | donor killer 氧气施体杀手