conventioanl memory

conventioanl memory的基本解释

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[计] 常规内存

与conventioanl memory相关的网络例句 [注：此内容来源于网络，仅供参考]

Through the discussion of the study history of memory, the research problems and the significance of this study were brought forward, the concept of memory was clarified, the latest research of brain science was reviewed; On this basis, memory types and its measurement, memory process and its rules were studied documentarily and generalized systematically; This research analysed emphatically and concluded general and special methods of memory, the functions, usage means and applied scopes of many kinds of scientific memory methods were explored deeply with some typical psychology experimental results; Then affects of objective factors included external environment and material characteristics, subjective factors such as purpose, attention, emotion, knowledge, confidence and so on , were examined deeply; At last, it studied and analysed the cultivation and training of memory, practical usage of scientific memory methods, and put forward educational suggestions and training measures.

首先从记忆的研究历史切入本研究的问题背景与研究意义，阐明了记忆的概念、综述了记忆脑科学方面的最新进展；在此基础上，对记忆的分类与测量、基本过程与规律进行了文献研究与系统概括；着重分析并归结出了记忆的一般方法与特殊方法，结合代表性的心理学实验成果深入分析了各种科学记忆方法的功用、具体操作方法及应用范围；深入剖析了外部情境、材料特征等客观因素及目的、注意、情绪、知识、信心等主观因素对记忆的影响；最后在先前诸研究的基础上，对记忆的培养与训练及记忆术的实际应用加以分析和研究，提出了记忆培养训练的具体措施与教育建议，并实例说明了记忆术的具体应用。

The boundary of analytical model and statistical model is clearly divided in this performance model, and evaluation accuracy is improved. Secondly, based on embedded SRAM performance hybrid model, this article adopts bionics algorithm-ant algorithm to optimize hierarchical embedded SRAM structure. This method which adjusts memory system structure improves memory system performance. Finally, considering the factors such as memory cell area, power, delay and reliability, this article establishes static 6-T memory cell area, power, delay and static noise margin equations, analyzes 6-T memory cell device dimension constraints under "read upset" and "write upset", then proposes a method to enhance embedded SRAM performance by optimizing 6-T memory cell size. In order to realize embedded SRAM design and verify proposed optimization methods, this article takes the Garfield202 system chip as the platform, which embeds A720T processor and 20KB Scratch-Pad memory.

首先针对嵌入式SRAM结构，采用多元线性回归方法分析SRAM宏单元性能指标，采用解析方法分析控制电路延时，结合以上这两种方法建立嵌入式SRAM性能混合模型，该模型清晰划分两种建模方法的各自适用范围，提高了模型精度；其次以该混合模型为基础建立存储体性能目标函数，采用仿生优化算法—蚂蚁算法优化嵌入式SRAM结构，使之达到最优设计；最后综合考虑面积、功耗、速度以及可靠性等因素，建立静态6-T存储单元面积、功耗、延时以及静态噪声容限方程，分析了&读破坏&和&写破坏&的晶体管尺寸约束，优化了6-T存储单元尺寸，提高了嵌入式SRAM性能。

Dual Inline Memory Module HYS72V32300GR-7.5-C2, provides a 64-bit data path, and this type of interface to the memory of flapper contacts on both sides of the data interface, this interface model is widely used in the present computer memory , the usually 84-pin, because it is bilateral, so a total of 84 × 2 = 168 line contact, so people often called the 168 line to the memory of this memory, it is known as the 168 line memory.

双列直插式存储模块HYS72V32300GR-7.5-C2，提供了64位的数据通道，而且这种类型接口内存的插板两边都有数据接口触片，这种接口模式的内存广泛应用于现在的计算机中，通常为84针，由于是双边的，所以共有84×2=168线接触，所以人们常把这种内存称为168线内存，故称为168线内存条。

与conventioanl memory相关的网络解释 [注：此内容来源于网络，仅供参考]

declarative memory：陈述性记忆

根据信息储存和读出的方式,记忆可分为: 陈述性记忆(declarative memory)和非陈述性记忆(nondeclarative memory). 记忆又是随时间而变化的神经过程,可将记忆过程分为:短期记忆(short-term memory)和长期记忆(long-term memory).

expanded memory：扩展内存

第7-4位(bit)对应A驱,第3-0位(bit)对应B驱15H 基本内存(Base Memory)大小的低字节,单位为K16H 基本内存(Base Memory)大小的高字节,单位为K17H 扩展内存(Expanded Memory)大小的低字节,单位为K18H 扩展内存(Expanded Memory)大小的高字节,单位为K

internal memory：内部记忆体

记忆体的存取的资料一般是以1个位元组(Byte)为单位记忆体的逻辑(logical)观念可以看成一栋高楼或方块来表示分类 记忆体一般可分类为主记忆体(Main Memory)和辅助记忆体(Secondary Memory)二大类主记忆体(Main Memory)为CPU运算和储存程式、资料用途之元件,是微电脑内部的储存装置,属於内部记忆体(Internal Memory).