capacitance [kə'pæsitəns]

capacitance的基本解释

n.

电容, 容量

与capacitance相关的网络例句 [注：此内容来源于网络，仅供参考]

The main problems researched in the dissertation and achievements are as follows: The dissertation explains the science background and the theoretical and actual meaning of the task. The progress and the problems of the flow imaging technique are briefly explained. The advantages of electrical capacitance tomography are discussed. The paper discusses the formation and operating principle of ECT, and builds up the definite mathematical model by detail theoretical analyse, and establishes the Finite Element Model of the system by changing the finite boundary value problem of ECT into equivalence variation problem according to variation principle. On the basis of the FEM of the system, the paper builds the finite element model of the capacitance sensitivity field distribution and programs its finite element simulation software and proves the validity of the FEM of the ECT from different aspects. With the FEM and the qualitative analyse of the effect of each structural parameter of the capacitance transducer on its capability, this paper optimizes the structural parameters of the capacitance transducer, and obviously improves its capability. The compare of the simulated result with the static experimental result shows that the error of them is less than 0.9%.

其主要研究内容包括：阐述课题研究的学术背景及其理论与实际意义，概括总结出流动层析成像技术的发展现状和存在的问题，指出电容层析成像技术的优点；讨论电容层析成像系统的组成及工作原理，进行详尽的理论分析，以变分原理为基础，将ECT的有限元边值问题转换为等价的变分问题，从而建立系统的有限元模型；在系统有限元模型的基础上，建立敏感场的数学模型，编制有限元的仿真软件，并从不同角度证明电容层析成像系统有限元模型的正确性；利用有限元模型，定性地分析电容传感器各结构参数对其性能的影响，并对传感器结构参数进行优化设计，使其性能得到明显的改善。8电极ECT系统的仿真和静态实验结果的比较表明，它们之间的相对误差小于0。

The results show that the capacitance of RuO2·nH2O films unannealed is unstable. Annealing at temperatures of 100, 150, 200, 250 and 300℃for 2 h respectively, the capacitance of RuO2·nH2O becomes stable after 60 cycles. The specific capacitance of RuO2·nH2O films annealed at 100℃reaches the maximum of 0.0838 F/cm2.Key words: electrodeposition; RuO2·nH2O films; capacitance; annealing temperature

结果表明，未经退火处理的RuO2·nH2O薄膜的电容性能不稳定，在循环伏安法测试中电容量随循环次数的增加而降低；将RuO2·nH2O薄膜分别在不同温度(100， 150， 200， 250和300℃)下进行的2 h的退火处理，经退火处理后的RuO2·nH2O薄膜的电容性能经过60次的循环后趋于稳定，其中，经过100℃退火处理的RuO2·nH2O薄膜的比电容最大，其比电容为0.083 8 F/cm2。

This paper presents conductive polymer molecular materials with insulating powder, mixed into the deployment of surge suppressors for low capacitance of paste, while the component design concept is based on the field of passive components, manufacturing process to make the basic theory to design the protective components, the main use of the existing ceramic substrate for the component body structure design, screen design in the body through the structure of the gap at the top of the printing layer of a different conductors, and then to learning to know the printing process technologies approach the low capacitance of the surge suppressor paste cover the gap in the two conductors, and by the resistance of plastic burning process technology, the temperature of sintering parts made of electrostatic protection element, and this protection through the external ESD components in bombardment tests, measurement of capacitance electrostatic discharge after bombardment, Trigger voltage and leakage current data, and the volume measured by the results of future discussion of the layout of this different style of work in the same area, different clearance, solid content and temperature than the next, for the attainment of performance components, a low capacitance ESD protection devices with low breakdown voltage requirements and to chip-based protection devices can be designed to integrate with the advanced Integrated Circuits or used independent of the electrostatic protection element in the system.

本文提出高分子导电分子材料搭配绝缘粉末，调配混合成适用於低电容突波抑制器之PASTE，而元件设计概念是以被动元件制程领域作基础理论去设计此防护元件，主体利用现有陶瓷基板为元件本体结构设计，在经由网版设计在本体结构上方印刷一层不同的间隙导体，再以习知印刷制程技术方式，将低电容突波抑制器之PASTE覆盖在两导体的间隙内，并经由电阻制程习知塑烧技术，将元件烧结适当温度制成静电防护元件；而此防护元件在经外加静电放电轰击测试后，量测静电放电轰击后的电容、Trigger voltage及漏电流相关数据，并藉由测结果讨此同的布局样式，在相同工作区面积、不同间隙、固含量与温度比下，对於元件效能是否达到静电防护元件低电容与低崩溃电压的需求，并藉此晶片型防护元件可设计整合於先进积体电或应用於独系统的静电防护元件中。

与capacitance相关的网络解释 [注：此内容来源于网络，仅供参考]

capacitance：电容

R: 电阻(Resistance)C: 电容(Capacitance)前几篇曾经详细介绍电阻与电容的特性,因此接着要探讨有关coil与transformer元件的特性. 最近几年电子电路快速IC化,所以利用coil、transformer与IC匹配(match)的情况相对减少,即使如此依旧有许多电路,

capacitance：电容量

适用于高压旁路和耦合电路中.其中的低损耗高压圆片瓷介电容器具有较低的介质损耗,特别适合在电视接收机的行扫描等电路中使用. 2.技术指标(SPECIFICATIONS) 电容量(capacitance) 18pF~33000pF 电容量允许偏差(capacitance tolerance) K(±10%),M(±2

capacitance：容量

电容量(capacitance)是用来表示电容器能储蓄电荷的能力(或容量). 各 种电容器,因导体的大小体形状体材质及板间距离与介质种类等因素的不同而有不一样的电容量,但所能储存的电荷量Q与其电位V系成正比,即

capacitance：電容值

如果电容值越大,其上的电荷可以保留的时间越久,讯息更新的频率就可以降低,比较不耗电,电容值 (capacitance)与电容的面积成正比. 在制程微缩时,电容的面积以及电容值也只好跟着变小,但电容值变小,数据更新的频率只好变高,以保存讯息.

capacitance：abbr. capac; 电容