breakdown voltage

breakdown voltage的基本解释

-

绝缘击穿电压, 破坏电压, 崩溃电压

与breakdown voltage相关的网络例句 [注：此内容来源于网络，仅供参考]

The invention relates to an ESD protector which comprises the first well and the second well inside the semi-conductor liner, while a separating area is between them; the N pour area is inside the second well, to couple the first node; the NLDD area is between the N pour areas, and annularly poured under the NLDD areas; when the voltage of first node is higher than the breakdown voltage, the current discharge path is limited by the NLDD area and annular pour; said breakdown voltage is lower than the breakdown voltage of oxide of logic gate.

本发明提供了ESD保护技术。一种ESD保护器件包括设置在半导体衬底中的第一阱区和第二阱区，并且隔离区位于中间。N 注入区被设置在第二阱区中，并且在第一节点处耦合在一起。NLDD区被设置在N 注入区之间，并且环形注入位于每个NLDD区之下。当第一节点的电压超过击穿电压时，电流放电路径由对应的NLDD区和环形注入所限定。在一个具体实施例中，所述击穿电压小于逻辑门氧化物的击穿电压。

The influence of impulse voltage waveshape on particle-initiated breakdown voltage of a GIS system in SF6 and SF6/Air mixtures is reported. The results are compared with the characteristics of air gaps. For the SF6 gaps, breakdown voltage depends on wave-front duration but almost independs on wavetail duration. For the gaps in SF6/Air mixtures, the influence of impulse waveshape also depends on SF6 contents and electrical field non-uniformity

作者研究比较了正极性冲击电压波形对SF_6、空气、SF_6/空气的 GIS 电极装置由固定导电微粒引发的击穿电压的影响，结果表明：SF_6间隙的击穿电压受冲击电压波前时间长短的影响较大，而与波长的关系不大，当采用SF_6/空气混合气体时，则这种影响随SF_6含量增大而愈明显，并与电场不均匀程度有关。

This paper presents conductive polymer molecular materials with insulating powder, mixed into the deployment of surge suppressors for low capacitance of paste, while the component design concept is based on the field of passive components, manufacturing process to make the basic theory to design the protective components, the main use of the existing ceramic substrate for the component body structure design, screen design in the body through the structure of the gap at the top of the printing layer of a different conductors, and then to learning to know the printing process technologies approach the low capacitance of the surge suppressor paste cover the gap in the two conductors, and by the resistance of plastic burning process technology, the temperature of sintering parts made of electrostatic protection element, and this protection through the external ESD components in bombardment tests, measurement of capacitance electrostatic discharge after bombardment, Trigger voltage and leakage current data, and the volume measured by the results of future discussion of the layout of this different style of work in the same area, different clearance, solid content and temperature than the next, for the attainment of performance components, a low capacitance ESD protection devices with low breakdown voltage requirements and to chip-based protection devices can be designed to integrate with the advanced Integrated Circuits or used independent of the electrostatic protection element in the system.

本文提出高分子导电分子材料搭配绝缘粉末，调配混合成适用於低电容突波抑制器之PASTE，而元件设计概念是以被动元件制程领域作基础理论去设计此防护元件，主体利用现有陶瓷基板为元件本体结构设计，在经由网版设计在本体结构上方印刷一层不同的间隙导体，再以习知印刷制程技术方式，将低电容突波抑制器之PASTE覆盖在两导体的间隙内，并经由电阻制程习知塑烧技术，将元件烧结适当温度制成静电防护元件；而此防护元件在经外加静电放电轰击测试后，量测静电放电轰击后的电容、Trigger voltage及漏电流相关数据，并藉由测结果讨此同的布局样式，在相同工作区面积、不同间隙、固含量与温度比下，对於元件效能是否达到静电防护元件低电容与低崩溃电压的需求，并藉此晶片型防护元件可设计整合於先进积体电或应用於独系统的静电防护元件中。

与breakdown voltage相关的网络解释 [注：此内容来源于网络，仅供参考]

breakdown voltage：哗电压

breakdown 故障 | breakdown voltage 哗电压 | breakover voltage 火花电压

breakdown voltage rating：额定击穿电压

"击穿电压","breakdown voltage" | "额定击穿电压","breakdown voltage rating" | "断路器","breaker"

Puncture voltage, breakdown voltage：击穿电压

介电强度 Dielectric strength | 击穿电压 Puncture voltage, breakdown voltage | 耐电压 Withstand voltage