bondings

与bondings相关的网络例句 [注：此内容来源于网络，仅供参考]

Higher substrate temperature can lead to decrease of bond angle disorder of C bonds; It can also promote the outdiffusion of the implanted C atoms and the formation of C-C bondings.

较高的基片温度可以导致C键键角无序化程度的降低；也可以促进注入的C原子向表面的扩散及C-C键的形成。

We have observed gaseous diatomic molecule on the semiconductor surface with the chemical-physics dynamic mechanism of the chemical adsorption on the dangling bond. We explored on the phenomena in how gas molecules dissolve, how the atoms move, and on how they replace the bondings during the chemical adsorption process on the surface.

本论文主要在研究气态双原子分子化学吸附於半导体表面悬键上的化学物里动力学机制，并探讨气体分子在表面化学吸附过程中的分子裂解、原子移动、取代键结等现象。

Hydrogen bondings can dissociate with the increase of the temperature.

这些氢键将会显著地影响弹性体的形态和性能。

The results show that the films are characterized by the amorphous microstructure and mainly composed of Si C bondings, C C bondings as well as a small mount of oxide impurity consorted with Si; the content of the C C bondings decreased after annealing in vacuum, meanwhile the Si C bondings content increased, annealing in vacuum is beneficial to the formation of SiC; after annealing at 800 in air, a thin dense layer of SiO2 formed on the surface, which prevented the oxygen from contacting with the film and effectively protected the inner SiC from oxidizing.

结果表明，薄膜主要以非晶为主，由Si--C键， C--C键和少量Si的氧化物杂质组成；在真空条件下经高温退火后，薄膜C--C键的含量减少，而Si--C键的含量增加，真空退火有利于SiC的形成；在800℃空气中退火后，薄膜表面生成一层致密的SiO2薄层，阻止了氧气与薄膜内部深层的接触，有效保护了内部的SiC。

The C bondings are changeable with depth.

这些C键的数量和特征是随深度而变的。②。

与bondings相关的网络解释 [注：此内容来源于网络，仅供参考]

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