band trap

band trap的基本解释

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[电] 陷波器

与band trap相关的网络例句 [注：此内容来源于网络，仅供参考]

The tunable photon broad band radio frequency phaser based on a silicon ring resonance cavity comprises a pumping signal light-generating system, a carrier wave light-restraining double-sideband generating system, a silicon ring resonance system and a measuring system; wherein, the silicon ring resonance system comprises a light coupling device and the silicon ring resonance cavity; the output of the light coupling device is connected with the input port of the silicon ring resonance cavity; wherein, the silicon ring resonance cavity is composed of a silicon annulet and a root of a straight waveguide; the air gap distance between the silicon annulet and the root of the straight waveguide is several ten nanometers or several hundred nanometers; the taking characteristic of the silicon ring resonance cavity is the characteristic of a seasonal reject trap; the transmission rate in the position of a resonance wavelength is equal to zero or is very close to zero.

本发明包括：泵浦信号光发生系统、载波抑制光双边带产生系统，硅基环形谐振腔系统，以及测量系统。所述硅基环形谐振腔系统包括一个光耦合器和一个硅基环形谐振腔，光耦合器的输出连接到硅基环形谐振腔的输入端口，其中：硅基环形谐振腔由一个硅基微环和一根直波导构成，硅基微环和一根直波导之间的空气隙间隔为几十至几百纳米，硅基环形谐振腔频谱特征是周期性的带阻滤波特性，在谐振波长处的透射率等于0或非常接近0。

The luminescence properties were investigated with PL and PLE spectra.Emission peaks were at about 450 nm.This emission was ascribed to the recombination between the sulfur vacancy-related electron trap donor having an energy level just below the conduction band and the Ag-related hole trap acceptor above the valence band.

通过发射光谱和激发光谱对产品的光学性质进行研究，发射峰位于450 nm左右，归属于硫空位相关的电子陷阱施主和银相关的空穴陷阱受主的复合；激发峰位于333 nm左右，归属于ZnS基质的带边吸收。

Through discussing further the reflective and refractive coefficients of line boundary, the features of line boundary are as follows: the attenuation of high frequency band (especially in band of line trap) of transient components generated by fault through line boundary is obvious, whereas the low frequency band (1~10kHz) components are hardly influenced. Moreover, the transient components below 100kHz should be adopted in purpose of outstanding the line boundary and weakening the transmission influence of transmission line.

通过对线路边界的透、反射系数的进一步分析发现：暂态信号的高频段穿越线路边界时将大为衰减，而低频段(1~10kHz)几乎不衰减；为弱化线路的传输影响而突出线路边界的作用，宜选用100kHz以下的信号分量。

与band trap相关的网络解释 [注：此内容来源于网络，仅供参考]

trap crop：诱虫罪

trap band 诱虫带 | trap crop 诱虫罪 | trapezoidal weir 梯形堰