英语人>词典>英汉 : angstroms的中文,翻译,解释,例句,拼写相似词汇
angstroms的中文,翻译,解释,例句,拼写相似词汇

angstroms

单词解释请参考:angstrom
拼写相近单词
angstrom
拼写相近词组、短语
angstrom unit
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The illumination used, so called soft x rays in the wavelength range of twenty to forty angstroms an angstrom is one ten billionth of a meter

其使用的照明度,即所谓的软性X射线,其波长在20到40埃之间(1米的100亿分之一为1埃)。

X-ray analysis with data to 3.2 angstroms reveals that four identical subunits create an inverted teepee, or cone, cradling the selectivity filter of the pore in its outer end.

带3.2埃资料的X射线分析显示,四个相同的亚单元形成一个倒圆锥或锥型,在外端生成细孔的选择性筛检程式。

The invention adopts the technical proposal that the nucleation and process of growth of the molecular sieve are controlled properly in the synthetic process of the ZSM-5 molecular sieve material for producing the Magadiite/ZSM-5 intergrowth material, wherein the proportion of intergrown phases is adjustable, and the synthesized Magadiite/ZSM-5 intergrowth material adopts the compositions including the following mole relation: nSiO2:Al2O3, where n is between 50 and 1000 in the formula, and the method is characterized in that the Magadiite/ZSM-5 intergrowth material has two intergrown phases and an XRD diffraction pattern thereof has the d-space maximum value at the lengths of 15.73+-0.1, 11.14+-0.1, 9.97+-0.1, 7.74+-0.1, 5.14+-0.1, 3.86+-0.05, 3.66+-0.05, 3.45+-0.05, 3.30+-0.05 and 3.14+-0.1 angstroms, thereby solving the problems properly.

本发明通过采用在ZSM-5分子筛材料合成过程中,控制好分子筛的成核和生长过程,制备出了一种Magadiite/ZSM-5共生材料,其中共生物相比例可调,合成的Magadiite/ZSM-5共生材料采用包括以下摩尔关系的组成:nSiO2∶Al2O3,式中n=50~1000,其特征在于所述Magadiite/ZSM-5共生材料具有两种共生物相,其XRD衍射图谱在15.73±0.1,11.14±0.1,9.97±0.1,7.74±0.1,5.14±0.1,3.86±0.05,3.66±0.05,3.45±0.05,3.30±0.05,3.14±0.1埃处有d-间距最大值的技术方案,较好地解决了上述问题。

Each of these wavelengths, from approximately 4000 Angstroms to 7000 Angstroms, is associated with a particular color response.

其中的每一种波长,从大约4000埃到7000埃,是与一个特定的颜色反应。

This effect is particularly important for LEDS since the emitted spectral width is several hundred angstroms.

这种效应对于发光二极管来说是特别重要的,因为发光二极管所发射的光谱带宽可达几百埃。

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angstroms:埃

否则由于应力聚集,某些点位的张力可能会给活动硅层带来致命的缺陷. 根据估计,包括多层硅、分级硅锗以及埋入的氧化层在内的总厚度必须小于1,000埃(Angstroms)或10纳米. 如果超过这个厚度,埋入的氧化物将不会带来任何好处.