acceptor doping

acceptor doping的基本解释

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受主掺杂

与acceptor doping相关的网络例句 [注：此内容来源于网络，仅供参考]

With the Eu doping level increased to more than 1mol%, the content of B-site occupancies is increased and acceptor doping is to be dominant.

当Eu含量低于1mol％时，Eu在PZT晶格中主要占A位，起施主掺杂作用；随着Eu含量的增加，其在PZT晶格中占据B位的比例逐渐增多，受主掺杂作用逐渐增强。

In contrast, the concentration of deep defects is very low in annealed undoped InP and the doping of Fe acceptor by diffusion acts as the only compensation centre to pin the Fermi level, resulting in excellent electrical performance.

相比之下，非掺退火半绝缘InP材料中深能级缺陷浓度很低，通过扩散掺入的铁受主作为唯一的补偿中心钉扎费米能级，因而表现出优异的电学性质。

On the respect of piezoelectric properties, Mn coexisted as Mn〓 and Mn〓 in PZNPZT system and suitable Mn doping as acceptor improved Q〓 and lowed tan δ greatly, meanwhile, high density assured K〓 out of decrease.

适量的锰掺杂使PZN-PZT体系的机械品质因数Q〓上升和介电损耗tan δ下降，同时瓷体较高的致密度又保证了机电耦合系数K〓不致降低。

It was shown that the improvement of electric properties in 1%Eu-PZT can be attributed to Eu donor doping, which decreases the concentration of defects such as oxygen vacancies and holes, while the degradation in fatigue and leakage current properties shown in the films with more than 1mol% Eu dopant results from the apparently dominant acceptor doping, which increases the concentration of oxygen vacancies and holes.

结果表明，1mol％Eu施主掺杂，可以减少氧空位以及空穴等缺陷浓度，因此1％Eu-PZT薄膜的极化疲劳和漏电流特性得到明显改善；高于1mol％Eu的受主掺杂作用使薄膜中氧空位以及空穴等缺陷浓度增加，导致PZT薄膜电学性能恶化。

Moreover, as Q〓 had close relation with voltage step-up ratio and working stability of piezoelectric transformer, improving Q〓 was essential, which could be realized with acceptor doping or Pb O〓, Pb O〓 addition.

另外，添加PbO〓、PbO〓这类大功率组元也可以大幅度提升Q〓。

与acceptor doping相关的网络解释 [注：此内容来源于网络，仅供参考]

acceptor doping：受體摻雜

acceptor 接受體 | acceptor doping 受體摻雜 | acceptor impurity 受體雜質

acceptor doping：受主掺杂

abundance 丰度 | acceptor doping 受主掺杂 | acceptor impurity 受主杂质